场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

全部重置
全部应用
结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
NTD4860N-1G

NTD4860N-1G

MOSFET N-CH 25V 10.4A/65A IPAK

onsemi

2,016 -
NTD4860N-1G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 10.4A (Ta), 65A (Tc) 4.5V, 10V 7.5mOhm @ 30A, 10V 2.5V @ 250µA 16.5 nC @ 4.5 V ±20V 1308 pF @ 12 V - 1.28W (Ta), 50W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
NDD01N60-1G

NDD01N60-1G

MOSFET N-CH 600V 1.5A IPAK

onsemi

4,199 -
NDD01N60-1G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.5A (Tc) 10V 8.5Ohm @ 200mA, 10V 3.7V @ 50µA 7.2 nC @ 10 V ±30V 160 pF @ 25 V - 46W (Tc) -55°C ~ 150°C (TJ) - - Through Hole IPAK
2SJ646-E

2SJ646-E

PCH 4V DRIVE SERIES

onsemi

7,975 -
2SJ646-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
HUFA75307D3S

HUFA75307D3S

MOSFET N-CH 55V 15A TO252AA

Fairchild Semiconductor

7,254 -
HUFA75307D3S

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 15A (Tc) 10V 90mOhm @ 15A, 10V 4V @ 250µA 20 nC @ 20 V ±20V 250 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
NTD60N03

NTD60N03

N-CHANNEL POWER MOSFET

onsemi

7,203 -
NTD60N03

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
MMSF10N03ZR2

MMSF10N03ZR2

SMALL SIGNAL N-CHANNEL MOSFET

onsemi

5,664 -
MMSF10N03ZR2

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
GS2N7002KW

GS2N7002KW

MOSFET, N-CH, SINGLE, 0.34A, 60V

Good-Ark Semiconductor

5,385 -
GS2N7002KW

数据表

- SC-70, SOT-323 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 340mA (Ta) 4.5V, 10V 2.5Ohm @ 300mA, 10V 2.5V @ 250µA 2.4 nC @ 10 V ±20V 18 pF @ 30 V - 350mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-323
NTD4404NT4G

NTD4404NT4G

N-CHANNEL POWER MOSFET

onsemi

5,000 -
NTD4404NT4G

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
2SK3487-TD-E

2SK3487-TD-E

NCH 2.5V DRIVE SERIES

onsemi

4,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
2SK583

2SK583

N-CHANNEL SMALL SIGNAL MOSFET

onsemi

3,000 -
2SK583

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
CPH6443-P-TL-H

CPH6443-P-TL-H

N-CHANNEL MOSFET

Sanyo

3,000 -
CPH6443-P-TL-H

数据表

- SOT-23-6 Thin, TSOT-23-6 Bulk Active - - - 6A (Tj) - - - - - - - - 150°C (TJ) - - Surface Mount 6-CPH
G500P03IE

G500P03IE

MOSFET P-CH ESD 30V 4.6A SOT-23

Goford Semiconductor

3,000 -
G500P03IE

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 30 V 4.6A (Tc) 2.5V, 4.5V, 10V 55mOhm @ 4A, 10V 1.3V @ 250µA 13 nC @ 10 V ±12V 680 pF @ 15 V - 1.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
IRLML2246TR

IRLML2246TR

MOSFET P-CH 20V 2.6A SOT23

UMW

3,000 -
IRLML2246TR

数据表

* TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 2.6A (Ta) 2.5V, 4.5V 135mOhm @ 2.6A, 4.5V 1.1V @ 10µA - ±12V - - 1.3W (Ta) -55°C ~ 155°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
IRLML6302TR

IRLML6302TR

MOSFET P-CH 20V 780MA SOT23

UMW

3,000 -
IRLML6302TR

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
BS170FTA

BS170FTA

MOSFET N-CH 60V 0.15MA SOT23

UMW

3,000 -
BS170FTA

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
NTD78N03R-001

NTD78N03R-001

N-CHANNEL POWER MOSFET

onsemi

2,775 -
NTD78N03R-001

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NTD78N03R-035

NTD78N03R-035

N-CHANNEL POWER MOSFET

onsemi

2,700 -
NTD78N03R-035

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NTD78N03R-35G

NTD78N03R-35G

N-CHANNEL POWER MOSFET

onsemi

2,625 -
NTD78N03R-35G

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NTMSD3P303R2

NTMSD3P303R2

MOSFET/DIODE SCHOTTKY P-CH 8SOIC

onsemi

2,324 -
NTMSD3P303R2

数据表

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
PMXB65ENE,147

PMXB65ENE,147

NOW NEXPERIA PMXB65ENE - SMALL S

NXP USA Inc.

2,082 -
PMXB65ENE,147

数据表

- 3-XDFN Exposed Pad Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 3.2A (Ta) 4.5V, 10V 67mOhm @ 3.2A, 10V 2.5V @ 250µA 11 nC @ 10 V ±20V 295 pF @ 15 V - 400mW (Ta), 8.33W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DFN1010D-3
深圳市宝利科技有限公司

搜索

深圳市宝利科技有限公司

产品

深圳市宝利科技有限公司

电话

深圳市宝利科技有限公司

用户