场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
FQP17N08L

FQP17N08L

MOSFET N-CH 80V 16.5A TO220-3

Fairchild Semiconductor

2,957 -
FQP17N08L

数据表

QFET® TO-220-3 Tube Obsolete N-Channel MOSFET (Metal Oxide) 80 V 16.5A (Tc) 5V, 10V 100mOhm @ 8.25A, 10V 2V @ 250µA 11.5 nC @ 5 V ±20V 520 pF @ 25 V - 65W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
SI2328A

SI2328A

SOT-23 N-CHANNEL POWER MOSFETS R

UMW

2,788 -
SI2328A

数据表

UMW TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 100 V 1.15A (Ta) 4.5V, 10V 245mOhm @ 1.5A, 10V 4V @ 250µA 4 nC @ 10 V ±20V - - 730mW (Ta) 150°C (TJ) - - Surface Mount SOT-23
2SK2111-T1-AY

2SK2111-T1-AY

SMALL SIGNAL N-CHANNEL MOSFET

Renesas Electronics Corporation

2,500 -
2SK2111-T1-AY

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
AO3401A

AO3401A

30V 4.1A 65MR@10V,4.2A 350MW 1.3

UMW

2,393 -
AO3401A

数据表

UMW TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active P-Channel MOSFET (Metal Oxide) 30 V 4.2A (Ta) 2.5V, 10V 50mOhm @ 4.2A, 10V 1.3V @ 250µA 9.4 nC @ 4.5 V ±12V 954 pF @ 15 V - 1.4W (Ta) 150°C (TJ) - - Surface Mount SOT-23
SI6463DQ

SI6463DQ

P-CHANNEL MOSFET

Fairchild Semiconductor

2,350 -
SI6463DQ

数据表

PowerTrench® 8-TSSOP (0.173", 4.40mm Width) Bulk Active P-Channel MOSFET (Metal Oxide) 20 V 8.8A (Ta) 2.5V, 4.5V 12.5mOhm @ 8.8A, 4.5V 1.5V @ 250µA 66 nC @ 4.5 V ±12V 5045 pF @ 10 V - 600mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
G800N06H

G800N06H

N60V, 3A,RD<80M@10V,VTH0.7V~1.2V

Goford Semiconductor

2,325 -
G800N06H

数据表

TrenchFET® TO-261-4, TO-261AA Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 60 V 3A (Tc) 4.5V, 10V 80mOhm @ 3A, 10V 1.2V @ 250µA 6 nC @ 4.5 V ±20V 457 pF @ 30 V - 1.2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount SOT-223
AO3400A

AO3400A

30V 5.8A 35MR@10V,5.8A 1.4W 1.4V

UMW

2,265 -
AO3400A

数据表

UMW TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Active N-Channel MOSFET (Metal Oxide) 30 V 5.8A (Ta) 2.5V, 10V 28mOhm @ 5.8A, 10V 1.4V @ 250µA 12 nC @ 4.5 V ±12V 1050 pF @ 15 V - 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23
SSW2N60BTM

SSW2N60BTM

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2,263 -
SSW2N60BTM

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 5Ohm @ 1A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 490 pF @ 25 V - 3.13W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
HUF76121D3S

HUF76121D3S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

2,192 -
HUF76121D3S

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 30 V 20A (Tc) 4.5V, 10V 23mOhm @ 20A, 10V 3V @ 250µA 30 nC @ 10 V ±20V 850 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
IPD30N06S2L23ATMA1

IPD30N06S2L23ATMA1

MOSFET N-CH 55V 30A TO252-3

Infineon Technologies

8,384 -
IPD30N06S2L23ATMA1

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Discontinued at Digi-Key N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 4.5V, 10V 23mOhm @ 22A, 10V 2V @ 50µA 42 nC @ 10 V ±20V 1091 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
NTD20N06L-001

NTD20N06L-001

MOSFET N-CH 60V 20A IPAK

onsemi

3,261 -
NTD20N06L-001

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Ta) 5V 48mOhm @ 10A, 5V 2V @ 250µA 32 nC @ 5 V ±15V 990 pF @ 25 V - 1.36W (Ta), 60W (Tj) -55°C ~ 175°C (TJ) - - Through Hole IPAK
NTD4854N-1G

NTD4854N-1G

MOSFET N-CH 25V 15.7A/128A IPAK

onsemi

1,800 -
NTD4854N-1G

数据表

- TO-251-3 Short Leads, IPAK, TO-251AA Tube Obsolete N-Channel MOSFET (Metal Oxide) 25 V 15.7A (Ta), 128A (Tc) 4.5V, 10V 3.6mOhm @ 30A, 10V 2.5V @ 250µA 49.2 nC @ 4.5 V ±20V 4600 pF @ 12 V - 1.43W (Ta), 93.75W (Tc) -55°C ~ 175°C (TJ) - - Through Hole IPAK
RFP2N12

RFP2N12

N-CHANNEL, MOSFET

Harris Corporation

1,550 -
RFP2N12

数据表

- TO-220-3 Bulk Active N-Channel MOSFET (Metal Oxide) 120 V 2A (Tc) 10V 1.75Ohm @ 2A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220-3
IPS031N03LGAKMA1

IPS031N03LGAKMA1

LV POWER MOS

Infineon Technologies

5,156 -
IPS031N03LGAKMA1

数据表

OptiMOS™ 3 TO-251-3 Stub Leads, IPAK Tube Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 4.5V, 10V 3.1mOhm @ 30A, 10V 2.2V @ 250µA 51 nC @ 10 V ±20V 5300 pF @ 15 V - 94W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO251-3-11
IRFR422

IRFR422

N-CHANNEL POWER MOSFET

Harris Corporation

1,139 -
IRFR422

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 2.2A (Tc) 10V 4Ohm @ 1.3A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
NTD4909NA-35G

NTD4909NA-35G

MOSFET N-CH 30V 8.8A/41A IPAK

onsemi

5,996 -

-

- TO-251-3 Stub Leads, IPAK Bulk Obsolete N-Channel MOSFET (Metal Oxide) 30 V 8.8A (Ta), 41A (Tc) - 8mOhm @ 30A, 10V 2.2V @ 250µA 17.5 nC @ 10 V - 1314 pF @ 15 V - - - - - Through Hole IPAK
3SK222-T2-A

3SK222-T2-A

N-CHANNEL POWER MOSFET

Renesas Electronics Corporation

195,000 -
3SK222-T2-A

数据表

* - Bulk Active - - - - - - - - - - - - - - - - -
SSI4N60BTU

SSI4N60BTU

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

50,126 -
SSI4N60BTU

数据表

- TO-262-3 Long Leads, I2PAK, TO-262AA Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 4A (Tc) 10V 2.5Ohm @ 2A, 10V 4V @ 250µA 29 nC @ 10 V ±30V 920 pF @ 25 V - 3.13W (Ta), 100W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262 (I2PAK)
IRFR430BTF

IRFR430BTF

N-CHANNEL POWER MOSFET

Fairchild Semiconductor

49,950 -
IRFR430BTF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Bulk Active N-Channel MOSFET (Metal Oxide) 500 V 3.5A (Tc) 10V 1.5Ohm @ 1.75A, 10V 4V @ 250µA 33 nC @ 10 V ±30V 1050 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
HUFA75332S3ST

HUFA75332S3ST

MOSFET N-CH 55V 60A D2PAK

Fairchild Semiconductor

44,255 -
HUFA75332S3ST

数据表

UltraFET™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Bulk Obsolete N-Channel MOSFET (Metal Oxide) 55 V 60A (Tc) 10V 19mOhm @ 60A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 145W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263 (D2PAK)
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