二极管阵列

制造商 系列 封装/外壳 包装 产品状态 二极管配置 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 工作温度 - 结点 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管配置 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流 (Io)(每个二极管) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 工作温度 - 结点 等级 认证 安装类型 供应商设备封装
MSRTA300100D

MSRTA300100D

DIODE MODULE GEN PURP 1000V 300A

GeneSiC Semiconductor

5,281 -
MSRTA300100D

数据表

- Module Bulk Active 1 Pair Series Connection Standard 1000 V 300A 1.1 V @ 300 A Standard Recovery >500ns, > 200mA (Io) - 20 µA @ 1000 V -55°C ~ 150°C - - Chassis Mount -
MSRTA300160D

MSRTA300160D

DIODE MODULE GEN PURP 1600V 300A

GeneSiC Semiconductor

9,007 -
MSRTA300160D

数据表

- Module Bulk Active 1 Pair Series Connection Standard 1600 V 300A 1.1 V @ 300 A Standard Recovery >500ns, > 200mA (Io) - 20 µA @ 1600 V -55°C ~ 150°C - - Chassis Mount -
MURTA300120

MURTA300120

DIODE MODULE GP 600V 150A 3TOWER

GeneSiC Semiconductor

3,191 -
MURTA300120

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Standard 600 V 150A 2.6 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 600 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA300120R

MURTA300120R

DIODE MODULE GP 600V 150A 3TOWER

GeneSiC Semiconductor

2,934 -
MURTA300120R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Standard 600 V 150A 2.6 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 600 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA30020

MURTA30020

DIODE MODULE GP 200V 150A 3TOWER

GeneSiC Semiconductor

3,098 -
MURTA30020

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Standard 200 V 150A 1 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 200 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA30020R

MURTA30020R

DIODE MODULE GP 200V 150A 3TOWER

GeneSiC Semiconductor

4,690 -
MURTA30020R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Standard 200 V 150A 1 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 200 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA30040

MURTA30040

DIODE MODULE GP 400V 150A 3TOWER

GeneSiC Semiconductor

4,157 -
MURTA30040

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Standard 400 V 150A 1.3 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 400 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA30040R

MURTA30040R

DIODE MODULE GP 400V 150A 3TOWER

GeneSiC Semiconductor

4,716 -
MURTA30040R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Standard 400 V 150A 1.3 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 400 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA30060

MURTA30060

DIODE MODULE GP 600V 150A 3TOWER

GeneSiC Semiconductor

9,110 -
MURTA30060

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Standard 600 V 150A 1.7 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 600 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA30060R

MURTA30060R

DIODE MODULE GP 600V 150A 3TOWER

GeneSiC Semiconductor

5,402 -
MURTA30060R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Standard 600 V 150A 1.7 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 600 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA40020

MURTA40020

DIODE MODULE GP 200V 200A 3TOWER

GeneSiC Semiconductor

5,678 -
MURTA40020

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Standard 200 V 200A 1.3 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 200 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA40020R

MURTA40020R

DIODE MODULE GP 200V 200A 3TOWER

GeneSiC Semiconductor

2,186 -
MURTA40020R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Standard 200 V 200A 1.3 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 200 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA40040

MURTA40040

DIODE MODULE GP 400V 200A 3TOWER

GeneSiC Semiconductor

7,896 -
MURTA40040

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Standard 400 V 200A 1.3 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 400 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA40040R

MURTA40040R

DIODE MODULE GP 400V 200A 3TOWER

GeneSiC Semiconductor

6,923 -
MURTA40040R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Standard 400 V 200A 1.3 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 400 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA40060

MURTA40060

DIODE MODULE GP 600V 200A 3TOWER

GeneSiC Semiconductor

8,926 -
MURTA40060

数据表

- Three Tower Bulk Active 1 Pair Common Cathode Standard 600 V 200A 1.7 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 600 V -55°C ~ 150°C - - Chassis Mount Three Tower
MURTA40060R

MURTA40060R

DIODE MODULE GP 600V 200A 3TOWER

GeneSiC Semiconductor

5,862 -
MURTA40060R

数据表

- Three Tower Bulk Active 1 Pair Common Anode Standard 600 V 200A 1.7 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 600 V -55°C ~ 150°C - - Chassis Mount Three Tower
MD165A12D2-BP

MD165A12D2-BP

DIODE MODULE GP 1200V 165A D2

Micro Commercial Co

8,535 -
MD165A12D2-BP

数据表

- Module Tape & Reel (TR) Active 1 Pair Common Anode Standard 1200 V 165A 1.4 V @ 300 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 1200 V -40°C ~ 150°C - - Chassis Mount D2
MD165A08D2-BP

MD165A08D2-BP

DIODE MODULE GP 800V 165A D2

Micro Commercial Co

7,087 -
MD165A08D2-BP

数据表

- Module Tape & Reel (TR) Active 1 Pair Common Anode Standard 800 V 165A 1.4 V @ 300 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 800 V -40°C ~ 150°C - - Chassis Mount D2
MD165A18D2-BP

MD165A18D2-BP

DIODE MODULE GP 1800V 165A D2

Micro Commercial Co

7,832 -
MD165A18D2-BP

数据表

- Module Tape & Reel (TR) Active 1 Pair Common Anode Standard 1800 V 165A 1.4 V @ 300 A Standard Recovery >500ns, > 200mA (Io) - 9 mA @ 1800 V -40°C ~ 150°C - - Chassis Mount D2
MDNA300P2200PTSF

MDNA300P2200PTSF

DIODE MOD GP 2200V 300A SIMBUS F

IXYS

7,898 -

-

- SimBus F Box Active - Standard 2200 V 300A - - - - - - - Chassis Mount SimBus F
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