场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
ZXMN6A08GQTA

ZXMN6A08GQTA

MOSFET N-CH 60V 3.8A SOT223

Diodes Incorporated

261 -
ZXMN6A08GQTA

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 3.8A (Ta) 4.5V, 10V 80mOhm @ 4.8A, 10V 1V @ 250µA 5.8 nC @ 10 V ±20V 459 pF @ 40 V - 2W (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-223-3
IAUCN04S7N009ATMA1

IAUCN04S7N009ATMA1

MOSFET_(20V 40V)

Infineon Technologies

236 -
IAUCN04S7N009ATMA1

数据表

OptiMOS™ 7 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 175A 10V - - - - - - - -55°C ~ 175°C Automotive AEC-Q101 Surface Mount PG-TDSON-8-34
NVMYS029N08LHTWG

NVMYS029N08LHTWG

T8 80V LL LFPAK

onsemi

3,000 -
NVMYS029N08LHTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 7A (Ta), 22A (Tc) 4.5V, 10V 29mOhm @ 5A, 10V 2V @ 20µA 9 nC @ 10 V ±20V 431 pF @ 40 V - 3.5W (Ta), 33W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK4 (5x6)
PJQ5435E-AU_R2_006A1

PJQ5435E-AU_R2_006A1

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,000 -
PJQ5435E-AU_R2_006A1

数据表

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 13.2A (Ta), 47A (Tc) 4.5V, 10V 12.1mOhm @ 20A, 10V 2.5V @ 250µA 34 nC @ 10 V ±25V 1610 pF @ 25 V - 3.3W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060-8
TPN6R003NL,LQ

TPN6R003NL,LQ

MOSFET N CH 30V 27A 8TSON-ADV

Toshiba Semiconductor and Storage

2,745 -
TPN6R003NL,LQ

数据表

U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 27A (Tc) 4.5V, 10V 6mOhm @ 13.5A, 10V 2.3V @ 200µA 17 nC @ 10 V ±20V 1400 pF @ 15 V - 700mW (Ta), 32W (Tc) 150°C (TJ) - - Surface Mount 8-TSON Advance (3.1x3.1)
NVMFWS025P04M8LT1G

NVMFWS025P04M8LT1G

MV8 40V P-CH LL IN S08FL PACKAGE

onsemi

1,419 -
NVMFWS025P04M8LT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 9.4A (Ta), 34.6A (Tc) 4.5V, 10V 23mOhm @ 15A, 10V 2.4V @ 255µA 16.3 nC @ 10 V ±20V 1058 pF @ 20 V - 3.5W (Ta), 44.1W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
CSD17381F4T

CSD17381F4T

MOSFET N-CH 30V 3.1A 3PICOSTAR

Texas Instruments

34,264 -
CSD17381F4T

数据表

FemtoFET™ 3-XFDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 3.1A (Ta) 1.8V, 4.5V 109mOhm @ 500mA, 8V 1.1V @ 250µA 1.35 nC @ 4.5 V 12V 195 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 3-PICOSTAR
AO4486

AO4486

MOSFET N-CH 100V 4.2A 8SOIC

Alpha & Omega Semiconductor Inc.

7,775 -
AO4486

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 4.2A (Ta) 4.5V, 10V 79mOhm @ 3A, 10V 2.7V @ 250µA 20 nC @ 10 V ±20V 942 pF @ 50 V - 3.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
DI040P04PT-AQ

DI040P04PT-AQ

MOSFET, POWERQFN 3X3, -40V, -40A

Diotec Semiconductor

4,985 -

-

- 8-PowerVDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 40A (Tc) 4.5V, 10V 15mOhm @ 10A, 10V 2.5V @ 250µA 59 nC @ 10 V ±20V 3538 pF @ 20 V - 22.7W (Tc) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-QFN (3x3)
NVTYS007N04CTWG

NVTYS007N04CTWG

T6 40V N-CH SL IN LFPAK33

onsemi

3,000 -
NVTYS007N04CTWG

数据表

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta), 49A (Tc) 10V 8.6mOhm @ 15A, 10V 3.5V @ 30µA 10 nC @ 10 V ±20V 674 pF @ 25 V - 3.1W (Ta), 38W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
NVTYS007N04CLTWG

NVTYS007N04CLTWG

T6 40V N-CH LL IN LFPAK33

onsemi

2,990 -
NVTYS007N04CLTWG

数据表

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 16A (Ta), 54A (Tc) 4.5V, 10V 7.3mOhm @ 10A, 10V 2.2V @ 30µA 16 nC @ 10 V ±20V 900 pF @ 25 V - 3.1W (Ta), 38W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
TK13P25D,RQ

TK13P25D,RQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage

2,026 -
TK13P25D,RQ

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 250 V 13A (Ta) 10V 250mOhm @ 6.5A, 10V 3.5V @ 1mA 25 nC @ 10 V ±20V 1100 pF @ 100 V - 96W (Tc) 150°C - - Surface Mount DPAK
DMTH10H015LK3-13

DMTH10H015LK3-13

MOSFET N-CH 100V 52.5A TO252

Diodes Incorporated

1,856 -
DMTH10H015LK3-13

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 52.5A (Ta) 6V, 10V 15mOhm @ 20A, 10V 3.5V @ 250µA 33.3 nC @ 10 V ±20V 1871 pF @ 50 V - 2.1W (Ta) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252-3
ZXMP4A16GQTA

ZXMP4A16GQTA

MOSFET P-CH 40V SOT223

Diodes Incorporated

1,422 -
ZXMP4A16GQTA

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 4.6A (Ta) 4.5V, 10V 60mOhm @ 3.8A, 10V 1V @ 250µA 26.1 nC @ 10 V ±20V 1007 pF @ 20 V - 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223-3
DMT8012LSS-13

DMT8012LSS-13

MOSFET N-CH 80V 9.7A 8SO

Diodes Incorporated

789 -
DMT8012LSS-13

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 9.7A (Ta) 4.5V, 10V 16.5mOhm @ 12A, 10V 3V @ 250µA 34 nC @ 10 V ±20V 1949 pF @ 40 V - 1.5W (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount 8-SO
SQS182ELNW-T1_GE3

SQS182ELNW-T1_GE3

AUTOMOTIVE N-CHANNEL 80 V (D-S)

Vishay Siliconix

2,736 -
SQS182ELNW-T1_GE3

数据表

TrenchFET® PowerPAK® 1212-8SLW Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 45A (Tc) 4.5V, 10V 13.2mOhm @ 10A, 10V 2.5V @ 250µA 39 nC @ 10 V ±20V 2024 pF @ 25 V - 65W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank PowerPAK® 1212-8SLW
TK40S06N1L,LQ

TK40S06N1L,LQ

MOSFET N-CH 60V 40A DPAK

Toshiba Semiconductor and Storage

2,618 -
TK40S06N1L,LQ

数据表

U-MOSVIII-H TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Ta) 4.5V, 10V 10.5mOhm @ 20A, 10V 2.5V @ 200µA 26 nC @ 10 V ±20V 1650 pF @ 10 V - 88.2W (Tc) 175°C - - Surface Mount DPAK+
IPU80R2K0P7AKMA1

IPU80R2K0P7AKMA1

MOSFET N-CH 800V 3A TO251-3

Infineon Technologies

1,190 -
IPU80R2K0P7AKMA1

数据表

CoolMOS™ P7 TO-251-3 Short Leads, IPAK, TO-251AA Tube Active N-Channel MOSFET (Metal Oxide) 800 V 3A (Tc) 10V 2Ohm @ 940mA, 10V 3.5V @ 50µA 9 nC @ 10 V ±20V 175 pF @ 500 V - 24W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
IPP044N03LF2SAKSA1

IPP044N03LF2SAKSA1

MOSFET N-CH 30V 70A TO220-3

Infineon Technologies

1,000 -
IPP044N03LF2SAKSA1

数据表

StrongIRFET™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 30 V 22A (Ta), 53A (Tc) 4.5V, 10V 4.35mOhm @ 30A, 10V 2.35V @ 30µA 41 nC @ 10 V ±20V 1800 pF @ 15 V - 3.8W (Ta), 75W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-U05
PSMN6R7-40MSDX

PSMN6R7-40MSDX

MOSFET N-CH 40V 50A LFPAK33

Nexperia USA Inc.

5,998 -
PSMN6R7-40MSDX

数据表

- SOT-1210, 8-LFPAK33 (5-Lead) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Tc) 10V 6.7mOhm @ 20A, 10V 3.6V @ 1mA 22 nC @ 10 V ±20V 1642 pF @ 20 V - 65W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK33
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