单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JANS1N5711UB

JANS1N5711UB

DIODE SCHOTTKY 50V UB

Microchip Technology

4,050 -

-

- 4-SMD, No Lead Bulk Active Schottky 50 V - 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz Military MIL-PRF-19500/444 Surface Mount UB -65°C ~ 150°C
JANS1N5711UB/TR

JANS1N5711UB/TR

DIODE SCHOTTKY 50V UB

Microchip Technology

8,317 -

-

- 4-SMD, No Lead Tape & Reel (TR) Active Schottky 50 V - 1 V @ 15 mA Small Signal =< 200mA (Io), Any Speed - 200 nA @ 50 V 2pF @ 0V, 1MHz Military MIL-PRF-19500/444 Surface Mount UB -65°C ~ 150°C
1N6656

1N6656

DIODE GEN PURP 200V 20A TO254

Microchip Technology

3,438 -

-

- TO-254-3, TO-254AA Bulk Active Standard 200 V 20A 1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns - - - - Through Hole TO-254AA -
1N6655

1N6655

DIODE GEN PURP 150V 20A TO254

Microchip Technology

6,237 -

-

- TO-254-3, TO-254AA Bulk Active Standard 150 V 20A 1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 150 V 150pF @ 10V, 1MHz - - Through Hole TO-254AA -65°C ~ 175°C
1N6654

1N6654

DIODE GEN PURP 100V 20A TO254

Microchip Technology

2,873 -

-

- TO-254-3, TO-254AA Bulk Active Standard 100 V 20A 1 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns - - - - Through Hole TO-254AA -
JANTX1N6658

JANTX1N6658

DIODE GEN PURP 150V 15A TO254

Microchip Technology

9,656 -

-

- TO-254-3, TO-254AA Bulk Active Standard 150 V 15A 1.2 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 150 V 150pF @ 10V, 1MHz Military MIL-PRF-19500/616 Through Hole TO-254 -
JANTX1N6658R

JANTX1N6658R

DIODE GEN PURP 150V 15A TO254

Microchip Technology

5,658 -

-

- TO-254-3, TO-254AA Bulk Active Standard, Reverse Polarity 150 V 15A 1.2 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 150 V 150pF @ 10V, 1MHz Military MIL-PRF-19500/616 Through Hole TO-254 -
JANTX1N6659

JANTX1N6659

DIODE GEN PURP 200V 15A TO254

Microchip Technology

5,326 -

-

- TO-254-3, TO-254AA Bulk Active Standard 200 V 15A 1.2 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 150pF @ 10V, 1MHz Military MIL-PRF-19500/616 Through Hole TO-254 -
JANTX1N6659R

JANTX1N6659R

DIODE GEN PURP 200V 15A TO254

Microchip Technology

7,653 -

-

- TO-254-3, TO-254AA Bulk Active Standard, Reverse Polarity 200 V 15A 1.2 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V 150pF @ 10V, 1MHz Military MIL-PRF-19500/616 Through Hole TO-254 -
RA202036XX

RA202036XX

DIODE GP 2KV 3600A POW-R-DISC

Powerex Inc.

4,290 -
RA202036XX

数据表

- DO-200AD Bulk Discontinued at Digi-Key Standard 2000 V 3600A 1.15 V @ 3000 A Standard Recovery >500ns, > 200mA (Io) 22 µs 200 mA @ 2000 V - - - Chassis Mount Pow-R-Disc -
RA202220XX

RA202220XX

DIODE GP 2.2KV 2000A POW-R-DISC

Powerex Inc.

4,491 -
RA202220XX

数据表

- DO-200AD Bulk Discontinued at Digi-Key Standard 2200 V 2000A 1.45 V @ 3000 A Standard Recovery >500ns, > 200mA (Io) 25 µs 200 mA @ 2200 V - - - Chassis Mount Pow-R-Disc -
JAN1N3890R

JAN1N3890R

DIODE GEN PURP 100V 12A DO203AA

Microchip Technology

7,583 -

-

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 100 V 12A 1.5 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 10 µA @ 100 V 115pF @ 10V, 1MHz Military MIL-PRF-19500/304 Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
JAN1N3891R

JAN1N3891R

DIODE GEN PURP 200V 12A DO203AA

Microchip Technology

6,446 -

-

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 200 V 12A 1.5 V @ 38 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 10 µA @ 200 V 115pF @ 10V, 1MHz Military MIL-PRF-19500/304 Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
JAN1N3890AR

JAN1N3890AR

DIODE GEN PURP 100V 20A DO203AA

Microchip Technology

7,481 -

-

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 100 V 20A 1.5 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns - 115pF @ 10V, 1MHz Military MIL-PRF-19500/304 Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
JAN1N3891AR

JAN1N3891AR

DIODE GEN PURP 200V 20A DO203AA

Microchip Technology

8,065 -

-

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 200 V 20A 1.5 V @ 38 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns - 115pF @ 10V, 1MHz Military MIL-PRF-19500/304 Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
JAN1N3893AR

JAN1N3893AR

DIODE GEN PURP 400V 20A DO203AA

Microchip Technology

7,883 -

-

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 400 V 20A 1.5 V @ 38 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns - 115pF @ 10V, 1MHz Military MIL-PRF-19500/304 Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
JAN1N3893R

JAN1N3893R

DIODE GEN PURP 400V 12A DO203AA

Microchip Technology

5,221 -

-

- DO-203AA, DO-4, Stud Bulk Active Standard, Reverse Polarity 400 V 12A 1.5 V @ 38 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns - 115pF @ 10V, 1MHz Military MIL-PRF-19500/304 Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
JANTX1N3893A

JANTX1N3893A

DIODE GEN PURP 400V 20A DO203AA

Microchip Technology

8,456 -

-

- DO-203AA, DO-4, Stud Bulk Active Standard 400 V 20A 1.5 V @ 38 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns - 115pF @ 10V, 1MHz Military MIL-PRF-19500/304 Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
JANTX1N3890A

JANTX1N3890A

DIODE GEN PURP 100V 12A DO203AA

Microchip Technology

8,620 -
JANTX1N3890A

数据表

- DO-203AA, DO-4, Stud Bulk Active Standard 100 V 12A 1.5 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 200 ns 10 µA @ 100 V - Military MIL-PRF-19500/304 Chassis, Stud Mount DO-203AA (DO-4) -65°C ~ 175°C
RA202425XX

RA202425XX

DIODE GP 2.4KV 2500A POW-R-DISC

Powerex Inc.

7,730 -
RA202425XX

数据表

- DO-200AD Bulk Discontinued at Digi-Key Standard 2400 V 2500A 1.25 V @ 3000 A Standard Recovery >500ns, > 200mA (Io) 25 µs 200 mA @ 2400 V - - - Chassis Mount Pow-R-Disc -
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