场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
PSMN1R2-30YLDX

PSMN1R2-30YLDX

MOSFET N-CH 30V 100A LFPAK56

Nexperia USA Inc.

118 -
PSMN1R2-30YLDX

数据表

- SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 1.24mOhm @ 25A, 10V 2.2V @ 1mA 68 nC @ 10 V ±20V 4616 pF @ 15 V - 194W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK56, Power-SO8
SIHP15N50E-GE3

SIHP15N50E-GE3

MOSFET N-CH 500V 14.5A TO220AB

Vishay Siliconix

11,356 -
SIHP15N50E-GE3

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 500 V 14.5A (Tc) 10V 280mOhm @ 7.5A, 10V 4V @ 250µA 66 nC @ 10 V ±30V 1162 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
BUK9Y3R0-40E,115

BUK9Y3R0-40E,115

MOSFET N-CH 40V 100A LFPAK56

Nexperia USA Inc.

3,434 -
BUK9Y3R0-40E,115

数据表

TrenchMOS™ SC-100, SOT-669 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 5V 2.5mOhm @ 25A, 10V 2.1V @ 1mA 35.5 nC @ 5 V ±10V 5962 pF @ 25 V - 194W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK56, Power-SO8
DMP4011SPSQ-13

DMP4011SPSQ-13

MOSFET P-CH 40V PWRDI5060

Diodes Incorporated

1,440 -
DMP4011SPSQ-13

数据表

- 8-PowerTDFN Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 11.7A (Ta), 76A (Tc) 4.5V, 10V 11mOhm @ 9.8A, 10V 2.5V @ 250µA 52 nC @ 10 V ±20V 2747 pF @ 20 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount PowerDI5060-8
IPD055N08NF2SATMA1

IPD055N08NF2SATMA1

MOSFET

Infineon Technologies

1,240 -
IPD055N08NF2SATMA1

数据表

StrongIRFET™ 2 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 17A (Ta), 98A (Tc) 6V, 10V 5.5mOhm @ 60A, 10V 3.8V @ 55µA 54 nC @ 10 V ±20V 2500 pF @ 40 V - 3W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3
STF100N6F7

STF100N6F7

MOSFET N-CH 60V 46A TO220FP

STMicroelectronics

750 -
STF100N6F7

数据表

STripFET™ F7 TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 60 V 46A (Tc) 10V 5.6mOhm @ 23A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 1980 pF @ 25 V - 25W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220FP
FDMS86540

FDMS86540

MOSFET N-CH 60V 20A/50A 8PQFN

onsemi

27,443 -
FDMS86540

数据表

PowerTrench® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 20A (Ta), 50A (Tc) 8V, 10V 3.4mOhm @ 20A, 10V 4V @ 250µA 90 nC @ 10 V ±20V 6435 pF @ 30 V - 2.5W (Ta), 96W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
IPD30N08S2L21ATMA1

IPD30N08S2L21ATMA1

MOSFET N-CH 75V 30A TO252-3

Infineon Technologies

19,366 -
IPD30N08S2L21ATMA1

数据表

OptiMOS™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 75 V 30A (Tc) 4.5V, 10V 20.5mOhm @ 25A, 10V 2V @ 80µA 72 nC @ 10 V ±20V 1650 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO252-3-11
SPA06N80C3XKSA1

SPA06N80C3XKSA1

MOSFET N-CH 800V 6A TO220-FP

Infineon Technologies

11,995 -
SPA06N80C3XKSA1

数据表

CoolMOS™ TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 800 V 6A (Tc) 10V 900mOhm @ 3.8A, 10V 3.9V @ 250µA 41 nC @ 10 V ±20V 785 pF @ 100 V - 39W (Tc) -55°C ~ 150°C (TJ) - - Through Hole PG-TO220-3-31
MSJU04N80A-TP

MSJU04N80A-TP

N-CHANNEL MOSFET,DPAK

Micro Commercial Co

4,682 -
MSJU04N80A-TP

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 4.5A 10V 1.3Ohm @ 2.5A, 10V 4.5V @ 250µA 11.5 nC @ 10 V ±20V 396 pF @ 100 V - 88W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
NP60N04VDK-E1-AY

NP60N04VDK-E1-AY

POWER TRS2

Renesas Electronics Corporation

4,426 -
NP60N04VDK-E1-AY

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 60A (Tc) 4.5V, 10V 3.85mOhm @ 30A, 10V 2.5V @ 250µA 63 nC @ 10 V ±20V 3680 pF @ 25 V - 1.2W (Ta), 105W (Tc) 175°C Automotive AEC-Q101 Surface Mount TO-252 (MP-3ZP)
BUK7M3R3-40HX

BUK7M3R3-40HX

MOSFET N-CH 40V 80A LFPAK33

Nexperia USA Inc.

1,584 -
BUK7M3R3-40HX

数据表

- SOT-1210, 8-LFPAK33 (5-Lead) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.3mOhm @ 25A, 10V 3.6V @ 1mA 45 nC @ 10 V +20V, -10V 3037 pF @ 25 V - 101W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount LFPAK33
NTMFS5C628NT1G

NTMFS5C628NT1G

MOSFET N-CH 60V 28A/150A 5DFN

onsemi

1,526 -
NTMFS5C628NT1G

数据表

- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 28A (Ta), 150A (Tc) 10V 3mOhm @ 27A, 10V 4V @ 135µA 34 nC @ 10 V ±20V 2630 pF @ 30 V - 3.7W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 5-DFN (5x6) (8-SOFL)
IRFH5210TRPBF

IRFH5210TRPBF

MOSFET N-CH 100V 10A/55A 8PQFN

Infineon Technologies

8,349 -
IRFH5210TRPBF

数据表

HEXFET® 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Ta), 55A (Tc) 10V 14.9mOhm @ 33A, 10V 4V @ 100µA 59 nC @ 10 V ±20V 2570 pF @ 25 V - 3.6W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (5x6)
IPI086N10N3GXKSA1

IPI086N10N3GXKSA1

MOSFET N-CH 100V 80A TO262-3

Infineon Technologies

242 -
IPI086N10N3GXKSA1

数据表

OptiMOS™ TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 100 V 80A (Tc) 6V, 10V 8.6mOhm @ 73A, 10V 3.5V @ 75µA 55 nC @ 10 V ±20V 3980 pF @ 50 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO262-3
TPH5R906NH,L1Q

TPH5R906NH,L1Q

MOSFET N-CH 60V 28A 8SOP

Toshiba Semiconductor and Storage

24,969 -
TPH5R906NH,L1Q

数据表

U-MOSVIII-H 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 28A (Ta) 10V 5.9mOhm @ 14A, 10V 4V @ 300µA 38 nC @ 10 V ±20V 3100 pF @ 30 V - 1.6W (Ta), 57W (Tc) 150°C (TJ) - - Surface Mount 8-SOP Advance (5x5)
STD3NK80ZT4

STD3NK80ZT4

MOSFET N-CH 800V 2.5A DPAK

STMicroelectronics

6,975 -
STD3NK80ZT4

数据表

SuperMESH™ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 2.5A (Tc) 10V 4.5Ohm @ 1.25A, 10V 4.5V @ 50µA 19 nC @ 10 V ±30V 485 pF @ 25 V - 70W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount DPAK
TK290P60Y,RQ

TK290P60Y,RQ

MOSFET N-CH 600V 11.5A DPAK

Toshiba Semiconductor and Storage

3,958 -
TK290P60Y,RQ

数据表

DTMOSV TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 11.5A (Tc) 10V 290mOhm @ 5.8A, 10V 4V @ 450µA 25 nC @ 10 V ±30V 730 pF @ 300 V - 100W (Tc) 150°C (TJ) - - Surface Mount DPAK
IRFBE30PBF-BE3

IRFBE30PBF-BE3

MOSFET N-CH 800V 4.1A TO220AB

Vishay Siliconix

2,647 -
IRFBE30PBF-BE3

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) - 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB
SISS80DN-T1-GE3

SISS80DN-T1-GE3

MOSFET N-CH 20V 58.3A/210A PPAK

Vishay Siliconix

11,696 -
SISS80DN-T1-GE3

数据表

TrenchFET® Gen IV PowerPAK® 1212-8S Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 20 V 58.3A (Ta), 210A (Tc) 2.5V, 10V 0.92mOhm @ 10A, 10V 1.5V @ 250µA 122 nC @ 10 V +12V, -8V 6450 pF @ 10 V - 5W (Ta), 65W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 1212-8S
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