场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
GSFN3110

GSFN3110

MOSFET, N-CH, SINGLE, 50.00A, 30

Good-Ark Semiconductor

9,876 -
GSFN3110

数据表

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) 4.5V, 10V 10mOhm @ 11A, 10V 2.5V @ 250µA 14 nC @ 4.5 V ±20V 1700 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PPAK (3.1x3.05)
HUFA76423D3ST

HUFA76423D3ST

MOSFET N-CH 60V 20A TO252AA

Fairchild Semiconductor

8,598 -
HUFA76423D3ST

数据表

UltraFET™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 32mOhm @ 20A, 10V 3V @ 250µA 34 nC @ 10 V ±16V 1060 pF @ 25 V - 85W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
IPP60R1K4C6XKSA1

IPP60R1K4C6XKSA1

MOSFET N-CH 600V 3.2A TO220-3

Infineon Technologies

9,914 -
IPP60R1K4C6XKSA1

数据表

CoolMOS™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) 10V 1.4Ohm @ 1.1A, 10V 3.5V @ 90µA 1.1 nC @ 10 V ±20V 200 pF @ 100 V - 28.4W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3
2SK2631-E

2SK2631-E

MOSFET

Sanyo

7,000 -
2SK2631-E

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
PSMN085-150K,518

PSMN085-150K,518

NEXPERIA PSMN085-150K - 3.5A, 15

NXP Semiconductors

6,398 -
PSMN085-150K,518

数据表

TrenchMOS™ 8-SOIC (0.154", 3.90mm Width) Bulk Active N-Channel MOSFET (Metal Oxide) 150 V 3.5A (Tc) 10V 85mOhm @ 3.5A, 10V 4V @ 1mA 40 nC @ 10 V ±20V 1310 pF @ 25 V - 3.5W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
NTLJS3A18PZTWG

NTLJS3A18PZTWG

MOSFET P-CH 20V 5A 6WDFN

onsemi

9,567 -
NTLJS3A18PZTWG

数据表

- 6-WDFN Exposed Pad Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) 1.5V, 4.5V 18mOhm @ 7A, 4.5V 1V @ 250µA 28 nC @ 4.5 V ±8V 2240 pF @ 15 V - 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-WDFN (2x2)
NVMFS5885NLT1G

NVMFS5885NLT1G

MOSFET N-CH 60V 10.2A 5DFN

onsemi

8,091 -
NVMFS5885NLT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10.2A (Ta) 4.5V, 10V 15mOhm @ 15A, 10V 2.5V @ 250µA 21 nC @ 10 V ±20V 1340 pF @ 25 V - 3.7W (Ta), 54W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
SFP2955

SFP2955

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

5,794 -
SFP2955

数据表

- TO-220-3 Bulk Active P-Channel MOSFET (Metal Oxide) 60 V 9.4A (Tc) 10V 300mOhm @ 4.7A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 600 pF @ 25 V - 49W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
NTMFS4744NT3G

NTMFS4744NT3G

MOSFET N-CH 30V 7A 5DFN

onsemi

9,754 -
NTMFS4744NT3G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4.5V, 11.5V 7.6mOhm @ 30A, 10V 2.5V @ 250µA 17 nC @ 4.5 V ±20V 1300 pF @ 12 V - 880mW (Ta), 47.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
IRFH7936TRPBF

IRFH7936TRPBF

IRFH7936 - N-CHANNEL

International Rectifier

4,530 -
IRFH7936TRPBF

数据表

HEXFET® 8-PowerTDFN Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Ta), 54A (Tc) 4.5V, 10V 4.8mOhm @ 20A, 10V 2.35V @ 50µA 26 nC @ 4.5 V ±20V 2360 pF @ 15 V - 3.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
SFS9614

SFS9614

P-CHANNEL POWER MOSFET

Fairchild Semiconductor

4,236 -
SFS9614

数据表

- TO-220-3 Full Pack Bulk Active P-Channel MOSFET (Metal Oxide) 250 V 1.27A (Tc) 10V 4Ohm @ 600mA, 10V 4V @ 250µA 11 nC @ 10 V ±30V 295 pF @ 25 V - 13W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220F
BUK7575-55A,127

BUK7575-55A,127

NEXPERIA BUK7575 - N-CHANNEL MO

NXP Semiconductors

4,013 -
BUK7575-55A,127

数据表

TrenchMOS™ TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 55 V 20.3A (Tc) 10V 75mOhm @ 10A, 10V 4V @ 1mA - ±20V 483 pF @ 25 V - 62W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220AB
NTQD4154ZR2G

NTQD4154ZR2G

N-CHANNEL POWER MOSFET

onsemi

4,000 -
NTQD4154ZR2G

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
2302

2302

MOSFET N-CH 20V 4.3A SOT-23

Goford Semiconductor

3,197 -
2302

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 20 V 4.3A (Tc) 2.5V, 4.5V 27mOhm @ 2.2A, 4.5V 1.1V @ 250µA 4 nC @ 4.5 V ±10V 356 pF @ 10 V - 1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
FQD4N50TM

FQD4N50TM

MOSFET N-CH 500V 2.6A DPAK

Fairchild Semiconductor

3,035 -
FQD4N50TM

数据表

QFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.6A (Tc) 10V 2.7Ohm @ 1.3A, 10V 5V @ 250µA 13 nC @ 10 V ±30V 460 pF @ 25 V - 2.5W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
IRLML0060TR

IRLML0060TR

MOSFET N-CH 60V 2.7A SOT23

UMW

3,000 -
IRLML0060TR

数据表

* TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 2.7A (Ta) 4.5V, 10V 92mOhm @ 2.7A, 10V 2.5V @ 25µA - ±16V - - 1.25W (Ta) -55°C ~ 155°C (TJ) - - Surface Mount SOT-23-3 (TO-236)
FDN360P

FDN360P

MOSFET P-CH 30V 2A SOT23

UMW

3,000 -
FDN360P

数据表

* - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IRLML5103TR

IRLML5103TR

MOSFET P-CH 30V 760MA SOT23

UMW

2,990 -
IRLML5103TR

数据表

* - Cut Tape (CT) Active - - - - - - - - - - - - - - - - -
G3035L

G3035L

P30V,RD(MAX)<59M@-10V,RD(MAX)<75

Goford Semiconductor

2,755 -
G3035L

数据表

TrenchFET® TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 4.1A (Ta) 4.5V, 10V 59mOhm @ 2.1A, 10V 2V @ 250µA 12.5 nC @ 10 V ±20V 650 pF @ 15 V - 1.4W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-3
IRF523

IRF523

N-CHANNEL POWER MOSFET

Harris Corporation

2,608 -
IRF523

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 80 V 8A (Tc) 10V 360mOhm @ 5.6A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 350 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220
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