场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
DMT6006LSS-13

DMT6006LSS-13

MOSFET BVDSS: 41V~60V SO-8 T&R 2

Diodes Incorporated

2,500 -
DMT6006LSS-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 11.9A (Ta) 4.5V, 10V 6.5mOhm @ 20A, 10V 2.5V @ 250µA 34.9 nC @ 10 V ±20V 2162 pF @ 30 V - 1.38W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
NVD3055-094T4G-VF01

NVD3055-094T4G-VF01

MOSFET N-CH 60V 12A DPAK

onsemi

2,289 -
NVD3055-094T4G-VF01

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 12A (Ta) 10V 94mOhm @ 6A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 450 pF @ 25 V - 1.5W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK
XP4459M

XP4459M

MOSFET P-CH 30V 11.3A 8SO

YAGEO XSEMI

1,000 -
XP4459M

数据表

XP4459 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 11.3A (Ta) 4.5V, 10V 13.5mOhm @ 10A, 10V 3V @ 250µA 64 nC @ 10 V ±20V 3360 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
TPH8R808QM,LQ

TPH8R808QM,LQ

80V UMOS9-H SOP-ADVANCE(N) 8.8MO

Toshiba Semiconductor and Storage

9,829 -

-

U-MOSX-H 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 79A (Ta), 52A (Tc) 6V, 10V 8.8mOhm @ 26A, 10V 3.5V @ 300µA 26 nC @ 10 V ±20V 1750 pF @ 40 V - 3W (Ta), 109W (Tc) 175°C - - Surface Mount 8-SOP Advance (5x5.75)
DMPH3010LK3-13

DMPH3010LK3-13

MOSFET P-CHANNEL 30V 50A TO252

Diodes Incorporated

1,039 -
DMPH3010LK3-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 7.5mOhm @ 10A, 10V 2.1V @ 250µA 139 nC @ 10 V ±20V 6807 pF @ 15 V - 3.9W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
NVMFWS040N10MCLT1G

NVMFWS040N10MCLT1G

PTNG 100V LL SO8FL

onsemi

680 -
NVMFWS040N10MCLT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 6.5A (Ta), 21A (Tc) 4.5V, 10V 38mOhm @ 5A, 10V 3V @ 26µA 8.3 nC @ 10 V ±20V 500 pF @ 50 V - 3.5W (Ta), 36W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
SQJ860EP-T1_GE3

SQJ860EP-T1_GE3

MOSFET N-CH 40V 60A PPAK SO-8

Vishay Siliconix

14,730 -
SQJ860EP-T1_GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 6mOhm @ 10A, 10V 2.5V @ 250µA 55 nC @ 10 V ±20V 2700 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
PJQ4568AP-AU_R2_002A1

PJQ4568AP-AU_R2_002A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

5,000 -
PJQ4568AP-AU_R2_002A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IAUC26N10S5L245ATMA1

IAUC26N10S5L245ATMA1

MOSFET_(75V 120V( PG-TDSON-8

Infineon Technologies

4,728 -
IAUC26N10S5L245ATMA1

数据表

OptiMOS™ 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 26A (Tj) 4.5V, 10V 24.5mOhm @ 13A, 10V 2.2V @ 13µA 12 nC @ 10 V ±20V 762 pF @ 50 V - 40W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TDSON-8-33
DMT47M2SFVWQ-13

DMT47M2SFVWQ-13

MOSFET N-CH 40V PWRDI3333

Diodes Incorporated

3,000 -
DMT47M2SFVWQ-13

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 15.4A (Ta), 49.1A (Tc) 10V 7.5mOhm @ 20A, 10V 4V @ 250µA 12.1 nC @ 10 V ±20V 897 pF @ 20 V - 2.67W (Ta), 27.1W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PowerDI3333-8 (SWP) Type UX
PJQ5530-AU_R2_002A1

PJQ5530-AU_R2_002A1

30V N-CHANNEL (LL) SGT MOSFET

Panjit International Inc.

3,000 -
PJQ5530-AU_R2_002A1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
PJQ5435E_R2_00201

PJQ5435E_R2_00201

30V P-CHANNEL STANDARD TRENCH MO

Panjit International Inc.

3,000 -
PJQ5435E_R2_00201

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
SQJA88EP-T1_GE3

SQJA88EP-T1_GE3

MOSFET N-CH 40V 30A PPAK SO-8

Vishay Siliconix

2,936 -
SQJA88EP-T1_GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 30A (Tc) 4.5V, 10V 7mOhm @ 8A, 10V 2.5V @ 250µA 35 nC @ 10 V ±20V 1800 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PowerPAK® SO-8
DMT15H067SSS-13

DMT15H067SSS-13

MOSFET N-CH 150V 4.5A/13A 8SO

Diodes Incorporated

1,885 -
DMT15H067SSS-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 4.5A (Ta), 13A (Tc) 10V 67mOhm @ 4.1A, 10V 4V @ 250µA 6.4 nC @ 10 V ±20V 425 pF @ 75 V - 1.3W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
SI4420BDY-T1-GE3

SI4420BDY-T1-GE3

MOSFET N-CH 30V 9.5A 8SO

Vishay Siliconix

1,757 -
SI4420BDY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 9.5A (Ta) 4.5V, 10V 8.5mOhm @ 13.5A, 10V 3V @ 250µA 50 nC @ 10 V ±20V - - 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FDMC7678-L701

FDMC7678-L701

PT8 N 30/20V MLP3.3X3.3

onsemi

5,128 -
FDMC7678-L701

数据表

PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 17.5A (Ta), 19.5A (Tc) 4.5V, 10V 5.3mOhm @ 17.5A, 10V 3V @ 250µA 39 nC @ 10 V ±20V 2410 pF @ 15 V - 2.3W (Ta), 31W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP (3.3x3.3)
TSM052NB03CR RLG

TSM052NB03CR RLG

MOSFET N-CH 30V 17A/90A 8PDFN

Taiwan Semiconductor Corporation

4,949 -
TSM052NB03CR RLG

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 17A (Ta), 90A (Tc) 4.5V, 10V 5.2mOhm @ 17A, 10V 2.5V @ 250µA 41 nC @ 10 V ±20V 2294 pF @ 15 V - 3.1W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PDFN (5x6)
ISK036N03LM5AUSA1

ISK036N03LM5AUSA1

TRENCH <= 40V

Infineon Technologies

2,585 -
ISK036N03LM5AUSA1

数据表

OptiMOS™ 5 6-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 16.5A (Ta), 81A (Tc) 4.5V, 10V 3.6mOhm @ 20A, 10V 2V @ 250µA 21.5 nC @ 10 V ±16V 1400 pF @ 15 V - 2.1W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-VSON-6-1
IAUCN04S7L009ATMA1

IAUCN04S7L009ATMA1

MOSFET_(20V 40V)

Infineon Technologies

828 -
IAUCN04S7L009ATMA1

数据表

OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 275A (Tj) 4.5V, 10V 0.91mOhm @ 88A, 10V 1.8V @ 60µA 85 nC @ 10 V ±16V 5704 pF @ 20 V - 129W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-34
PJQ4443P-AU_R2_000A1

PJQ4443P-AU_R2_000A1

40V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

759 -
PJQ4443P-AU_R2_000A1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 8.8A (Ta), 46A (Tc) 4.5V, 10V 12mOhm @ 10A, 10V 2.5V @ 250µA 23 nC @ 4.5 V ±20V 2767 pF @ 25 V - 2.1W (Ta), 59.5W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount DFN3333-8
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