场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
IXKR47N60C5

IXKR47N60C5

MOSFET N-CH 600V 47A ISOPLUS247

Littelfuse Inc.

107 -
IXKR47N60C5

数据表

CoolMOS™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 47A (Tc) 10V 45mOhm @ 44A, 10V 3.5V @ 3mA 190 nC @ 10 V ±20V 6800 pF @ 100 V - - -55°C ~ 150°C (TJ) - - Through Hole ISOPLUS247™
SCT3060ALHRC11

SCT3060ALHRC11

SICFET N-CH 650V 39A TO247N

Rohm Semiconductor

440 -
SCT3060ALHRC11

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 650 V 39A (Tc) 18V 78mOhm @ 13A, 18V 5.6V @ 6.67mA 58 nC @ 18 V +22V, -4V 852 pF @ 500 V - 165W 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
IXFB132N50P3

IXFB132N50P3

MOSFET N-CH 500V 132A PLUS264

Littelfuse Inc.

275 -
IXFB132N50P3

数据表

HiPerFET™, Polar3™ TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 500 V 132A (Tc) 10V 39mOhm @ 66A, 10V 5V @ 8mA 250 nC @ 10 V ±30V 18600 pF @ 25 V - 1890W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS264™
IXTN200N10T

IXTN200N10T

MOSFET N-CH 100V 200A SOT227B

Littelfuse Inc.

270 -
IXTN200N10T

数据表

Trench SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Tc) 10V 5.5mOhm @ 50A, 10V 4.5V @ 250µA 152 nC @ 10 V ±20V 9400 pF @ 25 V - 550W (Tc) -55°C ~ 175°C (TJ) - - Chassis Mount SOT-227B
STY60NM50

STY60NM50

MOSFET N-CH 500V 60A MAX247

STMicroelectronics

584 -
STY60NM50

数据表

MDmesh™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 60A (Tc) 10V 50mOhm @ 30A, 10V 5V @ 250µA 266 nC @ 10 V ±30V 7500 pF @ 25 V - 560W (Tc) 150°C (TJ) - - Through Hole MAX247™
IXFK32N80Q3

IXFK32N80Q3

MOSFET N-CH 800V 32A TO264AA

IXYS

442 -
IXFK32N80Q3

数据表

HiPerFET™, Q3 Class TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 800 V 32A (Tc) 10V 270mOhm @ 16A, 10V 6.5V @ 4mA 140 nC @ 10 V ±30V 6940 pF @ 25 V - 1000W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264AA (IXFK)
MSC040SMA120S/TR

MSC040SMA120S/TR

MOSFET SIC 1200 V 40 MOHM TO-268

Microchip Technology

397 -
MSC040SMA120S/TR

数据表

- TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 64A (Tc) 20V 50mOhm @ 40A, 20V 2.6V @ 2mA 137 nC @ 20 V +23V, -10V 1990 pF @ 1000 V - 303W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-268
IXTN32P60P

IXTN32P60P

MOSFET P-CH 600V 32A SOT227B

Littelfuse Inc.

296 -
IXTN32P60P

数据表

PolarP™ SOT-227-4, miniBLOC Tube Active P-Channel MOSFET (Metal Oxide) 600 V 32A (Tc) 10V 350mOhm @ 500mA, 10V 4V @ 1mA 196 nC @ 10 V ±20V 11100 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
SCT2080KEHRC11

SCT2080KEHRC11

SICFET N-CH 1200V 40A TO247N

Rohm Semiconductor

16,500 -
SCT2080KEHRC11

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 40A (Tc) 18V 117mOhm @ 10A, 18V 4V @ 4.4mA 106 nC @ 18 V +22V, -6V 2080 pF @ 800 V - - 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247N
NVBG025N065SC1

NVBG025N065SC1

SIC MOS D2PAK-7L 650V

onsemi

790 -
NVBG025N065SC1

数据表

- TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 650 V 106A (Tc) 15V, 18V 28.5mOhm @ 45A, 18V 4.3V @ 15.5mA 164 nC @ 18 V - 3480 pF @ 325 V - 395W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount D2PAK-7
AIMW120R060M1HXKSA1

AIMW120R060M1HXKSA1

1200V COOLSIC MOSFET PG-TO247-3

Infineon Technologies

220 -
AIMW120R060M1HXKSA1

数据表

CoolSiC™ TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 36A (Tc) 18V 78mOhm @ 13A, 18V 5.7V @ 5.6mA 31 nC @ 18 V +23V, -7V 1060 pF @ 800 V - 150W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole PG-TO247-3-41
IXFK360N15T2

IXFK360N15T2

MOSFET N-CH 150V 360A TO264AA

Littelfuse Inc.

297 -
IXFK360N15T2

数据表

HiPerFET™, TrenchT2™ TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 150 V 360A (Tc) 10V 4mOhm @ 60A, 10V 5V @ 8mA 715 nC @ 10 V ±20V 47500 pF @ 25 V - 1670W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-264AA (IXFK)
C3M0040120J1-TR

C3M0040120J1-TR

1200V 40 M SIC MOSFET

Wolfspeed, Inc.

1,382 -
C3M0040120J1-TR

数据表

C3M™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 1200 V 64A (Tc) 15V 53.5mOhm @ 33.3A, 15V 3.6V @ 9.2mA 94 nC @ 15 V +15V, -4V 2900 pF @ 1000 V - 272W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount TO-263-7
IXFN160N30T

IXFN160N30T

MOSFET N-CH 300V 130A SOT227B

Littelfuse Inc.

490 -
IXFN160N30T

数据表

HiPerFET™, Trench SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 300 V 130A (Tc) 10V 19mOhm @ 60A, 10V 5V @ 8mA 335 nC @ 10 V ±20V 28000 pF @ 25 V - 900W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
NVH4L022N120M3S

NVH4L022N120M3S

SIC MOS TO247-4L 22MOHM 1200V

onsemi

820 -
NVH4L022N120M3S

数据表

- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 68A (Tc) 18V 30mOhm @ 40A, 18V 4.4V @ 20mA 151 nC @ 18 V +22V, -10V 3175 pF @ 800 V - 352W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-4L
IXFK52N100X

IXFK52N100X

MOSFET N-CH 1000V 52A TO264

Littelfuse Inc.

265 -
IXFK52N100X

数据表

HiPerFET™, Ultra X TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 52A (Tc) 10V 125mOhm @ 26A, 10V 6V @ 4mA 245 nC @ 10 V ±30V 6725 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-264
NVHL020N090SC1

NVHL020N090SC1

SICFET N-CH 900V 118A TO247-3

onsemi

168 -
NVHL020N090SC1

数据表

- TO-247-3 Tube Active N-Channel SiCFET (Silicon Carbide) 900 V 118A (Tc) 15V 28mOhm @ 60A, 15V 4.3V @ 20mA 196 nC @ 15 V +19V, -10V 4415 pF @ 450 V - 503W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Through Hole TO-247-3
IXFB44N100P

IXFB44N100P

MOSFET N-CH 1000V 44A PLUS264

Littelfuse Inc.

300 -
IXFB44N100P

数据表

HiPerFET™, Polar TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 1000 V 44A (Tc) 10V 220mOhm @ 22A, 10V 6.5V @ 1mA 305 nC @ 10 V ±30V 19000 pF @ 25 V - 1250W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PLUS264™
IXFN210N30P3

IXFN210N30P3

MOSFET N-CH 300V 192A SOT227B

IXYS

300 -
IXFN210N30P3

数据表

HiPerFET™, Polar3™ SOT-227-4, miniBLOC Tube Active N-Channel MOSFET (Metal Oxide) 300 V 192A (Tc) 10V 14.5mOhm @ 105A, 10V 5V @ 8mA 268 nC @ 10 V ±20V 16200 pF @ 25 V - 1500W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount SOT-227B
IXKK85N60C

IXKK85N60C

MOSFET N-CH 600V 85A TO264A

IXYS

138 -
IXKK85N60C

数据表

CoolMOS™ TO-264-3, TO-264AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 85A (Tc) 10V 36mOhm @ 55A, 10V 4V @ 4mA 650 nC @ 10 V ±20V - - - -55°C ~ 150°C (TJ) - - Through Hole TO-264AA
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