场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
PMZB380XN,315

PMZB380XN,315

MOSFET N-CH 30V 930MA DFN1006B-3

NXP USA Inc.

236,794 -
PMZB380XN,315

数据表

- SC-101, SOT-883 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 930mA (Ta) 2.5V, 4.5V 460mOhm @ 200mA, 4.5V 1.5V @ 250µA 0.87 nC @ 4.5 V ±12V 56 pF @ 25 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DFN1006B-3
PMZB300XN,315

PMZB300XN,315

MOSFET N-CH 20V 1A DFN1006B-3

NXP USA Inc.

230,000 -
PMZB300XN,315

数据表

- SC-101, SOT-883 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 20 V 1A (Ta) 2.5V, 4.5V 380mOhm @ 200mA, 4.5V 1.5V @ 250µA 0.94 nC @ 4.5 V ±12V 51 pF @ 20 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DFN1006B-3
5HN01M-TL-H

5HN01M-TL-H

MOSFET N-CH 50V 100MA 3MCP

onsemi

3,149 -
5HN01M-TL-H

数据表

- SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 50 V 100mA (Ta) 4V, 10V 7.5Ohm @ 50mA, 10V - 1.4 nC @ 10 V ±20V 6.2 pF @ 10 V - 150mW (Ta) 150°C (TJ) - - Surface Mount MCP
SCH1419-TL-E

SCH1419-TL-E

NCH 2.5V DRIVE SERIES

onsemi

210,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
CPH3417-TL-E

CPH3417-TL-E

NCH 1.8V DRIVE SERIES

onsemi

147,000 -
CPH3417-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
3LP01S-K-TL-E

3LP01S-K-TL-E

MOSFET P-CH 30V 0.1A SMCP

onsemi

3,908 -

-

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete - - - 100mA (Tj) - - - - - - - - 150°C (TJ) - - Surface Mount SMCP
2SK2169-AZ

2SK2169-AZ

N-CHANNEL SMALL SIGNAL MOSFET

onsemi

142,500 -
2SK2169-AZ

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
BS170-D26Z

BS170-D26Z

SMALL SIGNAL FIELD-EFFECT TRANSI

Fairchild Semiconductor

128,646 -
BS170-D26Z

数据表

- TO-226-3, TO-92-3 (TO-226AA) Formed Leads Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 500mA (Ta) 10V 5Ohm @ 200mA, 10V 3V @ 1mA - ±20V 40 pF @ 10 V - 830mW (Ta) -55°C ~ 150°C (TJ) - - Through Hole TO-92-3
5HN01S-TL-E

5HN01S-TL-E

MOSFET N-CH 50V 100MA SMCP3

onsemi

8,094 -

-

- SC-75, SOT-416 Tape & Reel (TR) Obsolete - - - - - - - - - - - - - - - Surface Mount SMCP
PMF87EN,115

PMF87EN,115

MOSFET N-CH 30V 1.7A SOT323-3

NXP USA Inc.

2,748 -
PMF87EN,115

数据表

- SC-70, SOT-323 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 1.7A (Ta) 4.5V, 10V 80mOhm @ 1.7A, 10V 2.5V @ 250µA 4.7 nC @ 10 V ±20V 135 pF @ 15 V - 275mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-70
SCH1301-TL-E

SCH1301-TL-E

MOSFET P-CH 12V 2.4A 6SCH

onsemi

100,000 -

-

- 6-SMD, Flat Leads Bulk Obsolete P-Channel MOSFET (Metal Oxide) 12 V 2.4A (Ta) - 120mOhm @ 1.3A, 4.5V - 6.5 nC @ 4.5 V - 450 pF @ 6 V - 800mW (Ta) 150°C (TJ) - - Surface Mount 6-SCH
PMZB790SN,315

PMZB790SN,315

MOSFET N-CH 60V 650MA DFN1006B-3

NXP USA Inc.

98,722 -
PMZB790SN,315

数据表

- SC-101, SOT-883 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 650mA (Ta) 4.5V, 10V 940mOhm @ 300mA, 10V 3V @ 250µA 1.37 nC @ 10 V ±20V 35 pF @ 30 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DFN1006B-3
NTD4809NA-1G

NTD4809NA-1G

MOSFET N-CH 30V 9.6A/58A IPAK

onsemi

3,459 -
NTD4809NA-1G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1456 pF @ 12 V - 1.3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
3LN01S-K-TL-E

3LN01S-K-TL-E

MOSFET N-CH 30V 0.15A SMCP

onsemi

7,049 -

-

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete - - - 150mA (Tj) - - - - - - - - 150°C (TJ) - - Surface Mount SMCP
CPH3405-TL-E

CPH3405-TL-E

NCH 4V DRIVE SERIES

onsemi

78,000 -
CPH3405-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
CPH3323-TL-E

CPH3323-TL-E

P-CHANNEL SILICON MOSFET

onsemi

77,987 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
MCH3476-TL-W

MCH3476-TL-W

MOSFET N-CH 20V 2A SC70FL/MCPH3

onsemi

6,871 -
MCH3476-TL-W

数据表

- 3-SMD, Flat Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 20 V 2A (Ta) 1.8V, 4.5V 125mOhm @ 1A, 4.5V 1.3V @ 1mA 1.8 nC @ 4.5 V ±12V 128 pF @ 10 V - 800mW (Ta) 150°C (TJ) - - Surface Mount SC-70FL/MCPH3
SCH2830-TL-E

SCH2830-TL-E

MOSFET P-CH 20V 1A 6SCH

onsemi

70,000 -

-

- 6-SMD, Flat Leads Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 1A (Ta) - 500mOhm @ 500mA, 4V - 1.5 nC @ 4 V - 115 pF @ 10 V Schottky Diode (Isolated) 600mW (Ta) 150°C (TJ) - - Surface Mount 6-SCH
NTD4815NH-1G

NTD4815NH-1G

MOSFET N-CH 30V 6.9A/35A IPAK

onsemi

3,209 -
NTD4815NH-1G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.9A (Ta), 35A (Tc) 4.5V, 11.5V 15mOhm @ 30A, 10V 2.5V @ 250µA 6.8 nC @ 4.5 V ±20V 845 pF @ 12 V - 1.26W (Ta), 32.6W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
PMZB420UN,315

PMZB420UN,315

MOSFET N-CH 30V 900MA DFN1006B-3

NXP USA Inc.

62,537 -
PMZB420UN,315

数据表

- SC-101, SOT-883 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 900mA (Ta) 1.8V, 4.5V 490mOhm @ 200mA, 4.5V 950mV @ 250µA 0.98 nC @ 4.5 V ±8V 65 pF @ 25 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DFN1006B-3
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