场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

全部重置
全部应用
结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
R6004RND3TL1

R6004RND3TL1

600V 4A TO-252, PRESTOMOS WITH I

Rohm Semiconductor

2,700 -
R6004RND3TL1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 15V 1.73Ohm @ 2A, 15V 7V @ 450µA 10.5 nC @ 15 V ±30V 230 pF @ 100 V - 60W (Tc) 150°C (TJ) - - Surface Mount TO-252
TK5P60W5,RVQ

TK5P60W5,RVQ

PB-F POWER MOSFET TRANSISTOR DPA

Toshiba Semiconductor and Storage

2,000 -

-

DTMOSIV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Ta) 10V 990mOhm @ 2.3A, 10V 4.5V @ 230µA 11.5 nC @ 10 V ±30V 370 pF @ 300 V - 60W (Tc) 150°C - - Surface Mount DPAK
TJ10S04M3L(T6L1,NQ

TJ10S04M3L(T6L1,NQ

MOSFET P-CH 40V 10A DPAK

Toshiba Semiconductor and Storage

1,895 -
TJ10S04M3L(T6L1,NQ

数据表

U-MOSVI TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 10A (Ta) 6V, 10V 44mOhm @ 5A, 10V 3V @ 1mA 19 nC @ 10 V +10V, -20V 930 pF @ 10 V - 27W (Tc) 175°C (TJ) - - Surface Mount DPAK+
STD3NK50ZT4

STD3NK50ZT4

MOSFET N-CH 500V 2.3A DPAK

STMicroelectronics

1,870 -
STD3NK50ZT4

数据表

SuperMESH™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 500 V 2.3A (Tc) 10V 3.3Ohm @ 1.15A, 10V 4.5V @ 50µA 15 nC @ 10 V ±30V 280 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
TK5P53D(T6RSS-Q)

TK5P53D(T6RSS-Q)

MOSFET N-CH 525V 5A DPAK

Toshiba Semiconductor and Storage

1,710 -
TK5P53D(T6RSS-Q)

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 525 V 5A (Ta) 10V 1.5Ohm @ 2.5A, 10V 4.4V @ 1mA 11 nC @ 10 V ±30V 540 pF @ 25 V - 80W (Tc) 150°C (TJ) - - Surface Mount DPAK
BUK9Y4R8-60RAX

BUK9Y4R8-60RAX

BUK9Y4R8-60RA/SOT669/LFPAK

Nexperia USA Inc.

1,500 -

-

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
NVTFS6H854NLWFTAG

NVTFS6H854NLWFTAG

MOSFET N-CH 80V 10A/41A 8WDFN

onsemi

1,454 -
NVTFS6H854NLWFTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 10A (Ta), 41A (Tc) 4.5V, 10V 13.4mOhm @ 10A, 10V 2V @ 45µA 17 nC @ 10 V ±20V 902 pF @ 40 V - 3.2W (Ta), 54W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
NVTFS6H854NLTAG

NVTFS6H854NLTAG

MOSFET N-CH 80V 10A/41A 8WDFN

onsemi

1,270 -
NVTFS6H854NLTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 10A (Ta), 41A (Tc) 4.5V, 10V 13.4mOhm @ 10A, 10V 2V @ 45µA 17 nC @ 10 V ±20V 902 pF @ 40 V - 3.2W (Ta), 54W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
DIT100N10

DIT100N10

MOSFET TO220AB N 100V 0.0099OHM

Diotec Semiconductor

997 -
DIT100N10

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 100A (Tc) 10V 13mOhm @ 40A, 10V 4V @ 250µA 85 nC @ 10 V ±20V 4800 pF @ 50 V - 200W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
PJP100N06SA-AU_T0_006A1

PJP100N06SA-AU_T0_006A1

60V N-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

990 -
PJP100N06SA-AU_T0_006A1

数据表

- - Tube Active - - - - - - - - - - - - - - - - -
TJ20S04M3L(T6L1,NQ

TJ20S04M3L(T6L1,NQ

MOSFET P-CH 40V 20A DPAK

Toshiba Semiconductor and Storage

935 -
TJ20S04M3L(T6L1,NQ

数据表

U-MOSVI TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 20A (Ta) 6V, 10V 22.2mOhm @ 10A, 10V 3V @ 1mA 37 nC @ 10 V +10V, -20V 1850 pF @ 10 V - 41W (Tc) 175°C (TJ) - - Surface Mount DPAK+
MCAC65N06YHE3-TP

MCAC65N06YHE3-TP

MOSFET N-CH 60 65A DFN5060

Micro Commercial Co

7,261 -
MCAC65N06YHE3-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 65A (Tc) 4.5V, 10V 5.2mOhm @ 20A, 10V 2.5V @ 250µA 34.5 nC @ 10 V ±20V 1740 pF @ 30 V - 100W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060
MCAC95N04YHE3-TP

MCAC95N04YHE3-TP

MOSFET N-CH 40 95A DFN5060

Micro Commercial Co

5,000 -
MCAC95N04YHE3-TP

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 95A (Tc) 6V, 10V 3.2mOhm @ 20A, 10V 4V @ 250µA 27.7 nC @ 10 V ±20V 1709 pF @ 20 V - 75W (Tj) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060
NVMYS3D5N04CTWG

NVMYS3D5N04CTWG

MOSFET N-CH 40V 24A/102A LFPAK4

onsemi

2,954 -
NVMYS3D5N04CTWG

数据表

- SOT-1023, 4-LFPAK Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 24A (Ta), 102A (Tc) 10V 3.3mOhm @ 50A, 10V 3.5V @ 60µA 23 nC @ 10 V ±20V 1600 pF @ 25 V - 3.6W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK4 (5x6)
SI4894BDY-T1-GE3

SI4894BDY-T1-GE3

MOSFET N-CH 30V 8.9A 8SO

Vishay Siliconix

2,500 -
SI4894BDY-T1-GE3

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 8.9A (Ta) 4.5V, 10V 11mOhm @ 12A, 10V 3V @ 250µA 38 nC @ 10 V ±20V 1580 pF @ 15 V - 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
NVTFS5C460NLTAG

NVTFS5C460NLTAG

MOSFET N-CH 40V 19A/74A 8WDFN

onsemi

1,210 -
NVTFS5C460NLTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Ta), 74A (Tc) 4.5V, 10V 4.8mOhm @ 35A, 10V 2V @ 40µA 11 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
SIRA54DP-T1-GE3

SIRA54DP-T1-GE3

MOSFET N-CH 40V 60A PPAK SO-8

Vishay Siliconix

5,980 -
SIRA54DP-T1-GE3

数据表

TrenchFET® Gen IV PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 2.35mOhm @ 15A, 10V 2.3V @ 250µA 48 nC @ 4.5 V +20V, -16V 5300 pF @ 20 V - 36.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
STP3NK60Z

STP3NK60Z

MOSFET N-CH 600V 2.4A TO220AB

STMicroelectronics

4,867 -
STP3NK60Z

数据表

SuperMESH™ TO-220-3 Tube Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 2.4A (Tc) 10V 3.6Ohm @ 1.2A, 10V 4.5V @ 50µA 11.8 nC @ 10 V ±30V 311 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
ISZ330N12LM6ATMA1

ISZ330N12LM6ATMA1

OPTIMOS 6 POWER-TRANSISTOR,120V

Infineon Technologies

3,719 -
ISZ330N12LM6ATMA1

数据表

OptiMOS™ 6 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 120 V 5.7A (Ta), 24A (Tc) 3.3V, 10V 33mOhm @ 9A, 10V 2.2V @ 11µA 10.1 nC @ 10 V ±20V 650 pF @ 60 V - 2.5W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TSDSON-8 FL
PJD40P03E-AU_L2_006A1

PJD40P03E-AU_L2_006A1

30V P-CHANNEL ENHANCEMENT MODE M

Panjit International Inc.

3,000 -
PJD40P03E-AU_L2_006A1

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 10A (Ta), 33A (Tc) 4.5V, 10V 18.8mOhm @ 20A, 10V 2.5V @ 250µA 22 nC @ 10 V ±25V 1009 pF @ 25 V - 3W (Ta), 33W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount TO-252AA
深圳市宝利科技有限公司

搜索

深圳市宝利科技有限公司

产品

深圳市宝利科技有限公司

电话

深圳市宝利科技有限公司

用户