场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
MSCSM170HM45CT3AG

MSCSM170HM45CT3AG

MOSFET 4N-CH 1700V 64A

Microchip Technology

3 -
MSCSM170HM45CT3AG

数据表

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1700V (1.7kV) 64A (Tc) 45mOhm @ 30A, 20V 3.2V @ 2.5mA 178nC @ 20V 3300pF @ 1000V 319W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM170DUM11T3AG

MSCSM170DUM11T3AG

MOSFET 2N-CH 1700V 240A SP3F

Microchip Technology

5 -

-

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1700V (1.7kV) 240A (Tc) 11.3mOhm @ 120A, 20V 3.2V @ 10mA 712nC @ 20V 13200pF @ 1000V 1140W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
BSM120D12P2C005

BSM120D12P2C005

MOSFET 2N-CH 1200V 120A MODULE

Rohm Semiconductor

7 -
BSM120D12P2C005

数据表

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 120A (Tc) - 2.7V @ 22mA - 14000pF @ 10V 780W -40°C ~ 150°C (TJ) - - - Module
MSCSM120TAM31CT3AG

MSCSM120TAM31CT3AG

MOSFET 6N-CH 1200V 89A SP3F

Microchip Technology

3 -
MSCSM120TAM31CT3AG

数据表

- Module Tube Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM120DUM08T3AG

MSCSM120DUM08T3AG

MOSFET 2N-CH 1200V 337A SP3F

Microchip Technology

3 -

-

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 337A (Tc) 7.8mOhm @ 80A, 20V 2.8V @ 4mA 928nC @ 20V 12100pF @ 1000V 1409W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM170TLM23C3AG

MSCSM170TLM23C3AG

MOSFET 4N-CH 1700V 124A SP3F

Microchip Technology

6 -
MSCSM170TLM23C3AG

数据表

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1700V (1.7kV) 124A (Tc) 22.5mOhm @ 60A, 20V 3.2V @ 5mA 356nC @ 20V 6600pF @ 1000V 602W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
MSCSM170TAM45CT3AG

MSCSM170TAM45CT3AG

MOSFET 6N-CH 1700V 64A

Microchip Technology

16 -
MSCSM170TAM45CT3AG

数据表

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (3-Phase Bridge) - 1700V (1.7kV) 64A (Tc) 45mOhm @ 30A, 20V 3.2V @ 2.5mA 178nC @ 20V 3300pF @ 1000V 319W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM170AM15CT3AG

MSCSM170AM15CT3AG

MOSFET 2N-CH 1700V 181A

Microchip Technology

16 -
MSCSM170AM15CT3AG

数据表

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 181A (Tc) 15mOhm @ 90A, 20V 3.2V @ 7.5mA 534nC @ 20V 9900pF @ 1000V 862W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM08CT3AG

MSCSM120AM08CT3AG

MOSFET 2N-CH 1200V 337A SP3F

Microchip Technology

2 -
MSCSM120AM08CT3AG

数据表

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 337A (Tc) 7.8mOhm @ 160A, 20V 2.8V @ 4mA 928nC @ 20V 12.08pF @ 1000V 1.409kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
FF2MR12W3M1HB11BPSA1

FF2MR12W3M1HB11BPSA1

MOSFET 4N-CH 1200V AG-EASY3B

Infineon Technologies

17 -
FF2MR12W3M1HB11BPSA1

数据表

EasyPACK™, CoolSiC™ Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 400A (Tj) 2.27mOhm @ 400A, 18V 5.15V @ 224mA 1600nC @ 18V 48400pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY3B
MSCSM70DUM025AG

MSCSM70DUM025AG

MOSFET 2N-CH 700V 689A

Microchip Technology

5 -

-

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 700V 689A (Tc) 3.2mOhm @ 240A, 20V 2.4V @ 24mA 1290nC @ 20V 27000pF @ 700V 1882W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
BSM180D12P2E002

BSM180D12P2E002

MOSFET 2N-CH 1200V 204A MODULE

Rohm Semiconductor

8 -
BSM180D12P2E002

数据表

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 204A (Tc) - 4V @ 35.2mA - 18000pF @ 10V 1360W (Tc) -40°C ~ 150°C (TJ) - - Chassis Mount Module
MSCSM120DUM042AG

MSCSM120DUM042AG

MOSFET 2N-CH 1200V 495A

Microchip Technology

2 -

-

- Module Bulk Active Silicon Carbide (SiC) 2 N-Channel (Dual) Common Source - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 6mA 1392nC @ 20V 18100pF @ 1000V 2031W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM170TAM23CTPAG

MSCSM170TAM23CTPAG

MOSFET 6N-CH 1700V 122A

Microchip Technology

3 -
MSCSM170TAM23CTPAG

数据表

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1700V (1.7kV) 122A (Tc) 22.5mOhm @ 60A, 20V 3.2V @ 5mA 356nC @ 20V 6600pF @ 1000V 588W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM120AM042CT6LIAG

MSCSM120AM042CT6LIAG

MOSFET 2N-CH 1200V 495A SP6C LI

Microchip Technology

4 -
MSCSM120AM042CT6LIAG

数据表

- Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 6mA 1392nC @ 20V 18100pF @ 1kV 2.031kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C LI
MSCSM120AM042CD3AG

MSCSM120AM042CD3AG

MOSFET 2N-CH 1200V 495A D3

Microchip Technology

3 -
MSCSM120AM042CD3AG

数据表

- Module Box Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 495A (Tc) 5.2mOhm @ 240A, 20V 2.8V @ 6mA 1392nC @ 20V 18.1pF @ 1000V 2.031kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount D3
MSCSM70TLM05CAG

MSCSM70TLM05CAG

MOSFET 4N-CH 700V 464A SP6C

Microchip Technology

7 -

-

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 700V 464A (Tc) 4.8mOhm @ 160A, 20V 2.4V @ 16mA 860nC @ 20V 18000pF @ 700V 1277W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP6C
MSCSM170HM12CAG

MSCSM170HM12CAG

MOSFET 4N-CH 1700V 179A

Microchip Technology

13 -
MSCSM170HM12CAG

数据表

- Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1700V (1.7kV) 179A (Tc) 15mOhm @ 90A, 20V 3.2V @ 7.5mA 534nC @ 20V 9900pF @ 1000V 843W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM170AM058CT6AG

MSCSM170AM058CT6AG

MOSFET 2N-CH 1700V 353A

Microchip Technology

3 -
MSCSM170AM058CT6AG

数据表

- Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 353A (Tc) 7.5mOhm @ 180A, 20V 3.3V @ 15mA 1068nC @ 20V 19800pF @ 1000V 1.642kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
MSCSM170TAM15CTPAG

MSCSM170TAM15CTPAG

MOSFET 6N-CH 1700V 179A

Microchip Technology

8 -
MSCSM170TAM15CTPAG

数据表

- Module Bulk Active Silicon Carbide (SiC) 6 N-Channel (Phase Leg) - 1700V (1.7kV) 179A (Tc) 15mOhm @ 90A, 20V 3.2V @ 7.5mA 534nC @ 20V 9900pF @ 1000V 843W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
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