场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
RJK03J5DPA-00#J5A

RJK03J5DPA-00#J5A

N-CHANNEL POWER SWITCHING MOSFET

Renesas Electronics Corporation

264,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
FDD6696

FDD6696

MOSFET N-CH 30V 13A/50A DPAK

Fairchild Semiconductor

217,895 -
FDD6696

数据表

PowerTrench® TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta), 50A (Tc) 4.5V, 10V 8mOhm @ 13A, 10V 3V @ 250µA 24 nC @ 5 V ±16V 1715 pF @ 15 V - 3.8W (Ta), 52W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252 (DPAK)
2SK3412-TL-E

2SK3412-TL-E

NCH 4V DRIVE SERIES

onsemi

198,100 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
FQP9N25

FQP9N25

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

132,000 -
FQP9N25

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 250 V 9.4A (Tc) 10V 420mOhm @ 4.7A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 700 pF @ 25 V - 90W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220
NTMSD6N303R2G

NTMSD6N303R2G

MOSFET N-CH 30V 6A 8SOIC

onsemi

4,159 -
NTMSD6N303R2G

数据表

FETKY™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6A (Ta) 4.5V, 10V 32mOhm @ 6A, 10V 2.5V @ 250µA 30 nC @ 10 V ±20V 950 pF @ 24 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
2SK2111-T2-AZ

2SK2111-T2-AZ

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics Corporation

96,000 -
2SK2111-T2-AZ

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
UPA2591T1H-T1-AT

UPA2591T1H-T1-AT

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

93,000 -
UPA2591T1H-T1-AT

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
FDC021N30

FDC021N30

MOSFET N-CH 30V 6.1A SUPERSOT6

onsemi

2,974 -
FDC021N30

数据表

PowerTrench® SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.1A (Ta) 4.5V, 10V 26mOhm @ 6.1A, 10V 3V @ 250µA 10.8 nC @ 10 V ±20V 710 pF @ 15 V - 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SuperSOT™-6
FDB7030BL

FDB7030BL

60A, 30V, 0.009OHM, N-CHANNEL,

Fairchild Semiconductor

51,983 -
FDB7030BL

数据表

PowerTrench® TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 60A (Ta) 4.5V, 10V 9mOhm @ 30A, 10V 3V @ 250µA 24 nC @ 5 V ±20V 1760 pF @ 15 V - 60W (Tc) -65°C ~ 175°C (TJ) - - Surface Mount TO-263AB
NTD4854NT4G

NTD4854NT4G

MOSFET N-CH 25V 15.7A/128A DPAK

onsemi

8,394 -
NTD4854NT4G

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 25 V 15.7A (Ta), 128A (Tc) 4.5V, 10V 3.6mOhm @ 30A, 10V 2.5V @ 250µA 49.2 nC @ 4.5 V ±20V 4600 pF @ 12 V - 1.43W (Ta), 93.75W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount DPAK
FSS173-TL-E

FSS173-TL-E

PCH 4V DRIVE SERIES

onsemi

51,000 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
FQP13N06L

FQP13N06L

POWER FIELD-EFFECT TRANSISTOR, 1

Fairchild Semiconductor

46,409 -
FQP13N06L

数据表

QFET® TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 60 V 13.6A (Tc) 5V, 10V 110mOhm @ 6.8A, 10V 2.5V @ 250µA 6.4 nC @ 5 V ±20V 350 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
NTD4302G

NTD4302G

MOSFET N-CH 30V 8.4A/68A DPAK

onsemi

7,048 -
NTD4302G

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.4A (Ta), 68A (Tc) 4.5V, 10V 10mOhm @ 20A, 10V 3V @ 250µA 80 nC @ 10 V ±20V 2400 pF @ 24 V - 1.04W (Ta), 75W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
2SK3850-TL-E

2SK3850-TL-E

NCH 10V DRIVE SERIES

onsemi

39,900 -

-

* - Bulk Active - - - - - - - - - - - - - - - - -
NTTFS4932NTAG

NTTFS4932NTAG

MOSFET N-CH 30V 11A/79A 8WDFN

onsemi

8,059 -
NTTFS4932NTAG

数据表

- 8-PowerWDFN Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11A (Ta), 79A (Tc) 4.5V, 10V 4mOhm @ 20A, 10V 2.2V @ 250µA 46.5 nC @ 10 V ±20V 3111 pF @ 15 V - 850mW (Ta), 43W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-WDFN (3.3x3.3)
FDFS2P103

FDFS2P103

MOSFET P-CH 30V 5.3A 8SOIC

Fairchild Semiconductor

29,870 -
FDFS2P103

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete P-Channel MOSFET (Metal Oxide) 30 V 5.3A (Ta) 4.5V, 10V 59mOhm @ 5.3A, 10V 3V @ 250µA 8 nC @ 5 V ±25V 528 pF @ 15 V Schottky Diode (Isolated) 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
IRFI840BTU

IRFI840BTU

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

26,732 -
IRFI840BTU

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 800mOhm @ 4A, 10V 4V @ 250µA 53 nC @ 10 V ±30V 1800 pF @ 25 V - 3.13W (Ta), 134W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262 (I2PAK)
2SK680A-T2-AZ

2SK680A-T2-AZ

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics Corporation

26,350 -
2SK680A-T2-AZ

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
2SK2111-T1-AZ

2SK2111-T1-AZ

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics Corporation

20,932 -
2SK2111-T1-AZ

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
IRF822

IRF822

N-CHANNEL POWER MOSFET

Harris Corporation

20,598 -
IRF822

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 2.2A (Tc) 10V 4Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
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