场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
MCH3444-TL-E

MCH3444-TL-E

NCH 2.5V DRIVE SERIES

onsemi

12,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
NTP4813NLG

NTP4813NLG

MOSFET N-CH 30V 10.2A TO220AB

onsemi

6,982 -
NTP4813NLG

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 30 V 10.2A (Ta) 4.5V, 10V 13.1mOhm @ 20A, 10V 2.5V @ 250µA 17 nC @ 11.5 V ±20V 895 pF @ 12 V - 2.4W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
NVTFS5824NLWFTAG

NVTFS5824NLWFTAG

MOSFET N-CH 60V 20A 8WDFN

onsemi

3,931 -
NVTFS5824NLWFTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 37A (Tc) 4.5V, 10V 20.5mOhm @ 10A, 10V 2.5V @ 250µA 16 nC @ 10 V ±20V 850 pF @ 25 V - 3.2W (Ta), 57W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-WDFN (3.3x3.3)
SCH1406-TL-E

SCH1406-TL-E

MOSFET N-CH

Sanyo

10,000 -
SCH1406-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
IRF8736PBF

IRF8736PBF

MOSFET N-CH 30V 18A 8SO

Infineon Technologies

4,709 -
IRF8736PBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta) 4.5V, 10V 4.8mOhm @ 18A, 10V 2.35V @ 50µA 26 nC @ 4.5 V ±20V 2315 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
6LN04MH-TL-E

6LN04MH-TL-E

N-CHANNEL POWER MOSFET

onsemi

9,000 -
6LN04MH-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
MCH5835-TL-E

MCH5835-TL-E

NCH+SBD 2.5V DRIVE SERIES

onsemi

6,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
G800N06H

G800N06H

MOSFET N-CH 60V 3A SOT-223

Goford Semiconductor

25,000 -
G800N06H

数据表

TrenchFET® TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - 3A (Tc) 4.5V, 10V 80mOhm @ 3A, 10V 1.2V @ 250µA - ±20V - - 1.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
G7P03L

G7P03L

MOSFET P-CH 30V 7A SOT-23-3L

Goford Semiconductor

150,000 -
G7P03L

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) - 7A (Tc) 4.5V, 10V 23mOhm @ 3A, 10V 2.5V @ 250µA - ±20V - - 1.9W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
MMFTN3422K

MMFTN3422K

MOSFET, SOT-23, 30V, 4.2A, 0, 1.

Diotec Semiconductor

3,000 -
MMFTN3422K

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 4.2A (Tj) 2.5V, 10V 42mOhm @ 4.2A, 10V 1.2V @ 250µA 14.5 nC @ 10 V ±12V 387 pF @ 25 V - 1.25W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
G09P02L

G09P02L

MOSFET P-CH 20V 9A SOT-23-3L

Goford Semiconductor

90,000 -
G09P02L

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) - 9A (Tc) 2.5V, 4.5V 20mOhm @ 1A, 4.5V 1.2V @ 250µA - ±12V - - 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
G2003A

G2003A

MOSFET N-CH 190V 3A SOT-23-3L

Goford Semiconductor

57,000 -
G2003A

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - 3A (Tc) 4.5V, 10V 540mOhm @ 2A, 10V 3V @ 250µA - ±20V - - 1.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
AAT7347IAS-T1

AAT7347IAS-T1

MOSFET 8SOP

Skyworks Solutions Inc.

15,000 -

-

* - Tape & Reel (TR) Discontinued at Digi-Key - - - - - - - - - - - - - - - - -
EC4404C-TL

EC4404C-TL

NCH 1.5V DRIVE SERIES

onsemi

1,140,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
MCH6423-TL-E

MCH6423-TL-E

NCH 4V DRIVE SERIES

onsemi

576,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
NTD4815NHT4G

NTD4815NHT4G

MOSFET N-CH 30V 6.9A/35A DPAK

onsemi

9,751 -
NTD4815NHT4G

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.9A (Ta), 35A (Tc) 4.5V, 11.5V 15mOhm @ 30A, 10V 2.5V @ 250µA 6.8 nC @ 4.5 V ±20V 845 pF @ 12 V - 1.26W (Ta), 32.6W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
3LN01SS-TL-H

3LN01SS-TL-H

MOSFET N-CH 30V 150MA SMCP

onsemi

8,628 -
3LN01SS-TL-H

数据表

- SC-75, SOT-416 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 150mA (Ta) 1.5V, 4V 3.7Ohm @ 80mA, 4V - 1.58 nC @ 10 V ±10V 7 pF @ 10 V - 150mW (Ta) 150°C (TJ) - - Surface Mount SMCP
5LN01SS-TL-H

5LN01SS-TL-H

MOSFET N-CH 50V 100MA 3SSFP

onsemi

3,888 -
5LN01SS-TL-H

数据表

- SC-81 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50 V 100mA (Ta) 1.5V, 4V 7.8Ohm @ 50mA, 4V - 1.57 nC @ 10 V ±10V 6.6 pF @ 10 V - 150mW (Ta) 150°C (TJ) - - Surface Mount 3-SSFP
MCH3309-TL-H

MCH3309-TL-H

PCH 2.5V DRIVE SERIES

onsemi

327,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
NTNS3A65PZT5G

NTNS3A65PZT5G

MOSFET P-CH 20V 281MA SOT883

onsemi

7,556 -
NTNS3A65PZT5G

数据表

- 3-XFDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 281mA (Ta) 1.5V, 4.5V 1.3Ohm @ 200mA, 4.5V 1V @ 250µA 1.1 nC @ 4.5 V ±8V 44 pF @ 10 V - 155mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-883 (XDFN3) (1x0.6)
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