二极管阵列

制造商 系列 封装/外壳 包装 产品状态 二极管配置 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 工作温度 - 结点 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管配置 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 工作温度 - 结点 等级 认证 安装类型 供应商设备封装
MDNA425P2200PTSF

MDNA425P2200PTSF

DIODE MOD GP 2200V 425A SIMBUS F

IXYS

2,404 -

-

- SimBus F Box Active - Standard 2200 V 425A - - - - - - - Chassis Mount SimBus F
VSKJ320-12

VSKJ320-12

DIODE MOD GP 1200V 320A MAGNAPAK

Vishay General Semiconductor - Diodes Division

4,805 -
VSKJ320-12

数据表

- 3-MAGN-A-PAK™ Bulk Obsolete 1 Pair Common Anode Standard 1200 V 320A - Standard Recovery >500ns, > 200mA (Io) - 50 mA @ 1200 V - - - Chassis Mount MAGN-A-PAK®
MURTA50020

MURTA50020

DIODE MODULE GP 200V 250A 3TOWER

GeneSiC Semiconductor

6,817 -
MURTA50020

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Standard 200 V 250A 1.3 V @ 250 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA50020R

MURTA50020R

DIODE MODULE GP 200V 250A 3TOWER

GeneSiC Semiconductor

9,670 -
MURTA50020R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Standard 200 V 250A 1.3 V @ 250 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA50040

MURTA50040

DIODE MODULE GP 400V 250A 3TOWER

GeneSiC Semiconductor

9,898 -
MURTA50040

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Standard 400 V 250A 1.5 V @ 250 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA50040R

MURTA50040R

DIODE MODULE GP 400V 250A 3TOWER

GeneSiC Semiconductor

2,481 -
MURTA50040R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Standard 400 V 250A 1.5 V @ 250 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA50060

MURTA50060

DIODE MODULE GP 600V 250A 3TOWER

GeneSiC Semiconductor

4,713 -
MURTA50060

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Standard 600 V 250A 1.7 V @ 250 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA50060R

MURTA50060R

DIODE MODULE GP 600V 250A 3TOWER

GeneSiC Semiconductor

6,123 -
MURTA50060R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Standard 600 V 250A 1.7 V @ 250 A Fast Recovery =< 500ns, > 200mA (Io) 250 ns 25 µA @ 50 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA400120

MURTA400120

DIODE MOD GP 1200V 200A 3TOWER

GeneSiC Semiconductor

6,477 -
MURTA400120

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Standard 1200 V 200A 2.6 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1200 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA400120R

MURTA400120R

DIODE MOD GP 1200V 200A 3TOWER

GeneSiC Semiconductor

4,014 -
MURTA400120R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Standard 1200 V 200A 2.6 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1200 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA500120

MURTA500120

DIODE MOD GP 1200V 250A 3TOWER

GeneSiC Semiconductor

6,642 -
MURTA500120

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Standard 1200 V 250A 2.6 V @ 250 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1200 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA500120R

MURTA500120R

DIODE MOD GP 1200V 250A 3TOWER

GeneSiC Semiconductor

3,168 -
MURTA500120R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Standard 1200 V 250A 2.6 V @ 250 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1200 V -55°C ~ 150°C - - Chassis Mount Three Tower
F1892CCD1200

F1892CCD1200

DIODE MODULE GP 1200V 90A MODULE

Sensata-Crydom

9,913 -
F1892CCD1200

数据表

- Module Bulk Obsolete 1 Pair Common Cathode Standard 1200 V 90A (DC) 1.4 V @ 270 A Standard Recovery >500ns, > 200mA (Io) - - -40°C ~ 125°C - - Chassis Mount Module
JAN1N7037CCU1

JAN1N7037CCU1

DIODE ARRAY SCHOTTKY 100V 35A U1

Microchip Technology

6,062 -
JAN1N7037CCU1

数据表

- 3-SMD, No Lead Tray Active 1 Pair Common Cathode Schottky 100 V 35A 1.22 V @ 35 A No Recovery Time > 500mA (Io) - 500 µA @ 100 V -65°C ~ 150°C Military MIL-PRF-19500/730 Surface Mount U1 (SMD-1)
LDR11466

LDR11466

DIODE MODULE GP 660A POWRBLOK

Powerex Inc.

6,573 -
LDR11466

数据表

- POW-R-BLOK™ Module Bulk Obsolete 1 Pair Series Connection Standard - 660A (DC) 1.4 V @ 1978 A Standard Recovery >500ns, > 200mA (Io) - 50 mA @ 1800 V -40°C ~ 150°C - - Chassis Mount POW-R-BLOK™ Module
1N7037CCU1

1N7037CCU1

DIODE ARRAY SCHOTTKY 100V 35A U1

Microchip Technology

4,678 -
1N7037CCU1

数据表

- 3-SMD, No Lead Tray Active 1 Pair Common Cathode Schottky 100 V 35A 1.22 V @ 35 A No Recovery Time > 500mA (Io) - 500 µA @ 100 V -65°C ~ 150°C - - Surface Mount U1 (SMD-1)
MDD312-20N1

MDD312-20N1

DIODE MODULE GP 2000V 310A Y1-CU

IXYS

9,670 -
MDD312-20N1

数据表

- Y1-CU Box Active 1 Pair Series Connection Standard 2000 V 310A 1.32 V @ 600 A Standard Recovery >500ns, > 200mA (Io) - 30 mA @ 2000 V -40°C ~ 150°C - - Chassis Mount Y1-CU
MDMA600P1600PT-PC

MDMA600P1600PT-PC

DIODE

IXYS

8,318 -

-

- - Box Active - - - - - - - - - - - - -
JANS1N5712UBCA

JANS1N5712UBCA

DIODE ARRAY SCHOTTKY 16V 75MA UB

Microchip Technology

2,579 -

-

- 4-SMD, No Lead Bulk Active 1 Pair Common Anode Schottky 16 V 75mA 1 V @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V -65°C ~ 150°C Military MIL-PRF-19500/444 Surface Mount UB
JANS1N5712UBCA/TR

JANS1N5712UBCA/TR

DIODE ARRAY SCHOTTKY 16V 75MA UB

Microchip Technology

9,943 -
JANS1N5712UBCA/TR

数据表

- 3-SMD, No Lead Tape & Reel (TR) Active 1 Pair Common Anode Schottky 16 V 75mA 1 V @ 35 mA Small Signal =< 200mA (Io), Any Speed - 150 nA @ 16 V -65°C ~ 150°C Military MIL-PRF-19500/444 Surface Mount UB
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