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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
1N6660DT1

1N6660DT1

DIODE SCHOTTKY 45V 15A TO254AA

Microsemi Corporation

8,040 -
1N6660DT1

数据表

- TO-254-3, TO-254AA Bulk Active Schottky 45 V 15A 750 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 45 V 2000pF @ 5V, 1MHz - - Through Hole TO-254AA -65°C ~ 150°C
1N6660R

1N6660R

DIODE SCHOTTKY 45V 15A TO254AA

Microsemi Corporation

4,950 -
1N6660R

数据表

- TO-254-3, TO-254AA Bulk Active Schottky 45 V 15A 750 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 45 V 2000pF @ 5V, 1MHz - - Through Hole TO-254AA -65°C ~ 150°C
W3477MC360

W3477MC360

DIODE GEN PURP 3.6KV 3470A W54

IXYS

6,629 -
W3477MC360

数据表

- DO-200AC, K-PUK Box Active Standard 3600 V 3470A 1.34 V @ 3000 A Standard Recovery >500ns, > 200mA (Io) 38 µs 100 mA @ 3600 V - - - Clamp On W54 -40°C ~ 160°C
R7001604XXUA

R7001604XXUA

DIODE GP 1.6KV 450A DO200AA

Powerex Inc.

8,298 -
R7001604XXUA

数据表

- DO-200AA, A-PUK Bulk Discontinued at Digi-Key Standard 1600 V 450A 1.6 V @ 1500 A Standard Recovery >500ns, > 200mA (Io) 11 µs 50 mA @ 1600 V - - - Chassis, Stud Mount DO-200AA, R62 -65°C ~ 175°C
JANTXV1N486B

JANTXV1N486B

SWITCHING DIODE

Microsemi Corporation

3,601 -

-

- DO-204AH, DO-35, Axial Bulk Active Standard 225 V 200mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed - 50 nA @ 225 V - Military MIL-PRF-19500/118 Through Hole DO-204AH (DO-35) 175°C (Max)
1N6666

1N6666

DIODE GEN PURP 200V 10A TO257

Microchip Technology

7,114 -

-

- TO-257-3 Bulk Active Standard 200 V 10A 1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns - - - - Through Hole TO-257 200°C
1N6664

1N6664

DIODE GEN PURP 100V 10A TO257

Microchip Technology

6,765 -

-

- TO-257-3 Bulk Active Standard 100 V 10A 1 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns - - - - Through Hole TO-257 200°C
1N6665

1N6665

DIODE GEN PURP 150V 10A TO257

Microchip Technology

2,486 -

-

- TO-257-3 Bulk Active Standard 150 V 10A - Fast Recovery =< 500ns, > 200mA (Io) 35 ns - - - - Through Hole TO-257 200°C
1N8024-GA

1N8024-GA

DIODE SIL CARB 1.2KV 750MA TO257

GeneSiC Semiconductor

6,134 -
1N8024-GA

数据表

- TO-257-3 Tube Obsolete SiC (Silicon Carbide) Schottky 1200 V 750mA 1.74 V @ 750 mA No Recovery Time > 500mA (Io) 0 ns 10 µA @ 1200 V 66pF @ 1V, 1MHz - - Through Hole TO-257 -55°C ~ 250°C
W3477MC400

W3477MC400

DIODE GEN PURP 4KV 3470A W54

IXYS

5,211 -
W3477MC400

数据表

- DO-200AC, K-PUK Box Active Standard 4000 V 3470A 1.34 V @ 3000 A Standard Recovery >500ns, > 200mA (Io) 38 µs 100 mA @ 4000 V - - - Clamp On W54 -40°C ~ 160°C
R9G00822XX

R9G00822XX

DIODE GP 800V 2200A DO200AB

Powerex Inc.

5,656 -
R9G00822XX

数据表

- DO-200AB, B-PUK Bulk Discontinued at Digi-Key Standard 800 V 2200A 1.1 V @ 1500 A Standard Recovery >500ns, > 200mA (Io) 15 µs 150 mA @ 800 V - - - Clamp On DO-200AB, B-PUK -
R9G01212XX

R9G01212XX

DIODE GP 1.2KV 1200A DO200AB

Powerex Inc.

2,648 -
R9G01212XX

数据表

- DO-200AB, B-PUK Bulk Discontinued at Digi-Key Standard 1200 V 1200A 1.45 V @ 1500 A Standard Recovery >500ns, > 200mA (Io) 25 µs 150 mA @ 1200 V - - - Clamp On DO-200AB, B-PUK -
1N8033-GA

1N8033-GA

DIODE SIL CARB 650V 4.3A TO276

GeneSiC Semiconductor

2,273 -
1N8033-GA

数据表

- TO-276AA Tube Obsolete SiC (Silicon Carbide) Schottky 650 V 4.3A 1.65 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 5 µA @ 650 V 274pF @ 1V, 1MHz - - Surface Mount TO-276 -55°C ~ 250°C
VS-SD3000C04K

VS-SD3000C04K

DIODE GP 400V 3800A DO200AC

Vishay General Semiconductor - Diodes Division

9,419 -
VS-SD3000C04K

数据表

- DO-200AC, K-PUK Bulk Last Time Buy Standard 400 V 3800A 1.22 V @ 6000 A Standard Recovery >500ns, > 200mA (Io) - 75 mA @ 400 V - - - Clamp On DO-200AC, K-PUK -
VS-SD3000C08K

VS-SD3000C08K

DIODE GP 800V 3800A DO200AC

Vishay General Semiconductor - Diodes Division

6,277 -
VS-SD3000C08K

数据表

- DO-200AC, K-PUK Bulk Last Time Buy Standard 800 V 3800A 1.22 V @ 6000 A Standard Recovery >500ns, > 200mA (Io) - 75 mA @ 800 V - - - Clamp On DO-200AC, K-PUK -
R9G22415ASOO

R9G22415ASOO

DIODE GP 2.4KV 1500A DO200AB

Powerex Inc.

9,130 -
R9G22415ASOO

数据表

- DO-200AB, B-PUK Bulk Obsolete Standard 2400 V 1500A 1.65 V @ 1500 A Standard Recovery >500ns, > 200mA (Io) 5 µs 75 mA @ 2400 V - - - Clamp On DO-200AB, B-PUK -
38DN06B02ELEMPRXPSA1

38DN06B02ELEMPRXPSA1

DIODE GP 600V 5140A D-ELEM-1

Infineon Technologies

8,819 -

-

- DO-200AA, A-PUK Tray Active Standard 600 V 5140A 960 mV @ 4500 A Standard Recovery >500ns, > 200mA (Io) - 50 mA @ 600 V - - - Clamp On BG-D-ELEM-1 180°C (Max)
LS412660

LS412660

DIODE GP 2.6KV 600A POW-R-BLOK

Powerex Inc.

6,704 -
LS412660

数据表

- POW-R-BLOK™ Module Bulk Discontinued at Digi-Key Standard 2600 V 600A 1.18 V @ 1500 A Standard Recovery >500ns, > 200mA (Io) - 40 mA @ 2600 V - - - Chassis Mount POW-R-BLOK™ Module -40°C ~ 150°C
M1494NK250

M1494NK250

DIODE GEN PURP 2.5KV 1975A WD8

IXYS

5,063 -

-

- DO-200AB, B-PUK Box Active Standard 2500 V 1975A 1.15 V @ 1000 A Standard Recovery >500ns, > 200mA (Io) 3.9 µs - - - - Clamp On WD8 -
W3842MC240

W3842MC240

DIODE GEN PURP 2.4KV 3842A W54

IXYS

3,204 -

-

- DO-200AC, K-PUK Box Active Standard 2400 V 3842A 1.2 V @ 3000 A Standard Recovery >500ns, > 200mA (Io) 34 µs 50 mA @ 2400 V - - - Clamp On W54 -40°C ~ 160°C
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