场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
CPH6434-TL-E

CPH6434-TL-E

N-CHANNEL SILICON MOSFET

Sanyo

2,982 -

-

- SOT-23-6 Thin, TSOT-23-6 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) - 41mOhm @ 3A, 4V - 7 nC @ 4 V - 790 pF @ 10 V - 1.6W (Ta) 150°C (TJ) - - Surface Mount 6-CPH
NTD4856NT4G

NTD4856NT4G

MOSFET N-CH 25V 13.3A/89A DPAK

onsemi

2,843 -
NTD4856NT4G

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 13.3A (Ta), 89A (Tc) 4.5V, 10V 4.7mOhm @ 30A, 10V 2.5V @ 250µA 27 nC @ 4.5 V ±20V 2241 pF @ 12 V - 1.33W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
HUF75337P3

HUF75337P3

MOSFET N-CH 55V 75A TO220-3

Harris Corporation

2,600 -
HUF75337P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) - 14mOhm @ 75A, 10V 4V @ 250µA 109 nC @ 20 V ±20V 1775 pF @ 25 V - 175W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
RFP2NO8L

RFP2NO8L

2A, 80V, 1.05OHM, N CHANNEL MOSF

Harris Corporation

1,609 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
IPS050N03LG

IPS050N03LG

N-CHANNEL POWER MOSFET

Infineon Technologies

1,500 -
IPS050N03LG

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 5mOhm @ 30A, 10V 2.2V @ 250µA 31 nC @ 10 V ±20V 3200 pF @ 15 V - 68W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
HUF76013D3S

HUF76013D3S

MOSFET N-CH 20V 20A TO252AA

Fairchild Semiconductor

1,212 -
HUF76013D3S

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 20 V 20A (Tc) 5V, 10V 22mOhm @ 20A, 10V 3V @ 250µA 17 nC @ 10 V ±20V 624 pF @ 20 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
G12P10TE

G12P10TE

MOSFET P-CH ESD 100V 12A 44.6W T

Goford Semiconductor

3,000 -
G12P10TE

数据表

TrenchFET® TO-220-3 Tube Active P-Channel MOSFET (Metal Oxide) - 12A (Tc) 10V 200mOhm @ 6A, 10V 3V @ 250µA - ±20V - - 40W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
630A

630A

MOSFET N-CH 200V 11A TO-252

Goford Semiconductor

60,000 -
630A

数据表

TrenchFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) - 11A (Tc) 10V 280mOhm @ 4.5A, 10V 3V @ 250µA - ±20V - - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252
2SJ670-TD-E

2SJ670-TD-E

P-CHANNEL SILICON MOSFET

onsemi

974,000 -
2SJ670-TD-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
CPH3431-TL-E

CPH3431-TL-E

N-CHANNEL SILICON MOSFET

onsemi

564,000 -
CPH3431-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NTNS3A91PZT5G

NTNS3A91PZT5G

MOSFET P-CH 20V 223MA 3XLLGA

onsemi

5,592 -
NTNS3A91PZT5G

数据表

- 3-XFLGA Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 223mA (Ta) 1.5V, 4.5V 1.6Ohm @ 100mA, 4.5V 1V @ 250µA 1.1 nC @ 4.5 V ±8V 41 pF @ 15 V - 121mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 3-XLLGA (0.62x0.62)
SFR9214TM

SFR9214TM

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

412,282 -
SFR9214TM

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active P-Channel MOSFET (Metal Oxide) 250 V 1.53A (Tc) 10V 4Ohm @ 770mA, 10V 4V @ 250µA 11 nC @ 10 V ±30V 295 pF @ 25 V - 2.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
CPH3413-TL-E

CPH3413-TL-E

N-CHANNEL SILICON MOSFET

onsemi

357,000 -
CPH3413-TL-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NTD78N03T4G

NTD78N03T4G

MOSFET N-CH 25V 11.4A/78A DPAK

onsemi

9,429 -
NTD78N03T4G

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 11.4A (Ta), 78A (Tc) 4.5V, 10V 6mOhm @ 78A, 10V 3V @ 250µA 35 nC @ 4.5 V ±20V 2250 pF @ 12 V - 1.4W (Ta), 64W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
IRFR210BTF

IRFR210BTF

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

218,000 -
IRFR210BTF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 200 V 2.7A (Tc) 10V 1.5Ohm @ 1.35A, 10V 4V @ 250µA 9.3 nC @ 10 V ±30V 225 pF @ 25 V - 2.5W (Ta), 26W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
NTTFS4823NTAG

NTTFS4823NTAG

MOSFET N-CH 30V 7.1A/50A 8WDFN

onsemi

4,372 -
NTTFS4823NTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7.1A (Ta), 50A (Tc) 4.5V, 11.5V 10.5mOhm @ 20A, 10V 2.5V @ 250µA 9 nC @ 4.5 V ±20V 1013 pF @ 12 V - 660mW (Ta), 32.9W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-WDFN (3.3x3.3)
NTD78N03-35G

NTD78N03-35G

MOSFET N-CH 25V 11.4A/78A IPAK

onsemi

7,573 -
NTD78N03-35G

数据表

- TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 11.4A (Ta), 78A (Tc) 4.5V, 10V 6mOhm @ 78A, 10V 3V @ 250µA 35 nC @ 4.5 V ±20V 2250 pF @ 12 V - 1.4W (Ta), 64W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
2SK3230C-T1-A

2SK3230C-T1-A

N-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics Corporation

198,000 -
2SK3230C-T1-A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
2SK3230B-T1-A

2SK3230B-T1-A

N-CHANNEL SMALL SIGNAL MOSFET

Renesas Electronics Corporation

126,000 -
2SK3230B-T1-A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
2SK3230-T1-A

2SK3230-T1-A

SMALL SIGNAL FET

Renesas Electronics Corporation

120,000 -
2SK3230-T1-A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
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