单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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全部应用
结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
D2450N02TXPSA1

D2450N02TXPSA1

DIODE GEN PURP 200V 2450A

Infineon Technologies

4,896 -
D2450N02TXPSA1

数据表

- DO-200AB, B-PUK Tray Obsolete Standard 200 V 2450A 880 mV @ 2000 A Standard Recovery >500ns, > 200mA (Io) - 50 mA @ 200 V - - - Clamp On - -40°C ~ 180°C
RA201236XX

RA201236XX

DIODE GP 1.2KV 3600A POW-R-DISC

Powerex Inc.

4,232 -
RA201236XX

数据表

- DO-200AD Bulk Discontinued at Digi-Key Standard 1200 V 3600A 1.15 V @ 3000 A Standard Recovery >500ns, > 200mA (Io) 22 µs 200 mA @ 1200 V - - - Chassis Mount Pow-R-Disc -
688-18

688-18

DIODE GEN PURP 18KV 350MA

Microchip Technology

4,472 -
688-18

数据表

- Module Bulk Active Standard 18000 V 350mA 30 V @ 400 mA Fast Recovery =< 500ns, > 200mA (Io) 500 ns 2 µA @ 18000 V - - - Chassis Mount - -65°C ~ 150°C
688-10

688-10

DIODE GEN PURP 10KV 600MA

Microchip Technology

7,665 -
688-10

数据表

- Module Bulk Active Standard 10000 V 600mA 17 V @ 400 mA Fast Recovery =< 500ns, > 200mA (Io) 500 ns 2 µA @ 10000 V - - - Chassis Mount - -65°C ~ 150°C
688-25

688-25

DIODE GEN PURP 25KV 200MA

Microchip Technology

6,911 -

-

- Module Bulk Active Standard 25000 V 200mA 42 V @ 400 mA Small Signal =< 200mA (Io), Any Speed 500 ns 2 µA @ 25000 V - - - Chassis Mount - -65°C ~ 150°C
688-12

688-12

DIODE GEN PURP 12KV 500MA

Microchip Technology

9,560 -
688-12

数据表

- Module Bulk Active Standard 12000 V 500mA 20 V @ 400 mA Fast Recovery =< 500ns, > 200mA (Io) 500 ns 2 µA @ 12000 V - - - Chassis Mount - -65°C ~ 150°C
688-20

688-20

DIODE GEN PURP 20KV 300MA

Microchip Technology

9,068 -

-

- Module Bulk Active Standard 20000 V 300mA 34 V @ 400 mA Fast Recovery =< 500ns, > 200mA (Io) 500 ns 2 µA @ 20000 V - - - Chassis Mount - -65°C ~ 150°C
688-15

688-15

DIODE GEN PURP 15KV 400MA

Microchip Technology

6,659 -
688-15

数据表

- Module Bulk Active Standard 15000 V 400mA 25 V @ 400 mA Fast Recovery =< 500ns, > 200mA (Io) 500 ns 2 µA @ 15000 V - - - Chassis Mount - -65°C ~ 150°C
1N6776

1N6776

DIODE GEN PURP 150V 15A TO257

Microchip Technology

4,094 -

-

- TO-257-3 Bulk Active Standard 150 V 15A 1.15 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 800 mV 300pF @ 5V, 1MHz - - Through Hole TO-257 -65°C ~ 150°C
1N6777

1N6777

DIODE GEN PURP 200V 15A TO257

Microchip Technology

6,493 -

-

- TO-257-3 Bulk Active Standard 200 V 15A 1.15 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 800 mV 300pF @ 5V, 1MHz - - Through Hole TO-257 -65°C ~ 150°C
1N6778

1N6778

DIODE GEN PURP 400V 15A TO257

Microchip Technology

2,182 -

-

- TO-257-3 Bulk Active Standard 400 V 15A 1.6 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 10 µA @ 320 V 300pF @ 5V, 1MHz - - Through Hole TO-257 150°C (Max)
1N6779

1N6779

DIODE GEN PURP 600V 15A TO257

Microchip Technology

5,430 -

-

- TO-257-3 Bulk Active Standard 600 V 15A 1.6 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 10 µA @ 480 V 300pF @ 5V, 1MHz - - Through Hole TO-257 150°C (Max)
1N6772

1N6772

UFR,FRR

Microchip Technology

2,606 -

-

* - Bulk Active - - - - - - - - - - - - -
1N6773

1N6773

UFR,FRR

Microchip Technology

2,741 -

-

* - Bulk Active - - - - - - - - - - - - -
D2200N22TVFXPSA1

D2200N22TVFXPSA1

DIODE GEN PURP 2200A D7526K0-1

Infineon Technologies

3,887 -
D2200N22TVFXPSA1

数据表

- DO-200AC, K-PUK Tray Active Standard - 2200A - Standard Recovery >500ns, > 200mA (Io) - 150 mA @ 2200 V - - - Clamp On BG-D7526K0-1 -40°C ~ 160°C
GAP05SLT80-220

GAP05SLT80-220

DIODE SCHOTTKY 8KV 50MA AXIAL

GeneSiC Semiconductor

9,212 -
GAP05SLT80-220

数据表

- Axial Tube Obsolete SiC (Silicon Carbide) Schottky 8000 V 50mA 4.6 V @ 50 mA No Recovery Time > 500mA (Io) 0 ns 3.8 µA @ 8000 V 25pF @ 1V, 1MHz - - Through Hole - -55°C ~ 175°C
RA201248XX

RA201248XX

DIODE GP 1.2KV 4800A POW-R-DISC

Powerex Inc.

8,399 -
RA201248XX

数据表

- DO-200AD Bulk Discontinued at Digi-Key Standard 1200 V 4800A 1.05 V @ 3000 A Standard Recovery >500ns, > 200mA (Io) 16 µs 200 mA @ 1200 V - - - Chassis Mount Pow-R-Disc -
RA201436XX

RA201436XX

DIODE GP 1.4KV 3600A POW-R-DISC

Powerex Inc.

4,362 -
RA201436XX

数据表

- DO-200AD Bulk Discontinued at Digi-Key Standard 1400 V 3600A 1.15 V @ 3000 A Standard Recovery >500ns, > 200mA (Io) 22 µs 200 mA @ 1400 V - - - Chassis Mount Pow-R-Disc -
JANHCA1N6702

JANHCA1N6702

DIODE SCHOTTKY 40V 5A AXIAL

Microchip Technology

2,613 -

-

- Axial Bulk Active Schottky 40 V 5A 470 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 40 V - - - Through Hole Axial -65°C ~ 125°C
1N6774

1N6774

DIODE GEN PURP 50V 15A TO257

Microchip Technology

5,977 -

-

- TO-257-3 Bulk Active Standard 50 V 15A 1.15 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 800 mV 300pF @ 5V, 1MHz - - Through Hole TO-257 -65°C ~ 150°C
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