场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
2SJ463A(0)-T1-A

2SJ463A(0)-T1-A

SMALL SIGNAL P-CHANNEL MOSFET

Renesas Electronics Corporation

123,000 -
2SJ463A(0)-T1-A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
2SK3292-TD-E

2SK3292-TD-E

NCH 4V DRIVE SERIES

onsemi

122,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
FDFC2P100

FDFC2P100

MOSFET P-CH 20V 3A SUPERSOT6

Fairchild Semiconductor

115,946 -
FDFC2P100

数据表

PowerTrench® SOT-23-6 Thin, TSOT-23-6 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 2.5V, 4.5V 150mOhm @ 3A, 4.5V 1.5V @ 250µA 4.7 nC @ 10 V ±12V 445 pF @ 10 V Schottky Diode (Isolated) 1.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
MCH3377-TL-H

MCH3377-TL-H

MOSFET P-CH 3A 20V MCPH3

onsemi

110,764 -
MCH3377-TL-H

数据表

- SC-70, SOT-323 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) - 83mOhm @ 1.5A, 4.5V - 4.6 nC @ 4.5 V - 375 pF @ 10 V - - - - - Surface Mount 3-MCPH
3LN03M-TL-E

3LN03M-TL-E

N-CHANNEL SILICON MOSFET

Sanyo

99,000 -
3LN03M-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
2SK1848-TB-E

2SK1848-TB-E

NCH 4V DRIVE SERIES

onsemi

96,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
MTSF3N02HDR2

MTSF3N02HDR2

SMALL SIGNAL N-CHANNEL MOSFET

onsemi

88,000 -
MTSF3N02HDR2

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
2SK3749(91)-T1-A

2SK3749(91)-T1-A

SMALL SIGNAL FET

Renesas Electronics Corporation

87,000 -
2SK3749(91)-T1-A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FDG312P

FDG312P

MOSFET P-CH 20V 1.2A SC88

Fairchild Semiconductor

82,077 -
FDG312P

数据表

PowerTrench® 6-TSSOP, SC-88, SOT-363 Bulk Active P-Channel MOSFET (Metal Oxide) 20 V 1.2A (Ta) 2.5V, 4.5V 180mOhm @ 1.2A, 4.5V 1.5V @ 250µA 5 nC @ 4.5 V ±8V 330 pF @ 10 V - 750mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SC-88 (SC-70-6)
NDS335N

NDS335N

MOSFET N-CH 20V 1.7A SUPERSOT3

Fairchild Semiconductor

64,643 -
NDS335N

数据表

- TO-236-3, SC-59, SOT-23-3 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 20 V 1.7A (Ta) 2.7V, 4.5V 110mOhm @ 1.7A, 4.5V 1V @ 250µA 9 nC @ 4.5 V 8V 240 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
CPH6603-TL-E

CPH6603-TL-E

P-CHANNEL SILICON MOSFET

onsemi

60,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
2SK3378ENTL-E

2SK3378ENTL-E

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics Corporation

57,699 -
2SK3378ENTL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
2SJ463A(91)-T1-A

2SJ463A(91)-T1-A

SMALL SIGNAL P-CHANNEL MOSFET

Renesas Electronics Corporation

57,000 -
2SJ463A(91)-T1-A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
IRFS614B

IRFS614B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

46,499 -
IRFS614B

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 250 V 2.8A (Tj) 10V 2Ohm @ 1.4A, 10V 4V @ 250µA 10.5 nC @ 10 V ±30V 275 pF @ 25 V - 22W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
NTD85N02RT4

NTD85N02RT4

MOSFET N-CH 24V 12A/85A DPAK

onsemi

5,419 -
NTD85N02RT4

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 24 V 12A (Ta), 85A (Tc) 4.5V, 10V 5.2mOhm @ 20A, 10V 2V @ 250µA 17.7 nC @ 5 V ±20V 2050 pF @ 20 V - 1.25W (Ta), 78.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
FDN363N

FDN363N

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

42,602 -
FDN363N

数据表

PowerTrench® TO-236-3, SC-59, SOT-23-3 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 1A (Tc) 6V, 10V 240mOhm @ 1A, 10V 4V @ 250µA 5.2 nC @ 10 V ±20V 200 pF @ 25 V - 500mW (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-3
NTD85N02R-001

NTD85N02R-001

MOSFET N-CH 24V 12A/85A IPAK

onsemi

5,748 -
NTD85N02R-001

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 24 V 12A (Ta), 85A (Tc) 4.5V, 10V 5.2mOhm @ 20A, 10V 2V @ 250µA 17.7 nC @ 5 V ±20V 2050 pF @ 20 V - 1.25W (Ta), 78.1W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
2SJ463A(0)-T1-AT

2SJ463A(0)-T1-AT

SMALL SIGNAL P-CHANNEL MOSFET

Renesas Electronics Corporation

36,000 -
2SJ463A(0)-T1-AT

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
IRF710B

IRF710B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

29,593 -
IRF710B

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.4Ohm @ 1A, 10V 4V @ 250µA 10 nC @ 10 V ±30V 330 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
NTMS4800NR2G

NTMS4800NR2G

MOSFET N-CH 30V 4.9A 8SOIC

onsemi

2,483 -
NTMS4800NR2G

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 4.9A (Ta) 4.5V, 10V 20mOhm @ 7.5A, 10V 3V @ 250µA 7.7 nC @ 4.5 V ±20V 940 pF @ 25 V - 750mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
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