场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
EFC6612R-A-TF

EFC6612R-A-TF

MOSFET 2N-CH 6CSP

onsemi

6,664 -

-

- 6-SMD, No Lead Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate, 2.5V Drive - - - - 27nC @ 4.5V - 2.5W - - - Surface Mount 6-CSP (1.77x3.54)
EFC6611R-A-TF

EFC6611R-A-TF

MOSFET 2N-CH 12V 27A EFCP

onsemi

170,000 -

-

* 6-SMD, No Lead Bulk Active - - - - - - - - - - - - - Surface Mount 6-CSP (1.77x3.54)
HUF76113DK8T

HUF76113DK8T

MOSFET 2N-CH 30V 6A US8

Fairchild Semiconductor

42,500 -
HUF76113DK8T

数据表

UltraFET® 8-VFSOP (0.091", 2.30mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6A (Ta) 32mOhm @ 6A, 10V 3V @ 250µA 19.2nC @ 10V 605pF @ 25V 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount US8
FTD2019S-TL-E

FTD2019S-TL-E

NCH+NCH 2.5V DRIVE SERIES

onsemi

8,970 -

-

* - Bulk Active - - - - - - - - - - - - - - -
FDS9933BZ

FDS9933BZ

MOSFET 2P-CH 20V 4.9A 8SOIC

Fairchild Semiconductor

8,216 -
FDS9933BZ

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 4.9A 46mOhm @ 4.9A, 4.5V 1.5V @ 250µA 15nC @ 4.5V 985pF @ 10V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
IRFR2209A

IRFR2209A

MOSFET 200V 4.6A

Harris Corporation

2,270 -
IRFR2209A

数据表

- - Bulk Active - - - - - - - - - - - - - - -
IRFR2209AS2463

IRFR2209AS2463

MOSFET TO252

Harris Corporation

1,793 -
IRFR2209AS2463

数据表

* - Bulk Active - - - - - - - - - - - - - - -
FX205-TL-E

FX205-TL-E

MOSFET P-CH

Sanyo

25,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
UPA2450CTL-E1-A

UPA2450CTL-E1-A

MOSFET 2N-CH 20V 8.6A 6HWSON

Renesas Electronics Corporation

21,000 -
UPA2450CTL-E1-A

数据表

- 6-VFDFN Exposed Pad Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 8.6A 17.5mOhm @ 4A, 4.5V 1.5V @ 1mA 6nC @ 4V 564pF @ 10V 700mW - - - Surface Mount 6-HWSON
FX205-TL-E-ON

FX205-TL-E-ON

MOSFET P-CH

onsemi

14,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
UPA2650T1E-E2-AT

UPA2650T1E-E2-AT

MOSFET 2N-CH 20V 3.8A 6MLP

Renesas Electronics Corporation

270,000 -
UPA2650T1E-E2-AT

数据表

- 6-VDFN Exposed Pad Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 3.8A 65mOhm @ 3A, 10V 2V @ 250µA 2.9nC @ 4.5V 220pF @ 10V 1.1W - - - Surface Mount 6-MLP (3x3)
G085C03D32

G085C03D32

MOSFET N/P-CH 30V 28A 8DFN

Goford Semiconductor

4,990 -
G085C03D32

数据表

- 8-PowerVDFN Cut Tape (CT) Active MOSFET (Metal Oxide) N and P-Channel - 30V 28A (Tc), 12A (Tc) 11mOhm @ 10A, 10V, 23mOhm @ 6A, 4.5V 2V @ 250µA 18nC @ 10V, 25nC @ 10V 1085pF @ 15V, 1352pF @ 15V 13W (Tc), 30W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (3.15x3.05)
FDS6912A

FDS6912A

MOSFET 2N-CH 30V 6A 8SOP

UMW

3,000 -
FDS6912A

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 30V 6A (Ta) 28mOhm @ 6A, 10V 3V @ 250µA 8.1nC @ 5V 575pF @ 15V 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
PJX8802_R1_00001

PJX8802_R1_00001

MOSFET 2N-CH 20V 0.7A SOT563

Panjit International Inc.

2,829 -
PJX8802_R1_00001

数据表

- SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 700mA (Ta) 150mOhm @ 700mA, 4.5V 1V @ 250µA 1.6nC @ 4.5V 92pF @ 10V 300mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-563
NVMJD016N06CTWG

NVMJD016N06CTWG

MOSFET N-CH 60V LFPAK56

onsemi

3,000 -

-

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - -
FW217-NMM-TL-E

FW217-NMM-TL-E

MOSFET N-CH

onsemi

104,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
UPA2590T1H-T1-AT

UPA2590T1H-T1-AT

MOSFET N/P-CH 30V 4.5A 8VSOF

Renesas Electronics Corporation

66,000 -
UPA2590T1H-T1-AT

数据表

- 8-SMD, Flat Lead Bulk Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 4.5A 50mOhm @ 2A, 10V 2.5V @ 1mA 6.6nC @ 10V 310pF @ 10V 1.24W 150°C (TJ) - - Surface Mount 8-VSOF
FW217-NMM-TL-E-SY

FW217-NMM-TL-E-SY

MOSFET N-CH

Sanyo

40,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
FDW2507N

FDW2507N

MOSFET 2N-CH 20V 7.5A 8TSSOP

Fairchild Semiconductor

25,937 -
FDW2507N

数据表

PowerTrench® 8-TSSOP (0.173", 4.40mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 7.5A 19mOhm @ 7.5A, 4.5V 1.5V @ 250µA 28nC @ 4.5V 2152pF @ 10V 1.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
UPA2590T1H-T2-AT

UPA2590T1H-T2-AT

MOSFET N/P-CH 30V 4.5A 8VSOF

Renesas Electronics Corporation

9,000 -
UPA2590T1H-T2-AT

数据表

- 8-SMD, Flat Lead Bulk Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 4.5A 50mOhm @ 2A, 10V 2.5V @ 1mA 6.6nC @ 10V 310pF @ 10V 1.24W 150°C (TJ) - - Surface Mount 8-VSOF
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