场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装

全部重置
全部应用
结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
FD1400R12IP4DBOSA1

FD1400R12IP4DBOSA1

MOSFET

Infineon Technologies

76 -
FD1400R12IP4DBOSA1

数据表

* - Bulk Active - - - - - - - - - - - - - - -
NXH020U90MNF2PTG

NXH020U90MNF2PTG

MOSFET 2N-CH 900V 149A

onsemi

4 -
NXH020U90MNF2PTG

数据表

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 900V 149A (Tc) 14mOhm @ 100A, 15V 4.3V @ 40mA 546.4nC @ 15V 7007pF @ 450V 352W (Tj) -40°C ~ 175°C (TJ) - - Chassis Mount -
FF08MR12W1MA1B11ABPSA1

FF08MR12W1MA1B11ABPSA1

MOSFET 2N-CH 1200V AG-EASY1BM-2

Infineon Technologies

8 -
FF08MR12W1MA1B11ABPSA1

数据表

CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 150A (Tj) 9.8mOhm @ 150A, 15V 5.55V @ 90mA 450nC @ 15V 16000pF @ 600V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-EASY1BM-2
APTM50AM24SG

APTM50AM24SG

MOSFET 2N-CH 500V 150A SP6

Microchip Technology

16 -
APTM50AM24SG

数据表

- SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 500V 150A 28mOhm @ 75A, 10V 5V @ 6mA 434nC @ 10V 19600pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
BSM080D12P2C008

BSM080D12P2C008

MOSFET 2N-CH 1200V 80A MODULE

Rohm Semiconductor

25 -
BSM080D12P2C008

数据表

- Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 80A (Tc) - 4V @ 13.2mA - 800pF @ 10V 600W 175°C (TJ) - - Chassis Mount Module
APTM20AM04FG

APTM20AM04FG

MOSFET 2N-CH 200V 372A SP6

Microchip Technology

7 -
APTM20AM04FG

数据表

- SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 200V 372A 5mOhm @ 186A, 10V 5V @ 10mA 560nC @ 10V 28900pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
FF2MR12KM1HPHPSA1

FF2MR12KM1HPHPSA1

MOSFET 2N-CH 1200V AG-62MMHB

Infineon Technologies

8 -
FF2MR12KM1HPHPSA1

数据表

CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 500A (Tc) 2.13mOhm @ 500A, 15V 5.15V @ 224mA 1340nC @ 15V 39700pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-62MMHB
FF4MR20KM1HHPSA1

FF4MR20KM1HHPSA1

MOSFET 2N-CH 2000V AG-62MMHB

Infineon Technologies

11 -
FF4MR20KM1HHPSA1

数据表

C Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 2000V (2kV) 280A (Tc) 5.3mOhm @ 300A, 18V 5.15V @ 168mA 1170nC @ 18V 36100pF @ 1.2kV - -40°C ~ 175°C (TJ) - - Chassis Mount AG-62MMHB
CAB400M12XM3

CAB400M12XM3

MOSFET 2N-CH 1200V 395A

Wolfspeed, Inc.

24 -
CAB400M12XM3

数据表

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Dual) - 1200V (1.2kV) 395A (Tc) 5.3mOhm @ 400A, 15V 3.6V @ 92mA 908nC @ 15V 2450pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount -
FS05MR12A6MA1BBPSA1

FS05MR12A6MA1BBPSA1

MOSFET 1200V 200A AG-HYBRIDD

Infineon Technologies

9 -
FS05MR12A6MA1BBPSA1

数据表

HybridPACK™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) 200A - - - - - - - - Chassis Mount AG-HYBRIDD-2
BSM250D17P2E004

BSM250D17P2E004

MOSFET 2N-CH 1700V 250A MODULE

Rohm Semiconductor

14 -
BSM250D17P2E004

数据表

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1700V (1.7kV) 250A (Tc) - 4V @ 66mA - 30000pF @ 10V 1800W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount Module
CAS300M17BM2

CAS300M17BM2

MOSFET 2N-CH 1700V 325A MODULE

Wolfspeed, Inc.

1 -
CAS300M17BM2

数据表

Z-Rec® Module Box Last Time Buy Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1700V (1.7kV) 325A (Tc) 10mOhm @ 225A, 20V 2.3V @ 15mA (Typ) 1076nC @ 20V 20000pF @ 1000V 1760W -40°C ~ 150°C (TJ) - - Chassis Mount Module
EAB450M12XM3

EAB450M12XM3

MOSFET 2N-CH 1200V 450A

Wolfspeed, Inc.

3 -
EAB450M12XM3

数据表

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 450A (Tc) 3.7mOhm @ 450A, 15V 3.6V @ 132mA 1330nC @ 15V 38000pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM170AM058CD3AG

MSCSM170AM058CD3AG

MOSFET 2N-CH 1700V 353A

Microchip Technology

8 -
MSCSM170AM058CD3AG

数据表

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 353A (Tc) 7.5mOhm @ 180A, 20V 3.3V @ 15mA 1068nC @ 20V 19800pF @ 1000V 1.642kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
FS03MR12A6MA1BBPSA1

FS03MR12A6MA1BBPSA1

MOSFET 6N-CH 1200V AG-HYBRIDD

Infineon Technologies

7 -
FS03MR12A6MA1BBPSA1

数据表

HybridPACK™ Module Tray Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 400A (Tj) 3.7mOhm @ 400A, 15V 5.55V @ 240mA 1320nC @ 15V 42500pF @ 600V - -40°C ~ 150°C (TJ) - - Chassis Mount AG-HYBRIDD-2
CAB760M12HM3

CAB760M12HM3

MOSFET 2N-CH 1200V 1015A MODULE

Wolfspeed, Inc.

6 -
CAB760M12HM3

数据表

- Module Box Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 1015A (Tc) 1.73mOhm @ 760A, 15V 3.6V @ 280mA 2724nC @ 15V 79400pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount Module
DMN2991UDR4-7R

DMN2991UDR4-7R

MOSFET 2N-CH 20V 0.5A 6DFN

Diodes Incorporated

119 -
DMN2991UDR4-7R

数据表

- 6-XFDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel Logic Level Gate 20V 500mA (Ta) 990mOhm @ 100mA, 4.5V 1V @ 250µA 0.28nC @ 4.5V 14.6pF @ 16V 380mW -55°C ~ 150°C (TJ) - - Surface Mount X2-DFN1010-6 (Type UXC)
2N7002HSX

2N7002HSX

MOSFET 2N-CH 60V 0.32A 6TSSOP

Nexperia USA Inc.

326 -
2N7002HSX

数据表

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active - 2 N-Channel (Dual) - 60V 320mA (Ta) 1.6Ohm @ 500mA, 10V 2.5V @ 250µA 0.5nC @ 4.5V 34pF @ 10V 420mW -55°C ~ 150°C (TA) Automotive AEC-Q101 Surface Mount 6-TSSOP
DMC2053UVT-7

DMC2053UVT-7

MOSFET N/P-CH 20V 4.6A TSOT26

Diodes Incorporated

932 -
DMC2053UVT-7

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Complementary - 20V 4.6A (Ta), 3.2A (Ta) 35mOhm @ 5A, 4.5V, 74mOhm @ 3.5A, 4.5V 1V @ 250µA 3.6nC @ 4.5V, 5.9nC @ 4.5V 369pF @ 10V, 440pF @ 10V 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount TSOT-26
DMN3015LSD-13

DMN3015LSD-13

MOSFET 2N-CH 30V 8.4A 8SO

Diodes Incorporated

315 -
DMN3015LSD-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 8.4A (Ta) 15mOhm @ 12A, 10V 2.5V @ 250µA 25.1nC @ 10V 1415pF @ 15V 1.2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
深圳市宝利科技有限公司

搜索

深圳市宝利科技有限公司

产品

深圳市宝利科技有限公司

电话

深圳市宝利科技有限公司

用户