场效应晶体管（FETs）、MOSFETs
| 图片 | 厂商型号 | 可用性 | 价格 | 数量 | 数据表 | 系列 | 封装/外壳 | 包装 | 产品状态 | FET 类型 | 技术 | 漏极到源极电压 (Vdss) | 电流 - 连续漏极 (Id) @ 25°C | 驱动电压（最大导通电阻，最小导通电阻） | 导通电阻 (Rds On)（最大值）@ Id, Vgs | 栅极阈值电压 (Vgs(th)）（最大值）@ Id | 栅极电荷 (Qg)（最大值）@ Vgs | 栅极电压 (Vgs)（最大值） | 输入电容 (Ciss)（最大值）@ Vds | FET 特性 | 功耗（最大值） | 工作温度 | 等级 | 认证 | 安装类型 | 供应商设备封装 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AOM015V65X2650V SILICON CARBIDE MOSFET |
238 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 96A (Tc) | 15V | 22mOhm @ 24A, 15V | 3.5V @ 24mA | 152 nC @ 15 V | +15V, -5V | 4880 pF @ 400 V | - | 312W (Tj) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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AOK015V65X2650V SILICON CARBIDE MOSFET |
238 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 96A (Tc) | 15V | 22mOhm @ 24A, 15V | 3.5V @ 24mA | 152 nC @ 15 V | +15V, -5V | 4880 pF @ 400 V | - | 312W (Tj) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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C3M0025075K1SICFET N-CH 750V 80A TO247 |
184 | - |
|
数据表 |
- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 80A (Ta) | 15V | 34mOhm @ 33.5A, 15V | 3.8V @ 9.22mA | 119 nC @ 15 V | -8V, +19V | 3055 pF @ 500 V | - | 262W (Tc) | -40°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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NVHL025N065SC1SIC MOS TO247-3L 650V |
450 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 99A (Tc) | 15V, 18V | 28.5mOhm @ 45A, 18V | 4.3V @ 15.5mA | 164 nC @ 18 V | +22V, -8V | 3480 pF @ 325 V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-3 |
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|
NSF040120L4A0QNSF040120L4A0/SOT8071/TO247-4L |
432 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 65A (Tj) | 15V, 18V | 60mOhm @ 40A, 15V | 2.9V @ 4mA | 95 nC @ 15 V | +22V, -10V | 2600 pF @ 800 V | - | 306W (Tj) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247 |
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NVH4L025N065SC1SIC MOS TO247-4L 650V |
882 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 99A (Tc) | 15V, 18V | 28.5mOhm @ 45A, 18V | 4.3V @ 15.5mA | 164 nC @ 18 V | +22V, -8V | 3480 pF @ 325 V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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|
IPQC60R010S7XTMA1MOSFET |
750 | - |
|
数据表 |
CoolMOS™ S7 | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 12V | 10mOhm @ 50A, 12V | 4.5V @ 3.08mA | 318 nC @ 12 V | ±20V | - | - | 694W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22 |
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NTHL019N60S5FSUPERFET5 FRFET, 19MOHM, TO-247- |
442 | - |
|
数据表 |
SuperFET® V, FRFET® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 75A (Tc) | 10V | 19mOhm @ 37.5A,10V | 4.8V @ 15.7mA | 252 nC @ 10 V | ±30V | 13400 pF @ 400 V | - | 568W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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E3M0040120J2-TR40m, 1200V SiC FET, TO-263-7 XL |
736 | - |
|
数据表 |
E | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 63A (Tc) | 15V | 53mOhm @ 31.9A, 15V | 3.8V @ 8.77mA | 91 nC @ 15 V | +19V, -8V | 2726 pF @ 1000 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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|
AOM020V120X21200V SILICON CARBIDE MOSFET |
230 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 89A (Tc) | 15V | 28mOhm @ 27A, 15V | 2.8V @ 27mA | 166 nC @ 15 V | +18V, -8V | 5180 pF @ 800 V | - | 348W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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S2M0016120D-1MOSFET SILICON CARBIDE SIC 1200V |
300 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 140A (Tc) | 18V, 20V | 23mOhm @ 75A, 20V | 3.6V @ 23mA | 285 nC @ 20 V | +20V, -5V | 4540 pF @ 1000 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AD |
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NVH4L030N120M3SSILICON CARBIDE (SIC) MOSFET-ELI |
393 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 73A (Tc) | 18V | 39mOhm @ 30A, 18V | 4.4V @ 15mA | 107 nC @ 18 V | +22V, -10V | 2430 pF @ 800 V | - | 313W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4L |
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S2M0016120K-1MOSFET SILICON CARBIDE SIC 1200V |
147 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 140A (Tc) | 18V, 20V | 23mOhm @ 75A, 20V | 3.6V @ 23mA | 285 nC @ 20 V | +20V, -5V | 4540 pF @ 1000 V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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TSG65N068CE RVG650V, 30A, PDFN88, E-MODE GAN TR |
2,962 | - |
|
数据表 |
* | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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C3M0065100J-TRSICFET N-CH 1000V 35A TO263-7 |
788 | - |
|
数据表 |
C3M™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Last Time Buy | N-Channel | SiCFET (Silicon Carbide) | 1000 V | 35A (Tc) | 15V | 78mOhm @ 20A, 15V | 3.5V @ 5mA | 35 nC @ 15 V | +15V, -4V | 660 pF @ 600 V | - | 113.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263-7 |
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G3F20MT12J-TR1200V 20M TO-263-7 G3F SIC MOSFE |
800 | - |
|
- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 108A (Tc) | 18V | 26.5mOhm @ 40A, 18V | 4.3V @ 30mA | 176 nC @ 18 V | +22V, -10V | 4317 pF @ 800 V | - | 448W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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IMZA75R016M1HXKSA1SILICON CARBIDE MOSFET |
210 | - |
|
数据表 |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 89A (Tj) | 15V, 20V | 15mOhm @ 41.5A, 20V | 5.6V @ 14.9mA | 81 nC @ 18 V | +23V, -5V | 2869 pF @ 500 V | - | 319W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO247-4 |
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AIMZA75R016M1HXKSA1SICFET N-CH 750V 89A PG-TO247-4 |
213 | - |
|
数据表 |
CoolSiC™ | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 750 V | 89A (Tc) | 15V, 20V | 22mOhm @ 41.5A, 18V | 5.6V @ 14.9mA | 81 nC @ 18 V | +23V, -5V | 2869 pF @ 500 V | - | 319W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-4 |
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DIF120SIC053-AQMOSFET TO-247-4L N 65A 1200V |
433 | - |
|
数据表 |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 65A (Tc) | 18V | 53mOhm @ 33A, 18V | 4V @ 9.5mA | 121 nC @ 15 V | - | 2070 pF @ 1000 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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DIW120SIC059-AQMOSFET TO-247-3L N 65A 1200V |
430 | - |
|
数据表 |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 65A (Tc) | 18V | 53mOhm @ 33A, 18V | 4V @ 9.5mA | 121 nC @ 15 V | - | 2070 pF @ 1000 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
