场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
EPC7004BC

EPC7004BC

GAN FET HEMT100V30A COTS 4FSMD-B

EPC Space, LLC

41 -
EPC7004BC

数据表

- 4-SMD, No Lead Tray Active N-Channel GaNFET (Gallium Nitride) 100 V 30A (Tc) 5V 13mOhm @ 30A, 5V 2.5V @ 7mA 7 nC @ 5 V +6V, -4V 797 pF @ 50 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
EPC7001BC

EPC7001BC

GAN FET HEMT 40V30A COTS 4FSMD-B

EPC Space, LLC

146 -

-

- - Bulk Active - - - - - - - - - - - - - - - - -
EPC7002AC

EPC7002AC

GAN FET HEMT 40V 8A COTS 4FSMD-A

EPC Space, LLC

89 -

-

- - Bulk Active - - - - - - - - - - - - - - - - -
EPC7007BSH

EPC7007BSH

GAN FET HEMT 200V 18A 4UB

EPC Space, LLC

50 -
EPC7007BSH

数据表

eGaN®, FSMD-B 4-SMD, No Lead Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 5V 28mOhm @ 18A, 5V 2.5V @ 3mA 7 nC @ 5 V +6V, -4V 900 pF @ 100 V - - -55°C ~ 150°C (TJ) - - Surface Mount 4-SMD
EPC7001BSH

EPC7001BSH

GAN FET HEMT 40V 30A 4FSMD-B

EPC Space, LLC

50 -

-

- - Bulk Active - - - - - - - - - - - - - - - - -
EPC7002ASH

EPC7002ASH

GAN FET HEMT 40V 8A 4FSMD-A

EPC Space, LLC

50 -

-

- - Bulk Active - - - - - - - - - - - - - - - - -
5HP01SS-TL-E

5HP01SS-TL-E

MOSFET P-CH 50V 70MA SSFP3

onsemi

9,530 -

-

- 3-SMD, Flat Leads Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - Surface Mount 3-SSFP
2N7002K-EVL

2N7002K-EVL

MOSFET Single,SOT-23,60V,300mA,N

Venkel

20,515 -

-

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) 4.5V, 10V 3Ohm @ 500mA, 10V 2.5V @ 250µA 0.8 nC @ 5 V ±20V 35 pF @ 25 V - 350mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
2SK2858-T1-A

2SK2858-T1-A

MOSFET N-CH 30V 100MA SC70-3 SSP

Renesas Electronics Corporation

38,000 -
2SK2858-T1-A

数据表

- SC-70, SOT-323 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) - 5Ohm @ 10mA, 10V 1.8V @ 10µA - - 9 pF @ 3 V - - - - - Surface Mount SC-70-3, SSP, Miniature Mini Mold
NX7002BKVL

NX7002BKVL

MOSFET N-CH 60V 270MA TO236AB

Nexperia USA Inc.

5,275 -
NX7002BKVL

数据表

TrenchMOS™ TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 270mA (Ta) 5V, 10V 2.8Ohm @ 200mA, 10V 2.1V @ 250µA 1 nC @ 10 V ±20V 23.6 pF @ 10 V - 310mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount TO-236AB
NX138AKVL

NX138AKVL

MOSFET N-CH 60V 190MA TO236AB

Nexperia USA Inc.

3,785 -
NX138AKVL

数据表

TrenchMOS™ TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 190mA (Ta) 2.5V, 10V 4.5Ohm @ 190mA, 10V 1.5V @ 250µA 1.4 nC @ 10 V ±20V 20 pF @ 30 V - 265mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount TO-236AB
G3035

G3035

MOSFET P-CH 30V 4.6A SOT-23

Goford Semiconductor

117,000 -
G3035

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) - 4.6A (Tc) 4.5V, 10V 59mOhm @ 4A, 10V 2V @ 250µA - ±20V - - 1.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
G2312

G2312

MOSFET N-CH 20V 5A SOT-23

Goford Semiconductor

75,000 -
G2312

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - 5A (Tc) 4.5V, 10V 18mOhm @ 4.2A, 10V 1V @ 250µA - ±12V - - 1.25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
3401

3401

MOSFET P-CH 30V 4.2A SOT-23

Goford Semiconductor

15,000 -
3401

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) - 4.2A (Tc) 4.5V, 10V 55mOhm @ 4A, 10V 1.3V @ 250µA - ±12V - - 1.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
G02P06

G02P06

MOSFET P-CH 60V 1.6A,SOT-23

Goford Semiconductor

45,000 -
G02P06

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) - 1.6A (Tc) 4.5V, 10V 190mOhm @ 1A, 10V 2.5V @ 250µA - ±20V - - 1.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
PMZB1200UPEYL

PMZB1200UPEYL

NEXPERIA PMZB1200U - 30V, P-CHAN

NXP Semiconductors

594,000 -
PMZB1200UPEYL

数据表

- 3-XFDFN Bulk Active P-Channel MOSFET (Metal Oxide) 30 V 410mA (Ta) 1.5V, 4.5V 1.4Ohm @ 410mA, 4.5V 950mV @ 250µA 1.2 nC @ 4.5 V ±8V 43.2 pF @ 15 V - 310mW (Ta), 1.67W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DFN1006B-3
FDV301N-F169

FDV301N-F169

MOSFET N-CH 25V 220MA SOT23

onsemi

9,099 -
FDV301N-F169

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 220mA (Ta) 2.7V, 4.5V 4Ohm @ 400mA, 4.5V 1.06V @ 250µA 0.7 nC @ 4.5 V ±8V 9.5 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
PMV100XPEA215

PMV100XPEA215

NEXPERIA PMV100 - P-CHANNEL MOSF

NXP Semiconductors

39,000 -
PMV100XPEA215

数据表

- TO-236-3, SC-59, SOT-23-3 Bulk Active P-Channel MOSFET (Metal Oxide) 20 V 2.4A (Ta) - 128mOhm @ 2.4A, 4.5V 1.25V @ 250µA 6 nC @ 4.5 V ±12V 386 pF @ 10 V - 463mW (Ta), 4.45W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
BSS119NH7796

BSS119NH7796

SMALL SIGNAL N-CHANNEL MOSFET

Infineon Technologies

10,000 -
BSS119NH7796

数据表

OptiMOS™ TO-236-3, SC-59, SOT-23-3 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 190mA (Ta) 4.5V, 10V 6Ohm @ 190mA, 10V 2.3V @ 13µA 0.6 nC @ 10 V ±20V 20.9 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT23-3-5
BSS84

BSS84

MOSFET SOT-23 P Channel 50V

MDD

237,000 -
BSS84

数据表

SOT-23 TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 50 V 130mA (Ta) 5V, 10V 8Ohm @ 100mA, 10V 2V @ 250µA 1.77 nC @ 10 V ±20V 30 pF @ 5 V - 225mW (Ta) -55°C ~ 150°C - - Surface Mount SOT-23-3
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