场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
MCH6634-TL-E

MCH6634-TL-E

PCH+NCH 2.5V DRIVE SERIES

onsemi

5,875 -

-

* - Bulk Active - - - - - - - - - - - - - - -
NTND3184NZTAG

NTND3184NZTAG

MOSFET 2N-CH 20V 0.22A 6XLLGA

onsemi

2,616 -

-

- 6-XFLGA Tape & Reel (TR) Active - 2 N-Channel (Dual) - 20V 220mA (Ta) 1.5Ohm @ 100mA, 4.5V 1V @ 250µA - 12.3pF @ 15V - -55°C ~ 150°C (TJ) - - Surface Mount 6-XLLGA (.90x.65)
NTZD3152PT1H

NTZD3152PT1H

MOSFET 2P-CH 20V 0.43A SOT563

onsemi

8,827 -
NTZD3152PT1H

数据表

- SOT-563, SOT-666 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 430mA 900mOhm @ 430mA, 4.5V 1V @ 250µA 2.5nC @ 4.5V 175pF @ 16V 250mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-563
RMD0A8P20ES9

RMD0A8P20ES9

MOSFET 2P-CH 20V 0.8A SOT363-6L

Rectron USA

18,000 -
RMD0A8P20ES9

数据表

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 800mA (Ta) 1.2Ohm @ 500mA, 4.5V 1V @ 250µA 0.0018C @ 4.5V 87pF @ 10V 800mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-363-6L
SCH2819-TL-H

SCH2819-TL-H

NCH+SBD 2.5V DRIVE SERIES

onsemi

255,000 -
SCH2819-TL-H

数据表

* - Bulk Active - - - - - - - - - - - - - - -
NTZD3158PT1G

NTZD3158PT1G

MOSFET 2P-CH 20V 0.43A SOT563

onsemi

2,287 -

-

- SOT-563, SOT-666 Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 430mA 900mOhm @ 430mA, 4.5V 1V @ 250µA 2.5nC @ 4.5V 175pF @ 16V 250mW - - - Surface Mount SOT-563
SCH2830-S-TL-E

SCH2830-S-TL-E

PCH+SBD 1.8V DRIVE SERIES

onsemi

139,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
CPH6619-TL-E

CPH6619-TL-E

PCH+NCH 2.5V DRIVE SERIES

onsemi

12,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
MCH6631-TL-E-SY

MCH6631-TL-E-SY

MOSFET N/P-CH

Sanyo

93,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
MCH6644-C-TL-E

MCH6644-C-TL-E

PCH+NCH 4V DRIVE SERIES

onsemi

48,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
SCH2817-TL-E

SCH2817-TL-E

NCH+SBD 1.8V DRIVE SERIES

onsemi

40,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
MCH6631-TL-E

MCH6631-TL-E

MOSFET N/P-CH

onsemi

6,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
SCH2817-TL-H

SCH2817-TL-H

NCH+SBD 1.8V DRIVE SERIES

onsemi

680,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
PMDPB95XNE2X

PMDPB95XNE2X

MOSFET 2N-CH 30V 2.7A 6HUSON

NXP Semiconductors

360,000 -
PMDPB95XNE2X

数据表

- 6-UDFN Exposed Pad Bulk Active MOSFET (Metal Oxide) 2 N-Channel - 30V 2.7A (Ta) 99mOhm @ 2.8A, 4.5V 1.25V @ 250µA 4.5nC @ 4.5V 258pF @ 15V 510mW (Ta), 8.33W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 6-HUSON (2x2)
FDY4001CZ

FDY4001CZ

MOSFET N/P-CH 20V 0.2A SOT563F

Fairchild Semiconductor

102,634 -
FDY4001CZ

数据表

PowerTrench® SOT-563, SOT-666 Bulk Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 200mA, 150mA 5Ohm @ 200mA, 4.5V 1.5V @ 250µA 1.1nC @ 4.5V 60pF @ 10V 446mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-563F
MCH6626-TL-E

MCH6626-TL-E

MOSFET N/P-CH 20V 1.6A/1A 6MCPH

onsemi

48,750 -

-

- 6-SMD, Flat Leads Bulk Obsolete MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 1.6A, 1A 230mOhm @ 800mA, 4V - 1.4nC @ 4V 105pF @ 10V 800mW 150°C (TJ) - - Surface Mount 6-MCPH
MCH6626-TL-H

MCH6626-TL-H

PCH+NCH 2.5V DRIVE SERIES

onsemi

39,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
FW261-TL-E

FW261-TL-E

NCH+NCH 4V DRIVE SERIES

onsemi

23,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
6LP04CH-TL-E

6LP04CH-TL-E

MOSFET P-CH

onsemi

18,000 -
6LP04CH-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - -
EFC3C001NUZTCG

EFC3C001NUZTCG

MOSFET 2N-CH 4WLCSP

onsemi

6,955 -
EFC3C001NUZTCG

数据表

- 4-XFBGA, WLCSP Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain Logic Level Gate, 2.5V Drive - - - 1.3V @ 1mA 15nC @ 4.5V - 1.6W 150°C (TJ) - - Surface Mount 4-WLCSP (1.26x1.26)
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