场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
NVMFWD010N10MCLT1G

NVMFWD010N10MCLT1G

MOSFET 2N-CH 100V 11.6A 8DFN

onsemi

9,000 -

-

- 8-PowerTDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel - 100V 11.6A (Ta), 61A (Tc) 10.4mOhm @ 17A, 10V 3V @ 97µA 26nC @ 10V 1800pF @ 50V 3.1W (Ta), 84W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 8-DFN (5x6) Dual Flag (SO8FL-Dual)
FDMS3600AS

FDMS3600AS

MOSFET 2N-CH 25V 15A/30A 8PQFN

Fairchild Semiconductor

9,385 -
FDMS3600AS

数据表

PowerTrench® 8-PowerTDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate 25V 15A, 30A 5.6mOhm @ 15A, 10V 2.7V @ 250µA 27nC @ 10V 1770pF @ 13V 2.2W, 2.5W -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
RQM2201DNS#P0

RQM2201DNS#P0

MOSFET 2N-CH 60V 2A 6HWSON

Renesas

32,000 -

-

- 6-WDFN Exposed Pad Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 2A (Ta) 225mOhm @ 1A, 4.5V 1.4V @ 1mA 2.4nC @ 4.5V 200pF @ 10V 1.5W (Ta) 150°C - - Surface Mount 6-HWSON (3x3)
FDMS3606AS

FDMS3606AS

MOSFET 2N-CH 30V 13A/27A 8PQFN

Fairchild Semiconductor

7,184 -
FDMS3606AS

数据表

PowerTrench® 8-PowerTDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate 30V 13A, 27A 8mOhm @ 13A, 10V 2.7V @ 250µA 29nC @ 10V 1695pF @ 15V 1W -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
AM4599C

AM4599C

MOSFET N/P-CH 60V 7.7A 8SO

Analog Power Inc.

4,000 -
AM4599C

数据表

- PowerPAK® SO-8 Bulk Active MOSFET (Metal Oxide) N and P-Channel - 60V 7.7A (Ta), 4.3A (Ta) 33mOhm @ 5.4A, 10V, 57mOhm @ 5.2A, 10V 1V @ 250µA 5nC @ 4.5V, 20nC @ 4.5V 1465pF @ 15V, 1817pF @ 15V 2.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
FDMS1D2N03DSD

FDMS1D2N03DSD

MOSFET

onsemi

52,964 -
FDMS1D2N03DSD

数据表

* - Bulk Active - - - - - - - - - - - - - - -
UPA2752GR-E1-A

UPA2752GR-E1-A

MOSFET 2N-CH 30V 8A 8SOP

Renesas

32,500 -
UPA2752GR-E1-A

数据表

- 8-SOIC (0.173", 4.40mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 8A (Tc) 23mOhm @ 4A, 10V 2.5V @ 1mA 10nC @ 10V 480pF @ 10V 1.7W (Ta) 150°C - - Surface Mount 8-SOP
UPA2752GR-E2-A

UPA2752GR-E2-A

MOSFET 2N-CH 30V 8A 8SOP

Renesas

2,500 -
UPA2752GR-E2-A

数据表

- 8-SOIC (0.173", 4.40mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 8A (Tc) 23mOhm @ 4A, 10V 2.5V @ 1mA 10nC @ 10V 480pF @ 10V 1.7W (Ta) 150°C - - Surface Mount 8-SOP
FDMS3604AS

FDMS3604AS

MOSFET 2N-CH 30V 13A/23A 8PQFN

Fairchild Semiconductor

2,830 -
FDMS3604AS

数据表

PowerTrench® 8-PowerTDFN Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate 30V 13A, 23A 8mOhm @ 13A, 10V 2.7V @ 250µA 29nC @ 10V 1695pF @ 15V 1W -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
HAT1126RWS-E

HAT1126RWS-E

MOSFET

Renesas Electronics Corporation

2,350 -
HAT1126RWS-E

数据表

* - Bulk Active - - - - - - - - - - - - - - -
NVMFD040N10MCLT1G

NVMFD040N10MCLT1G

MOSFET 2N-CH 100V 6.1A 8DFN

onsemi

6,000 -

-

- 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 100V 6.1A (Ta), 21A (Tc) 39mOhm @ 5A, 10V 3V @ 26µA 8.4nC @ 10V 520pF @ 50V 3.2W (Ta), 36W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
CSD86356Q5DT

CSD86356Q5DT

MOSFET 25V

Texas Instruments

7,250 -
CSD86356Q5DT

数据表

* - Bulk Active - - - - - - - - - - - - - - -
UPA1602GS-E1-A

UPA1602GS-E1-A

MOSFET 7N-CH 30V 0.43A 16SOP

Renesas

61,859 -
UPA1602GS-E1-A

数据表

- 16-SOIC (0.220", 5.59mm Width) Bulk Obsolete MOSFET (Metal Oxide) 7 N-Channel - 30V 430mA (Ta) 5.3Ohm @ 150mA, 4.5V 1V @ 150mA - 10pF 1W (Ta) -40°C ~ 85°C - - Surface Mount 16-SOP
UPA1760G-E1-A

UPA1760G-E1-A

MOSFET 2N-CH 30V 8A 8SOP

Renesas

12,500 -
UPA1760G-E1-A

数据表

- 8-SOIC (0.173", 4.40mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 8A (Ta) 26mOhm @ 4A, 10V 2.5V @ 1mA 14nC @ 10V 760pF @ 10V 2W (Ta) 150°C - - Surface Mount 8-SOP
UPA1770G-E1-A

UPA1770G-E1-A

MOSFET 2P-CH 20V 6A 8SOP

Renesas

2,500 -
UPA1770G-E1-A

数据表

- 8-SOIC (0.173", 4.40mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 6A (Ta) 37mOhm @ 3A, 4.5V 1.5V @ 1mA 11nC @ 4.5V 1300pF @ 10V 750mW (Ta) 150°C - - Surface Mount 8-SOP
UPA2793GR(0)-E1-AZ

UPA2793GR(0)-E1-AZ

MOSFET N/P-CH 40V 7A 8SOP

Renesas

62,500 -

-

- 8-SOIC (0.173", 4.40mm Width) Bulk Obsolete MOSFET (Metal Oxide) N and P-Channel - 40V 7A (Ta) 15mOhm @ 3.5A, 10V, 26mOhm @ 3.5A, 10V 2.5V @ 1mA 40nC @ 10V, 45nC @ 10V 2200pF @ 10V 2W (Ta) 150°C - - Surface Mount 8-SOP
FDMS3602S

FDMS3602S

MOSFET 2N-CH 25V 15A/26A POWER56

Fairchild Semiconductor

1,639 -
FDMS3602S

数据表

PowerTrench® 8-PowerTDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 25V 15A, 26A 5.6mOhm @ 15A, 10V 3V @ 250µA 27nC @ 10V 1680pF @ 13V 1W -55°C ~ 150°C (TJ) - - Surface Mount Power56
AM7966N

AM7966N

MOSFET 2N-CH 60V 6.8A 8DFN

Analog Power Inc.

9,000 -
AM7966N

数据表

- 8-PowerVDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel - 60V 6.8A (Ta), 19A (Tc) 37mOhm @ 4A, 10V 1V @ 250µA 8nC @ 4.5V 854pF @ 15V 2.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (5x6)
FDMD8260LET60

FDMD8260LET60

MOSFET 2N-CH 60V 15A 12POWER

Fairchild Semiconductor

3,000 -
FDMD8260LET60

数据表

PowerTrench® 12-PowerWDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 15A 5.8mOhm @ 15A, 10V 3V @ 250µA 68nC @ 10V 5245pF @ 30V 1.1W -55°C ~ 175°C (TJ) - - Surface Mount 12-Power3.3x5
FPF1C2P5BF07A

FPF1C2P5BF07A

MOSFET 5N-CH 650V 36A F1

Fairchild Semiconductor

330 -
FPF1C2P5BF07A

数据表

- F1 Module Bulk Active MOSFET (Metal Oxide) 5 N-Channel (Solar Inverter) - 650V 36A 90mOhm @ 27A, 10V 3.8V @ 250µA - - 250W -40°C ~ 150°C (TJ) - - Chassis Mount F1
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