单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANS1N5809URS

JANS1N5809URS

DIODE GEN PURP 100V 6A B SQ-MELF

Microchip Technology

3,552 -

-

- SQ-MELF, B Bulk Active Standard 100 V 6A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANS1N5811URS

JANS1N5811URS

DIODE GEN PURP 150V 6A B SQ-MELF

Microchip Technology

9,437 -

-

- SQ-MELF, B Bulk Active Standard 150 V 6A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns - - Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANS1N5807URS/TR

JANS1N5807URS/TR

UFR,FRR

Microchip Technology

2,529 -
JANS1N5807URS/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 50 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 50 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANS1N5809URS/TR

JANS1N5809URS/TR

UFR,FRR

Microchip Technology

6,332 -
JANS1N5809URS/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 100 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 100 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
JANS1N5811URS/TR

JANS1N5811URS/TR

UFR,FRR

Microchip Technology

6,074 -
JANS1N5811URS/TR

数据表

- SQ-MELF, B Tape & Reel (TR) Active Standard 150 V 3A 875 mV @ 4 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 5 µA @ 150 V 60pF @ 10V, 1MHz Military MIL-PRF-19500/477 Surface Mount B, SQ-MELF -65°C ~ 175°C
R7003403XXUA

R7003403XXUA

DIODE GP 4.4KV 300A DO200AA

Powerex Inc.

9,377 -
R7003403XXUA

数据表

- DO-200AA, A-PUK Bulk Discontinued at Digi-Key Standard 4400 V 300A 2.15 V @ 1500 A Standard Recovery >500ns, > 200mA (Io) 9 µs 50 mA @ 4400 V - - - Chassis, Stud Mount DO-200AA, R62 -65°C ~ 200°C
1N3736

1N3736

DIODE GP 200V 275A DO205AB DO9

Microchip Technology

2,661 -
1N3736

数据表

- DO-205AB, DO-9, Stud Bulk Active Standard 200 V 275A 1.3 V @ 300 A Standard Recovery >500ns, > 200mA (Io) - 75 µA @ 200 V - - - Stud Mount DO-205AB (DO-9) -65°C ~ 190°C
R9G00222XX

R9G00222XX

DIODE GP 200V 2200A DO200AB

Powerex Inc.

7,175 -
R9G00222XX

数据表

- DO-200AB, B-PUK Bulk Discontinued at Digi-Key Standard 200 V 2200A 1.1 V @ 1500 A Standard Recovery >500ns, > 200mA (Io) 15 µs 150 mA @ 200 V - - - Clamp On DO-200AB, B-PUK -
UES2606HR2

UES2606HR2

DIODE GEN PURP 30A TO3

Microchip Technology

9,894 -

-

- TO-204AA, TO-3 Bulk Active Standard - 30A 1.25 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns - - - - Through Hole TO-3 -55°C ~ 150°C
UES2606RHR2

UES2606RHR2

DIODE GEN PURP 30A TO3

Microchip Technology

9,943 -

-

- TO-204AA, TO-3 Bulk Active Standard - 30A 1.25 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns - - - - Through Hole TO-3 -55°C ~ 150°C
R9G00418XX

R9G00418XX

DIODE GP 400V 1800A DO200AB

Powerex Inc.

2,037 -
R9G00418XX

数据表

- DO-200AB, B-PUK Bulk Discontinued at Digi-Key Standard 400 V 1800A 1.2 V @ 1500 A Standard Recovery >500ns, > 200mA (Io) 25 µs 150 mA @ 400 V - - - Clamp On DO-200AB, B-PUK -
1N6864US/TR

1N6864US/TR

DIODE SCHOTTKY 80V 3A B SQ-MELF

Microchip Technology

2,353 -

-

- SQ-MELF, B Tape & Reel (TR) Active Schottky 80 V 3A 700 mV @ 3 A Fast Recovery =< 500ns, > 200mA (Io) - 150 µA @ 80 V - - - Surface Mount B, SQ-MELF -65°C ~ 125°C
LS412260

LS412260

DIODE GP 2.2KV 600A POW-R-BLOK

Powerex Inc.

3,655 -
LS412260

数据表

- POW-R-BLOK™ Module Bulk Discontinued at Digi-Key Standard 2200 V 600A 1.19 V @ 1800 A Standard Recovery >500ns, > 200mA (Io) - 40 mA @ 2200 V - - - Chassis Mount POW-R-BLOK™ Module -
M1022LC120

M1022LC120

DIODE GEN PURP 1.2KV 1022A W4

IXYS

9,217 -
M1022LC120

数据表

- DO-200AB, B-PUK Box Active Standard 1200 V 1022A 1.85 V @ 2050 A Standard Recovery >500ns, > 200mA (Io) 3 µs 100 mA @ 1200 V - - - Clamp On W4 -40°C ~ 125°C
LS411860

LS411860

DIODE GP 1.8KV 600A POW-R-BLOK

Powerex Inc.

9,121 -
LS411860

数据表

- POW-R-BLOK™ Module Bulk Discontinued at Digi-Key Standard 1800 V 600A 1.19 V @ 1800 A Standard Recovery >500ns, > 200mA (Io) - 40 mA @ 1800 V - - - Chassis Mount POW-R-BLOK™ Module -
M0955JK250

M0955JK250

DIODE GEN PURP 2.5KV 1105A W113

IXYS

7,952 -

-

- DO-200AB, B-PUK Box Active Standard 2500 V 1105A 1.44 V @ 1000 A Standard Recovery >500ns, > 200mA (Io) 3.4 µs - - - - Clamp On W113 -
M1022LC160

M1022LC160

DIODE GEN PURP 1.6KV 1022A W4

IXYS

2,400 -
M1022LC160

数据表

- DO-200AB, B-PUK Box Active Standard 1600 V 1022A 1.85 V @ 2050 A Standard Recovery >500ns, > 200mA (Io) 3 µs 100 mA @ 1600 V - - - Clamp On W4 -40°C ~ 125°C
JANTX1N6843U3

JANTX1N6843U3

DIODE SCHOTTKY 100V 10A U3

Microchip Technology

2,144 -

-

- 3-SMD, No Lead Bulk Active Schottky 100 V 10A 1.2 V @ 100 mA Fast Recovery =< 500ns, > 200mA (Io) - 10 µA @ 100 V - - - Surface Mount U3 (SMD-0.5) -65°C ~ 150°C
MDO500-20N1

MDO500-20N1

DIODE GEN PURP 2KV 560A Y1-CU

IXYS

9,522 -
MDO500-20N1

数据表

- Y1-CU Box Active Standard 2000 V 560A 1.3 V @ 1200 A Standard Recovery >500ns, > 200mA (Io) - 30 mA @ 2000 V 576pF @ 700V, 1MHz - - Chassis Mount Y1-CU -
M0955LC200

M0955LC200

DIODE GEN PURP 2KV 955A W4

IXYS

7,178 -
M0955LC200

数据表

- DO-200AB, B-PUK Box Active Standard 2000 V 955A 2.07 V @ 1900 A Standard Recovery >500ns, > 200mA (Io) 3.4 µs 50 mA @ 2000 V - - - Clamp On W4 -40°C ~ 125°C
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