场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
NTS4172NT1G

NTS4172NT1G

MOSFET N-CH 30V 1.6A SC70-3

onsemi

4,632 -
NTS4172NT1G

数据表

- SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 1.6A (Ta) 2.5V, 10V 93mOhm @ 1.7A, 10V 1.4V @ 250µA 4.38 nC @ 4.5 V ±12V 381 pF @ 15 V - 294mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-70-3 (SOT323)
2SK1847-TB-E

2SK1847-TB-E

NCH 4V DRIVE SERIES

onsemi

3,000 -
2SK1847-TB-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
5HN02N-AA

5HN02N-AA

TRANS MOSFET N-CH 50V 0.2A

onsemi

3,000 -
5HN02N-AA

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
MCH3333-TL-E

MCH3333-TL-E

TRANSISTOR

onsemi

3,000 -
MCH3333-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
2SK3720-6-TB-E

2SK3720-6-TB-E

NCH 30MA 15V MOSFET

onsemi

3,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
BSS138

BSS138

50V 220MA 3.5@10V,220MA 225MW N

Shenzhen Slkormicro Semicon Co., Ltd.

1,785 -

-

- TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 50 V 220mA 4.5V, 10V 3.5Ohm @ 220mA, 10V 1.6V @ 1mA - ±20V 50 pF @ 25 V - 225mW (Ta) 150°C (TJ) - - Surface Mount SOT-23
G700P06H

G700P06H

MOSFET P-CH 60V 5A SOT-223

Goford Semiconductor

15,000 -
G700P06H

数据表

TrenchFET® TO-261-4, TO-261AA Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) - 5A (Tc) 4.5V, 10V 75mOhm @ 6A, 10V 2.5V @ 250µA - ±20V - - 3.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
SI2301S-2.3A

SI2301S-2.3A

MOSFET SOT-23 P Channel 20V

MDD

528,000 -
SI2301S-2.3A

数据表

SOT-23 TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 3.3V, 4.5V 90mOhm @ 3A, 4.5V 1V @ 250µA 6.6 nC @ 10 V ±10V 330 pF @ 10 V - 225mW (Ta) -55°C ~ 150°C - - Surface Mount SOT-23
G7K2N20HE

G7K2N20HE

MOSFET N-CH ESD 200V 2A SOT-223

Goford Semiconductor

5,000 -
G7K2N20HE

数据表

TrenchFET® TO-261-4, TO-261AA Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - 2A (Tc) 4.5V, 10V 700mOhm @ 1A, 10V 2.5V @ 250µA - ±20V - - 1.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
2SK2552C-T1-A

2SK2552C-T1-A

N-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics Corporation

665,391 -
2SK2552C-T1-A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
MCH6627-TL-E

MCH6627-TL-E

P-CHANNEL SILICON MOSFET

Sanyo

519,000 -
MCH6627-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
CPH3314-TL-E

CPH3314-TL-E

MOSFET P-CH

Sanyo

468,010 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
SCH1330-TL-H

SCH1330-TL-H

MOSFET P-CH 20V 1.5A 6SCH

onsemi

3,147 -
SCH1330-TL-H

数据表

- SOT-563, SOT-666 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 1.8V, 4.5V 241mOhm @ 750mA, 4.5V 1.4V @ 1mA 1.7 nC @ 4.5 V ±10V 120 pF @ 10 V - 1W (Ta) 150°C (TJ) - - Surface Mount 6-SCH
NTD23N03RT4G

NTD23N03RT4G

MOSFET N-CH 25V 3.8A/17.1A DPAK

onsemi

7,840 -
NTD23N03RT4G

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 3.8A (Ta), 17.1A (Tc) 4V, 5V 45mOhm @ 6A, 10V 2V @ 250µA 3.76 nC @ 4.5 V ±20V 225 pF @ 20 V - 1.14W (Ta), 22.3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
CPH3314-TL-E-ON

CPH3314-TL-E-ON

MOSFET P-CH

onsemi

354,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
CPH3325-TL-E

CPH3325-TL-E

PCH 4V DRIVE SERIES

onsemi

350,900 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
FDG314P

FDG314P

MOSFET P-CH 25V 650MA SC88

Fairchild Semiconductor

335,960 -
FDG314P

数据表

- 6-TSSOP, SC-88, SOT-363 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 25 V 650mA (Ta) 2.7V, 4.5V 1.1Ohm @ 500mA, 4.5V 1.5V @ 250µA 1.5 nC @ 4.5 V ±8V 63 pF @ 10 V - 750mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-88 (SC-70-6)
NTD60N02R-1G

NTD60N02R-1G

MOSFET N-CH 25V 8.5A/32A IPAK

onsemi

3,760 -
NTD60N02R-1G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 8.5A (Ta), 32A (Tc) 4.5V, 10V 10.5mOhm @ 20A, 10V 2V @ 250µA 14 nC @ 4.5 V ±20V 1330 pF @ 20 V - 1.25W (Ta), 58W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
MCH3322-TL-E

MCH3322-TL-E

TRANSISTOR

onsemi

201,000 -
MCH3322-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
MCH5836-TL-E

MCH5836-TL-E

PCH+SBD 1.8V DRIVE SERIES

onsemi

189,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
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