场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
NVB260N65S3

NVB260N65S3

SF3 650V EASY 260MOHM D2PAK AUTO

onsemi

740 -
NVB260N65S3

数据表

SuperFET® III TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 12A (Tc) 10V 260mOhm @ 6A, 10V 4.5V @ 290µA 24 nC @ 10 V ±30V 1010 pF @ 400 V - 90W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
IPA600N25NM3SXKSA1

IPA600N25NM3SXKSA1

MOSFET N-CH 250V 15A TO220

Infineon Technologies

276 -
IPA600N25NM3SXKSA1

数据表

OptiMOS™ 3 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 250 V 15A (Tc) 10V 60mOhm @ 15A, 10V 4V @ 89µA 29 nC @ 10 V ±20V 2300 pF @ 100 V - 38W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220 Full Pack
IPP089N15NM6AKSA1

IPP089N15NM6AKSA1

TRENCH >=100V

Infineon Technologies

1,981 -
IPP089N15NM6AKSA1

数据表

OptiMOS™ 6 TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 150 V 13.6A (Ta), 88A (Tc) 8V, 15V 8.4mOhm @ 32A, 15V 4V @ 73µA 38 nC @ 10 V ±20V 2700 pF @ 75 V - 3.8W (Ta), 158W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
RCJ200N20TL

RCJ200N20TL

MOSFET N-CH 200V 20A LPTS

Rohm Semiconductor

976 -
RCJ200N20TL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 20A (Tc) 10V 130mOhm @ 10A, 10V 5V @ 1mA 40 nC @ 10 V ±30V 1900 pF @ 25 V - 1.56W (Ta), 106W (Tc) 150°C (TJ) - - Surface Mount LPTS
NTMFS010N10GTWG

NTMFS010N10GTWG

100V MVSOA IN PQFN56 PACKAGE

onsemi

2,900 -
NTMFS010N10GTWG

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 11A (Tc) 10V 10.8mOhm @ 31A, 10V 4V @ 164µA 58.5 nC @ 10 V ±20V 3950 pF @ 50 V - 3W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-PQFN (5x6)
NVMFS4C302NWFT1G

NVMFS4C302NWFT1G

MOSFET N-CH 30V 43A/241A 5DFN

onsemi

1,500 -
NVMFS4C302NWFT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 43A (Ta), 241A (Tc) 4.5V, 10V 1.15mOhm @ 30A, 10V 2.2V @ 250µA 82 nC @ 10 V ±20V 5780 pF @ 15 V - 3.75W (Ta), 115W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount, Wettable Flank 5-DFN (5x6) (8-SOFL)
TK13A50D(STA4,Q,M)

TK13A50D(STA4,Q,M)

MOSFET N-CH 500V 13A TO220SIS

Toshiba Semiconductor and Storage

110 -
TK13A50D(STA4,Q,M)

数据表

π-MOSVII TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 13A (Ta) 10V 400mOhm @ 6.5A, 10V 4V @ 1mA 38 nC @ 10 V ±30V 1800 pF @ 25 V - 45W (Tc) 150°C (TJ) - - Through Hole TO-220SIS
RS6G120BHTB1

RS6G120BHTB1

NCH 40V 210A, HSOP8, POWER MOSFE

Rohm Semiconductor

2,500 -
RS6G120BHTB1

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 6V, 10V 1.38mOhm @ 90A, 10V 4V @ 1mA 67 nC @ 10 V ±20V 4790 pF @ 20 V - 3W (Ta), 104W (Tc) 150°C (TJ) - - Surface Mount 8-HSOP
SI7846DP-T1-GE3

SI7846DP-T1-GE3

MOSFET N-CH 150V 4A PPAK SO-8

Vishay Siliconix

1,914 -
SI7846DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 150 V 4A (Ta) 10V 50mOhm @ 5A, 10V 4.5V @ 250µA 36 nC @ 10 V ±20V - - 1.9W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
FDPF035N06B-F154

FDPF035N06B-F154

MOSFET N-CH 60V 88A TO220F

onsemi

985 -
FDPF035N06B-F154

数据表

PowerTrench® TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 60 V 88A (Tc) - 3.5mOhm @ 88A, 10V 4V @ 250µA 99 nC @ 10 V ±20V 8030 pF @ 30 V - 46.3W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220F
SIHA20N50E-E3

SIHA20N50E-E3

MOSFET N-CH 500V 19A TO220

Vishay Siliconix

496 -
SIHA20N50E-E3

数据表

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 500 V 19A (Tc) 10V 184mOhm @ 10A, 10V 4V @ 250µA 92 nC @ 10 V ±30V 1640 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220 Full Pack
NTMJS1D2N04CLTWG

NTMJS1D2N04CLTWG

MOSFET N-CH 40V 41A/237A 8LFPAK

onsemi

3,000 -
NTMJS1D2N04CLTWG

数据表

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 41A (Ta), 237A (Tc) 4.5V, 10V 1.2mOhm @ 50A, 10V 2V @ 170µA 93 nC @ 10 V ±20V 5600 pF @ 25 V - 3.8W (Ta), 128W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-LFPAK
IPI120N04S401AKSA1

IPI120N04S401AKSA1

MOSFET N-CH 40V 120A TO262-3

Infineon Technologies

225 -
IPI120N04S401AKSA1

数据表

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 1.9mOhm @ 100A, 10V 4V @ 140µA 176 nC @ 10 V ±20V 14000 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
SIRS4302DP-T1-GE3

SIRS4302DP-T1-GE3

N-CHANNEL 30 V (D-S) MOSFET POWE

Vishay Siliconix

11,921 -
SIRS4302DP-T1-GE3

数据表

TrenchFET® PowerPAK® SO-8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 87A (Ta), 478A (Tc) 4.5V, 10V 0.57mOhm @ 20A, 10V 2.2V @ 250µA 230 nC @ 10 V +20V, -16V 10150 pF @ 15 V - 6.9W (Ta), 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® SO-8
RS6L120BHTB1

RS6L120BHTB1

NCH 60V 150A, HSOP8, POWER MOSFE

Rohm Semiconductor

2,500 -
RS6L120BHTB1

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 6V, 10V 2.7mOhm @ 90A, 10V 4V @ 1mA 51 nC @ 10 V ±20V 4080 pF @ 30 V - 3W (Ta), 104W (Tc) 150°C (TJ) - - Surface Mount 8-HSOP
PSMN5R0-80BS,118

PSMN5R0-80BS,118

MOSFET N-CH 80V 100A D2PAK

Nexperia USA Inc.

4,257 -
PSMN5R0-80BS,118

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 100A (Tc) 10V 5.1mOhm @ 25A, 10V 4V @ 1mA 101 nC @ 10 V ±20V 6793 pF @ 40 V - 270W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK
IPI60R199CPXKSA2

IPI60R199CPXKSA2

HIGH POWER_LEGACY

Infineon Technologies

500 -
IPI60R199CPXKSA2

数据表

CoolMOS® TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 660µA 43 nC @ 10 V ±20V 1520 pF @ 100 V - 139W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO262-3-1
SIHB25N50E-GE3

SIHB25N50E-GE3

MOSFET N-CH 500V 26A TO263

Vishay Siliconix

1,000 -
SIHB25N50E-GE3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 500 V 26A (Tc) 10V 145mOhm @ 12A, 10V 4V @ 250µA 86 nC @ 10 V ±30V 1980 pF @ 100 V - 250W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
XPJR6604PB,LXHQ

XPJR6604PB,LXHQ

40V; UMOS9; 0.66MOHM; S-TOGL

Toshiba Semiconductor and Storage

7,017 -
XPJR6604PB,LXHQ

数据表

U-MOSIX-H 5-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 200A (Ta) 6V, 10V 0.66mOhm @ 100A, 10V 3V @ 1mA 128 nC @ 10 V ±20V 11380 pF @ 10 V - 375W (Tc) 175°C Automotive AEC-Q101 Surface Mount S-TOGL™
NVMJS0D9N04CTWG

NVMJS0D9N04CTWG

MOSFET N-CH 40V 52A/342A 8LFPAK

onsemi

2,123 -
NVMJS0D9N04CTWG

数据表

- SOT-1205, 8-LFPAK56 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 52A (Ta), 342A (Tc) 10V 0.81mOhm @ 50A, 10V 4V @ 250µA 117 nC @ 10 V 20V 7400 pF @ 20 V - 4.2W (Ta), 180W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-LFPAK
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