场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
HUF75307T3ST136

HUF75307T3ST136

13A, 55V, 0.090 OHM, N CHANNEL,

Harris Corporation

3,263 -
HUF75307T3ST136

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
NTMFS4C08NT1G-001

NTMFS4C08NT1G-001

MOSFET N-CH 30V 9A/52A 5DFN

onsemi

5,540 -
NTMFS4C08NT1G-001

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 52A (Tc) 4.5V, 10V 5.8mOhm @ 18A, 10V 2.1V @ 250µA 18.2 nC @ 10 V ±20V 1670 pF @ 15 V - 760mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
SI2317A

SI2317A

MOSFET P-CH 20V 4.2A SOT23

UMW

3,000 -
SI2317A

数据表

* TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 20 V 4.2A (Ta) 2.5V, 4.5V 40mOhm @ 4.2A, 4.5V - - ±12V - - 1.38W (Ta) -55°C ~ 155°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
SI2309A

SI2309A

MOSFET P-CH 60V 1.25A SOT23

UMW

3,000 -
SI2309A

数据表

* TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 60 V 1.25A (Ta) 4.5V, 10V 340mOhm @ 1.25A, 10V 3V @ 250µA - ±20V - - 1.25W (Ta) -55°C ~ 155°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
FDN336P

FDN336P

MOSFET P-CH 20V 1.3A SOT23

UMW

3,000 -
FDN336P

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
FDN359AN

FDN359AN

MOSFET N-CH 30V 2.7A SOT23

UMW

3,000 -
FDN359AN

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
FDN5630

FDN5630

MOSFET N-CH 60V 4A SOT23

UMW

3,000 -
FDN5630

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
FDN308P

FDN308P

MOSFET P-CH 20V 1.5A SOT23

UMW

3,000 -
FDN308P

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
FDN306P

FDN306P

MOSFET P-CH 12V 2.6A SOT23

UMW

3,000 -
FDN306P

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
FDN302P

FDN302P

MOSFET P-CH 20V 2.4A SOT23

UMW

3,000 -
FDN302P

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
FDN352AP

FDN352AP

MOSFET P-CH 30V 1.3A SOT23

UMW

2,940 -
FDN352AP

数据表

* - Cut Tape (CT) Active - - - - - - - - - - - - - - - - -
2301H

2301H

P30V,RD(MAX)<130M@-4.5V,RD(MAX)<

Goford Semiconductor

2,771 -
2301H

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 2.8A (Tc) 4.5V, 10V 75mOhm @ 3A, 10V 2.4V @ 250µA 4.5 nC @ 2.5 V ±20V 366 pF @ 15 V - 890mW (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
MMSF3350R2

MMSF3350R2

N-CHANNEL POWER MOSFET

onsemi

2,372 -
MMSF3350R2

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
RQK0204TGDQAWS#H6

RQK0204TGDQAWS#H6

P CH MOS FET POWER SWITCHING

Renesas Electronics Corporation

1,995 -
RQK0204TGDQAWS#H6

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
IPS65R1K0CEAKMA1

IPS65R1K0CEAKMA1

MOSFET N-CH 650V 4.3A TO251

Infineon Technologies

7,426 -
IPS65R1K0CEAKMA1

数据表

CoolMOS™ CE TO-251-3 Stub Leads, IPAK Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 650 V 4.3A (Tc) 10V 1Ohm @ 1.5A, 10V 3.5V @ 200µA 15.3 nC @ 10 V ±20V 328 pF @ 100 V - 37W (Tc) -40°C ~ 150°C (TJ) - - Through Hole TO-251
IRF512S2532

IRF512S2532

4.9A, 100V, 0.74 OHM, N-CHANNEL

Harris Corporation

1,200 -
IRF512S2532

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FDMA905P-SN00294

FDMA905P-SN00294

MOSFET P-CH 12V 10A

onsemi

2,510 -

-

- - Bulk Obsolete - - - - - - - - - - - - - - - - -
NTMFS4839NT1G

NTMFS4839NT1G

MOSFET N-CH 30V 9.5A/64A 5DFN

onsemi

4,274 -
NTMFS4839NT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.5A (Ta), 64A (Tc) 4.5V, 11.5V 5.5mOhm @ 30A, 10V 2.5V @ 250µA 18 nC @ 4.5 V ±20V 1588 pF @ 12 V - 870mW (Ta), 41.7W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
IRFR430BTM

IRFR430BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

207,739 -
IRFR430BTM

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 3.5A (Tc) 10V 1.5Ohm @ 1.75A, 10V 4V @ 250µA 33 nC @ 10 V ±30V 1050 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
NDT01N60T1G

NDT01N60T1G

MOSFET N-CH 600V 400MA SOT223

onsemi

3,837 -
NDT01N60T1G

数据表

- TO-261-4, TO-261AA Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 600 V 400mA (Tc) 10V 8.5Ohm @ 200mA, 10V 3.7V @ 50µA 7.2 nC @ 10 V ±30V 160 pF @ 25 V - 2.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223 (TO-261)
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