场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
DMN63D0LT-7

DMN63D0LT-7

MOSFET N-CH 100V SOT523

Diodes Incorporated

3,000 -

-

- - Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - -
MCH6646-TL-E

MCH6646-TL-E

NCH+NCH 1.8 DRIVE SERIES

onsemi

5,853,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
NTND31211PZTAG

NTND31211PZTAG

MOSFET P-CH

onsemi

597,651 -
NTND31211PZTAG

数据表

* - Bulk Active - - - - - - - - - - - - - - -
PMDPB95XNE,115

PMDPB95XNE,115

MOSFET 2N-CH 30V 2.4A 6HUSON

NXP USA Inc.

9,491 -
PMDPB95XNE,115

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 2.4A 120mOhm @ 2A, 4.5V 1.5V @ 250µA 2.5nC @ 4.5V 143pF @ 15V 475mW -55°C ~ 150°C (TJ) - - Surface Mount 6-HUSON (2x2)
FDY2001PZ

FDY2001PZ

MOSFET 2P-CH 20V 0.15A SOT563F

Fairchild Semiconductor

161,335 -
FDY2001PZ

数据表

PowerTrench® SOT-563, SOT-666 Bulk Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 150mA 8Ohm @ 150mA, 4.5V 1.5V @ 250µA 1.4nC @ 4.5V 100pF @ 10V 446mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-563F
6LN04CH-TL-E-ON

6LN04CH-TL-E-ON

MOSFET N-CH

onsemi

72,000 -
6LN04CH-TL-E-ON

数据表

* - Bulk Active - - - - - - - - - - - - - - -
SCH2806-TL-E

SCH2806-TL-E

NCH+SBD 1.8V DRIVE SERIES

onsemi

40,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
2SK443-6-TB-E-ON

2SK443-6-TB-E-ON

PNP/NPN EPITAXIAL PLANAR SILICON

onsemi

16,500 -

-

* - Bulk Active - - - - - - - - - - - - - - -
6LN04CH-TL-E

6LN04CH-TL-E

MOSFET N-CH

Sanyo

15,000 -
6LN04CH-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - -
2SK443-6-TB-E

2SK443-6-TB-E

PNP/NPN EPITAXIAL PLANAR SILICON

Sanyo

5,520 -
2SK443-6-TB-E

数据表

* - Bulk Active - - - - - - - - - - - - - - -
PMCXB900UEZ

PMCXB900UEZ

MOSFET N/P-CH 20V 0.6A 6DFN

NXP Semiconductors

1,679,901 -
PMCXB900UEZ

数据表

TrenchFET® 6-XFDFN Exposed Pad Bulk Active MOSFET (Metal Oxide) N and P-Channel Complementary Logic Level Gate 20V 600mA, 500mA 620mOhm @ 600mA, 4.5V 950mV @ 250µA 0.7nC @ 4.5V 21.3pF @ 10V 265mW -55°C ~ 150°C (TJ) - - Surface Mount DFN1010B-6
PMDXB1200UPEZ

PMDXB1200UPEZ

MOSFET 30V

NXP Semiconductors

1,046,148 -
PMDXB1200UPEZ

数据表

* - Bulk Active - - - - - - - - - - - - - - -
SCH2819-P-TL-H

SCH2819-P-TL-H

NCH+SBD 2.5V DRIVE SERIES

onsemi

855,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
CPH5617-TL-E

CPH5617-TL-E

MOSFET 2N-CH 30V 0.15A 5CPH

onsemi

3,417 -
CPH5617-TL-E

数据表

- 5-SMD, Gull Wing Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 150mA 3.7Ohm @ 80mA, 4V - 1.58nC @ 10V 7pF @ 10V 250mW 150°C (TJ) - - Surface Mount 5-CPH
SCH2408-TL-E

SCH2408-TL-E

MOSFET N-CH

Sanyo

200,000 -
SCH2408-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - -
6HN04SS-TL-H

6HN04SS-TL-H

MOSFET N-CH

Sanyo

136,000 -
6HN04SS-TL-H

数据表

* - Bulk Active - - - - - - - - - - - - - - -
MCH6630-TL-E-ON

MCH6630-TL-E-ON

MOSFET N-CH

onsemi

93,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
SCH2401-TL-E

SCH2401-TL-E

NCH+NCH 2.5V DRIVE SERIES

onsemi

85,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
MCH6630-TL-E

MCH6630-TL-E

MOSFET N-CH

Sanyo

30,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
SCH2408-TL-E-ON

SCH2408-TL-E-ON

MOSFET N-CH

onsemi

30,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
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