场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
NDDL01N60ZT4G

NDDL01N60ZT4G

MOSFET N-CH 600V 800MA DPAK

onsemi

9,172 -
NDDL01N60ZT4G

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 800mA (Ta) 10V 15Ohm @ 400mA, 10V 4.5V @ 50µA 4.9 nC @ 10 V ±30V 92 pF @ 25 V - 26W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
GSFW0501

GSFW0501

MOSFET, P-CH, SINGLE, -130MA, -5

Good-Ark Semiconductor

19,995 -
GSFW0501

数据表

- SC-101, SOT-883 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 50 V 130mA (Ta) 5V, 10V 6Ohm @ 130mA, 10V 3V @ 250µA - ±20V 32 pF @ 20 V - 150mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-883
2SJ463A-T1-AT

2SJ463A-T1-AT

MOSFET P-CH 30V 100MA SC70

Renesas Electronics Corporation

15,000 -
2SJ463A-T1-AT

数据表

- SC-70, SOT-323 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) - 13Ohm @ 10mA, 10V 1.7V @ 10µA - - 5000 pF @ 3 V - - - - - Surface Mount SC-70
NTD4813NH-35G

NTD4813NH-35G

MOSFET N-CH 30V 7.6A/40A IPAK

onsemi

4,411 -
NTD4813NH-35G

数据表

- TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.6A (Ta), 40A (Tc) 4.5V, 11.5V 13mOhm @ 30A, 10V 2.5V @ 250µA 10 nC @ 4.5 V ±20V 940 pF @ 12 V - 1.27W (Ta), 35.3W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
2SK2158(0)-T1B-A

2SK2158(0)-T1B-A

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics Corporation

13,800 -
2SK2158(0)-T1B-A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NTD95N02R-001

NTD95N02R-001

MOSFET N-CH 24V 12A/32A IPAK

onsemi

8,540 -
NTD95N02R-001

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 24 V 12A (Ta), 32A (Tc) 4.5V, 10V 5mOhm @ 20A, 10V 2V @ 250µA 21 nC @ 4.5 V ±20V 2400 pF @ 20 V - 1.25W (Ta), 86W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
SI3456DV

SI3456DV

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor

13,529 -
SI3456DV

数据表

PowerTrench® SOT-23-6 Thin, TSOT-23-6 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 5.1A (Ta) 4.5V, 10V 45mOhm @ 5.1A, 10V 2V @ 250µA 12.6 nC @ 10 V ±20V 463 pF @ 15 V - 800mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
NTD4865N-1G

NTD4865N-1G

MOSFET N-CH 25V 8.5A/44A IPAK

onsemi

3,468 -
NTD4865N-1G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 8.5A (Ta), 44A (Tc) 4.5V, 10V 10.9mOhm @ 30A, 10V 2.5V @ 250µA 10.8 nC @ 4.5 V ±20V 827 pF @ 12 V - 1.27W (Ta), 33.3W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
2SK3291-TD-E

2SK3291-TD-E

NCH 4V DRIVE SERIES

onsemi

12,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
2SK3290BNTL-E

2SK3290BNTL-E

N-CHANNEL MOSFET

Renesas Electronics Corporation

12,000 -
2SK3290BNTL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RJK03J4DPA-00#J5A

RJK03J4DPA-00#J5A

N-CHANNEL POWER SWITCHING MOSFET

Renesas Electronics Corporation

12,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
SSF6007

SSF6007

MOSFET, P-CH, SINGLE, -0.13A, -5

Good-Ark Semiconductor

11,949 -
SSF6007

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 50 V 130mA (Tc) 10V 7Ohm @ 130mA, 10V 2V @ 1mA - ±20V 45 pF @ 5 V - 230mW (Tc) -55°C ~ 150°C - - Surface Mount SOT-23
NDC631N

NDC631N

MOSFET N-CH 20V 4.1A SUPERSOT6

Fairchild Semiconductor

11,785 -
NDC631N

数据表

- SOT-23-6 Thin, TSOT-23-6 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 20 V 4.1A (Ta) 2.7V, 4.5V 60mOhm @ 4.1A, 4.5V 1V @ 250µA 14 nC @ 4.5 V 8V 365 pF @ 10 V - 1.6W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
IRFW720BTMNL

IRFW720BTMNL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

11,200 -
IRFW720BTMNL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 400 V 3.3A (Tc) 10V 1.75Ohm @ 1.65A, 10V 4V @ 250µA 18 nC @ 10 V ±30V 600 pF @ 25 V - 3.13W (Ta), 49W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
NDDL01N60Z-1G

NDDL01N60Z-1G

MOSFET N-CH 600V 800MA IPAK

onsemi

5,721 -
NDDL01N60Z-1G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 800mA (Ta) 10V 15Ohm @ 400mA, 10V 4.5V @ 50µA 4.9 nC @ 10 V ±30V 92 pF @ 25 V - 26W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
NTD85N02RT4G

NTD85N02RT4G

MOSFET N-CH 24V 12A/85A DPAK

onsemi

8,202 -
NTD85N02RT4G

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 24 V 12A (Ta), 85A (Tc) 4.5V, 10V 5.2mOhm @ 20A, 10V 2V @ 250µA 17.7 nC @ 5 V ±20V 2050 pF @ 20 V - 1.25W (Ta), 78.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
2SJ562-TD-E

2SJ562-TD-E

PCH 2.5V DRIVE SERIES

onsemi

9,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
SMC6280P

SMC6280P

MOSFET N-CH

Fairchild Semiconductor

9,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
NTGS3447PT1G

NTGS3447PT1G

MOSFET P-CH 12V 3.4A 6TSOP

onsemi

5,848 -
NTGS3447PT1G

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 12 V 3.4A (Ta) 1.8V, 4.5V 40mOhm @ 4.7A, 4.5V 1V @ 250µA 15 nC @ 4.5 V ±8V 1053 pF @ 6 V - 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-TSOP
NTD4860NA-1G

NTD4860NA-1G

MOSFET N-CH 25V 10.4A/65A IPAK

onsemi

8,325 -
NTD4860NA-1G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 10.4A (Ta), 65A (Tc) - 7.5mOhm @ 30A, 10V 2.5V @ 250µA 21.8 nC @ 10 V - 1308 pF @ 12 V - 1.28W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
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