场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
SFR9014TF

SFR9014TF

MOSFET P-CH 60V 5.3A DPAK

Fairchild Semiconductor

2,000 -
SFR9014TF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete P-Channel MOSFET (Metal Oxide) 60 V 5.3A (Tc) 10V 500mOhm @ 2.7A, 10V 4V @ 250µA 11 nC @ 10 V ±30V 350 pF @ 25 V - 2.5W (Ta), 24W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
NTHS4111PT1G

NTHS4111PT1G

MOSFET P-CH 30V 3.3A CHIPFET

onsemi

9,406 -
NTHS4111PT1G

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 30 V 3.3A (Ta) 4.5V, 10V 45mOhm @ 4.4A, 10V 3V @ 250µA 28 nC @ 10 V ±20V 1500 pF @ 24 V - 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount ChipFET™
IPS060N03LGAKMA1

IPS060N03LGAKMA1

MOSFET N-CH 30V 50A TO251-3

Infineon Technologies

9,479 -
IPS060N03LGAKMA1

数据表

OptiMOS™ TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 6mOhm @ 30A, 10V 2.2V @ 250µA 23 nC @ 10 V ±20V 2400 pF @ 15 V - 56W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO251-3-11
IRLS620A

IRLS620A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

1,494 -
IRLS620A

数据表

- TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 4.1A (Tc) 5V 800mOhm @ 2.05A, 5V 2V @ 250µA 15 nC @ 5 V ±20V 430 pF @ 25 V - 26W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
EFC4601R-M-TR

EFC4601R-M-TR

NCH 2.5V DRIVE SERIES

onsemi

8,155,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
NTD4906N-35G

NTD4906N-35G

MOSFET N-CH 30V 10.3A/54A IPAK

onsemi

9,177 -
NTD4906N-35G

数据表

- TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10.3A (Ta), 54A (Tc) 4.5V, 10V 5.5mOhm @ 30A, 10V 2.2V @ 250µA 24 nC @ 10 V ±20V 1932 pF @ 15 V - 1.38W (Ta), 37.5W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
EFC4612R-TR

EFC4612R-TR

MOSFET N-CH 24V 6A EFCP

onsemi

7,449 -

-

- 4-XFBGA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 24 V 6A (Ta) - 45mOhm @ 3A, 4.5V 1.3V @ 1mA 7 nC @ 4.5 V ±12V - - 1.6W (Ta) 150°C (TJ) - - Surface Mount EFCP1313-4CC-037
NTD40N03R-1G

NTD40N03R-1G

MOSFET N-CH 25V 7.8A/32A IPAK

onsemi

7,712 -
NTD40N03R-1G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 7.8A (Ta), 32A (Tc) 4.5V, 10V 16.5mOhm @ 10A, 10V 2V @ 250µA 5.78 nC @ 4.5 V ±20V 584 pF @ 20 V - 1.5W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
FDC608PZ-F171

FDC608PZ-F171

-20V P-CHANNEL 2.5V POWERTRENCH

onsemi

345,222 -
FDC608PZ-F171

数据表

- SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.8A (Ta) 2.5V, 4.5V 30mOhm @ 5.8A, 4.5V 1.5V @ 250µA 23 nC @ 4.5 V ±12V 1330 pF @ 10 V - 800mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
NTLJS3113PT1G

NTLJS3113PT1G

MOSFET P-CH 20V 3.5A 6WDFN

onsemi

6,217 -
NTLJS3113PT1G

数据表

µCool™ 6-WDFN Exposed Pad Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 1.5V, 4.5V 40mOhm @ 3A, 4.5V 1V @ 250µA 15.7 nC @ 4.5 V ±8V 1329 pF @ 16 V - 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-WDFN (2x2)
2SK3491-TL-E

2SK3491-TL-E

NCH 4V DRIVE SERIES

onsemi

250,600 -
2SK3491-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
CPH5821-TL-E

CPH5821-TL-E

PCH+SBD 4V DRIVE SERIES

onsemi

228,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
NTMS4872NR2G

NTMS4872NR2G

MOSFET N-CH 30V 6A/10.2A 8SOIC

onsemi

5,948 -
NTMS4872NR2G

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6A (Ta), 10.2A (Tc) 4.5V, 10V 13.5mOhm @ 10.2A, 10V 2.5V @ 250µA 15 nC @ 4.5 V ±20V 1700 pF @ 15 V - 820mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
NTD4809NAT4G

NTD4809NAT4G

MOSFET N-CH 30V 9.6A/58A DPAK

onsemi

9,088 -
NTD4809NAT4G

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.6A (Ta), 58A (Tc) 4.5V, 11.5V 9mOhm @ 30A, 10V 2.5V @ 250µA 13 nC @ 4.5 V ±20V 1456 pF @ 12 V - 1.3W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
NTLUF4189NZTBG

NTLUF4189NZTBG

MOSFET N-CH 30V 1.2A 6UDFN

onsemi

9,598 -
NTLUF4189NZTBG

数据表

- 6-UFDFN Exposed Pad Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 1.2A (Ta) 2.5V, 4.5V 200mOhm @ 1.5A, 4.5V 1.5V @ 250µA 3 nC @ 4.5 V ±8V 95 pF @ 15 V Schottky Diode (Isolated) 500mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-UDFN (1.6x1.6)
NTD65N03RT4G

NTD65N03RT4G

MOSFET N-CH 25V 9.5A/32A DPAK

onsemi

2,728 -
NTD65N03RT4G

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 9.5A (Ta), 32A (Tc) 4.5V, 10V 8.4mOhm @ 30A, 10V 2V @ 250µA 16 nC @ 5 V ±20V 1400 pF @ 20 V - 1.3W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
NTD4404N1

NTD4404N1

N-CHANNEL POWER MOSFET

onsemi

121,490 -
NTD4404N1

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NTD3813NT4G

NTD3813NT4G

MOSFET N-CH 16V 9.6A/51A DPAK

onsemi

6,847 -
NTD3813NT4G

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 16 V 9.6A (Ta), 51A (Tc) 4.5V, 10V 8.75mOhm @ 15A, 10V 2.5V @ 250µA 12.8 nC @ 4.5 V ±16V 963 pF @ 12 V - 1.2W (Ta), 34.9W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
MMDF4N01HDR2

MMDF4N01HDR2

N-CHANNEL POWER MOSFET

onsemi

117,500 -
MMDF4N01HDR2

数据表

* - Bulk Obsolete - - - - - - - - - - - - - - - - -
2SJ646-TL-E

2SJ646-TL-E

P-CHANNEL SILICON MOSFET

onsemi

67,342 -
2SJ646-TL-E

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active P-Channel MOSFET (Metal Oxide) 30 V 8A 4V, 10V 75mOhm @ 4A, 10V 2.6V @ 1mA 11 nC @ 10 V ±20V 510 pF @ 10 V - 1W (Ta), 15W (Tc) 150°C - - Through Hole TP
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