场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
FDD8586

FDD8586

MOSFET N-CH 20V 35A TO252AA

Fairchild Semiconductor

70,000 -
FDD8586

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 20 V 35A (Tc) 4.5V, 10V 5.5mOhm @ 35A, 10V 2.5V @ 250µA 48 nC @ 10 V ±20V 2480 pF @ 10 V - 77W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
ISL9N315AD3ST

ISL9N315AD3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

68,479 -
ISL9N315AD3ST

数据表

UltraFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 15mOhm @ 30A, 10V 3V @ 250µA 28 nC @ 10 V ±20V 900 pF @ 15 V - 55W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
NTTFS4C53NTAG

NTTFS4C53NTAG

MOSFET N-CH 30V 35A 8WDFN

onsemi

46,500 -

-

- 8-PowerWDFN Bulk Obsolete - - - - - - - - - - - - - - - Surface Mount 8-WDFN (3.3x3.3)
SPD04N60C2

SPD04N60C2

N-CHANNEL POWER MOSFET

Infineon Technologies

45,850 -
SPD04N60C2

数据表

CoolMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 5.5V @ 200µA 22.9 nC @ 10 V ±20V 580 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO252-3-1
FDS4410

FDS4410

MOSFET N-CH 30V 10A 8SOIC

Fairchild Semiconductor

39,200 -
FDS4410

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 10A (Ta) 4.5V, 10V 13.5mOhm @ 10A, 10V 3V @ 250µA 31 nC @ 10 V ±20V 1340 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
NTLUS3A39PZCTAG

NTLUS3A39PZCTAG

MOSFET P-CH 20V 3.4A 6UDFN

onsemi

9,385 -
NTLUS3A39PZCTAG

数据表

µCool™ 6-PowerUFDFN Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3.4A (Ta) 1.5V, 4.5V 39mOhm @ 4A, 4.5V 1V @ 250µA 10.4 nC @ 4.5 V ±8V 920 pF @ 15 V - 600mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-UDFN (1.6x1.6)
IPU60R1K4C6BKMA1

IPU60R1K4C6BKMA1

MOSFET N-CH 600V 3.2A TO251-3

Infineon Technologies

27,000 -
IPU60R1K4C6BKMA1

数据表

CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Bulk Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) 10V 1.4Ohm @ 1.1A, 10V 3.5V @ 90µA 9.4 nC @ 10 V ±20V 200 pF @ 100 V - 28.4W (Tc) -55°C ~ 155°C (TJ) - - Through Hole PG-TO251-3
NTLJS3A18PZTXG

NTLJS3A18PZTXG

MOSFET P-CH 20V 5A 6WDFN

onsemi

2,621 -
NTLJS3A18PZTXG

数据表

- 6-WDFN Exposed Pad Tape & Reel (TR) Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5A (Ta) 1.5V, 4.5V 18mOhm @ 7A, 4.5V 1V @ 250µA 28 nC @ 4.5 V ±8V 2240 pF @ 15 V - 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-WDFN (2x2)
NTMFS4926NET1G

NTMFS4926NET1G

MOSFET N-CH 30V 9A/44A 5DFN

Sanyo

25,500 -
NTMFS4926NET1G

数据表

- 8-PowerTDFN, 5 Leads Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 44A (Tc) - 7mOhm @ 30A, 10V 2.2V @ 250µA 17.3 nC @ 10 V ±20V 1004 pF @ 15 V - 920mW (Ta), 21.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
HUFA76407P3

HUFA76407P3

MOSFET N-CH 60V 13A TO220-3

Fairchild Semiconductor

23,898 -
HUFA76407P3

数据表

UltraFET™ TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 13A (Tc) 4.5V, 10V 92mOhm @ 13A, 10V 3V @ 250µA 11.3 nC @ 10 V ±16V 350 pF @ 25 V - 38W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
FDFMA2P853

FDFMA2P853

MOSFET P-CH 20V 3A 6MICROFET

Fairchild Semiconductor

21,746 -
FDFMA2P853

数据表

PowerTrench® 6-VDFN Exposed Pad Bulk Active P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 1.8V, 4.5V 120mOhm @ 3A, 4.5V 1.3V @ 250µA 6 nC @ 4.5 V ±8V 435 pF @ 10 V Schottky Diode (Isolated) 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-MicroFET (2x2)
SFT1450-H

SFT1450-H

MOSFET N-CH 40V 21A TP

onsemi

6,951 -
SFT1450-H

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Bulk Obsolete N-Channel MOSFET (Metal Oxide) 40 V 21A (Ta) 10V 28mOhm @ 10.5A, 10V - 14.4 nC @ 10 V ±20V 715 pF @ 20 V - 1W (Ta), 23W (Tc) 150°C (TJ) - - Through Hole IPAK/TP
IPU80R1K4CEBKMA1

IPU80R1K4CEBKMA1

MOSFET N-CH 800V 3.9A TO251-3

Infineon Technologies

8,892 -
IPU80R1K4CEBKMA1

数据表

CoolMOS™ TO-251-3 Short Leads, IPAK, TO-251AA Tube Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 800 V 3.9A (Tc) 10V 1.4Ohm @ 2.3A, 10V 3.9V @ 240µA 23 nC @ 10 V ±20V 570 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO251-3
ISL9N315AD3

ISL9N315AD3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

16,032 -
ISL9N315AD3

数据表

UltraFET® TO-251-3 Short Leads, IPAK, TO-251AA Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Tc) 4.5V, 10V 15mOhm @ 30A, 10V 3V @ 250µA 28 nC @ 10 V ±20V 900 pF @ 15 V - 55W (Ta) -55°C ~ 175°C (TJ) - - Through Hole IPAK
NTDV5805NT4G

NTDV5805NT4G

MOSFET N-CH 40V 51A DPAK

onsemi

5,608 -
NTDV5805NT4G

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 40 V 51A (Tc) 5V, 10V 9.5mOhm @ 15A, 10V 3.5V @ 250µA 80 nC @ 10 V ±20V 1725 pF @ 25 V - - - - - Surface Mount DPAK
NTMFS4926NET1G

NTMFS4926NET1G

MOSFET N-CH 30V 9A/44A 5DFN

onsemi

7,365 -
NTMFS4926NET1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 44A (Tc) 4.5V, 10V 7mOhm @ 30A, 10V 2.2V @ 250µA 17.3 nC @ 10 V ±20V 1004 pF @ 15 V - 920mW (Ta), 21.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
2SK4086LS-MG5

2SK4086LS-MG5

MOSFET N-CH

Sanyo

11,995 -
2SK4086LS-MG5

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
IPP096N03LGHKSA1

IPP096N03LGHKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies

11,500 -
IPP096N03LGHKSA1

数据表

OptiMOS™ 3 TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Tc) 4.5V, 10V 9.6mOhm @ 30A, 10V 2.2V @ 250µA 15 nC @ 10 V ±20V 1600 pF @ 15 V - 42W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
IRFH7921TRPBF-IR

IRFH7921TRPBF-IR

IRFH7921 - HEXFET POWER MOSFET

International Rectifier

11,183 -
IRFH7921TRPBF-IR

数据表

HEXFET® 8-PowerVDFN Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 34A (Tc) 4.5V, 10V 8.5mOhm @ 15A, 10V 2.35V @ 25µA 14 nC @ 4.5 V ±20V 1210 pF @ 15 V - 3.1W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount PQFN (5x6) Single Die
NTMFS4935NT1G-IRH1

NTMFS4935NT1G-IRH1

NTMFS4935NT1G-IRH1

onsemi

2,002 -

-

- 8-PowerTDFN, 5 Leads Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 93A (Tc) 4.5V, 10V 3.2mOhm @ 30A, 10V 2.2V @ 250µA 49.4 nC @ 10 V ±20V 4850 pF @ 15 V - 930mW (Ta), 48W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
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