单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
IDH12S60CAKSA1

IDH12S60CAKSA1

DIODE SIL CARB 600V 12A TO220-2

Infineon Technologies

8,966 -
IDH12S60CAKSA1

数据表

CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 160 µA @ 600 V 530pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
IDH16S60CAKSA1

IDH16S60CAKSA1

DIODE SIL CARB 600V 16A TO220-2

Infineon Technologies

3,535 -
IDH16S60CAKSA1

数据表

CoolSiC™+ TO-220-2 Tube Discontinued at Digi-Key SiC (Silicon Carbide) Schottky 600 V 16A 1.7 V @ 16 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 650pF @ 1V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
MMBD914LT3HTMA1

MMBD914LT3HTMA1

DIODE GEN PURP 100V 250MA SOT23

Infineon Technologies

4,777 -
MMBD914LT3HTMA1

数据表

- TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Obsolete Standard 100 V 250mA 1.25 V @ 150 mA Fast Recovery =< 500ns, > 200mA (Io) 4 ns 100 nA @ 75 V 2pF @ 0V, 1MHz - - Surface Mount PG-SOT23 150°C (Max)
SDB06S60

SDB06S60

DIODE SIL CARB 600V 6A TO263

Infineon Technologies

3,281 -
SDB06S60

数据表

CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Obsolete SiC (Silicon Carbide) Schottky 600 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 600 V 300pF @ 0V, 1MHz - - Surface Mount PG-TO263-2 -55°C ~ 175°C
SDP10S30

SDP10S30

DIODE SIL CARB 300V 10A TO220-3

Infineon Technologies

8,076 -
SDP10S30

数据表

CoolSiC™+ TO-220-3 Tube Obsolete SiC (Silicon Carbide) Schottky 300 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 300 V 600pF @ 0V, 1MHz - - Through Hole PG-TO220-3 -55°C ~ 175°C
SDT10S60

SDT10S60

DIODE SIL CARB 600V 10A TO220-2

Infineon Technologies

4,537 -
SDT10S60

数据表

CoolSiC™+ TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 350 µA @ 600 V 350pF @ 0V, 1MHz - - Through Hole PG-TO220-2-2 -55°C ~ 175°C
SIDC03D60F6X1SA2

SIDC03D60F6X1SA2

DIODE GP 600V 6A WAFER

Infineon Technologies

4,457 -
SIDC03D60F6X1SA2

数据表

- Die Bulk Obsolete Standard 600 V 6A 1.6 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) - 27 µA @ 600 V - - - Surface Mount Sawn on foil -40°C ~ 150°C
SIDC04D60F6X1SA3

SIDC04D60F6X1SA3

DIODE GP 600V 9A WAFER

Infineon Technologies

6,676 -
SIDC04D60F6X1SA3

数据表

- Die Bulk Obsolete Standard 600 V 9A 1.6 V @ 9 A Fast Recovery =< 500ns, > 200mA (Io) - 27 µA @ 600 V - - - Surface Mount Sawn on foil -40°C ~ 150°C
SIDC06D60E6X1SA3

SIDC06D60E6X1SA3

DIODE GP 600V 10A WAFER

Infineon Technologies

2,009 -
SIDC06D60E6X1SA3

数据表

- Die Bulk Obsolete Standard 600 V 10A 1.25 V @ 10 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 600 V - - - Surface Mount Sawn on foil -55°C ~ 150°C
SIDC06D60F6X1SA3

SIDC06D60F6X1SA3

DIODE GP 600V 15A WAFER

Infineon Technologies

4,017 -
SIDC06D60F6X1SA3

数据表

- Die Bulk Obsolete Standard 600 V 15A 1.6 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 27 µA @ 600 V - - - Surface Mount Sawn on foil -40°C ~ 150°C
SIDC07D60E6X1SA1

SIDC07D60E6X1SA1

DIODE GP 600V 15A WAFER

Infineon Technologies

4,060 -
SIDC07D60E6X1SA1

数据表

- Die Bulk Obsolete Standard 600 V 15A 1.25 V @ 15 A Standard Recovery >500ns, > 200mA (Io) - 250 µA @ 600 V - - - Surface Mount Sawn on foil -55°C ~ 150°C
SIDC07D60F6X1SA2

SIDC07D60F6X1SA2

DIODE GP 600V 22.5A WAFER

Infineon Technologies

6,249 -
SIDC07D60F6X1SA2

数据表

- Die Bulk Obsolete Standard 600 V 22.5A 1.6 V @ 22.5 A Fast Recovery =< 500ns, > 200mA (Io) - 27 µA @ 600 V - - - Surface Mount Sawn on foil -40°C ~ 150°C
SIDC09D60E6X1SA1

SIDC09D60E6X1SA1

DIODE GP 600V 20A WAFER

Infineon Technologies

9,064 -
SIDC09D60E6X1SA1

数据表

- Die Bulk Obsolete Standard 600 V 20A 1.7 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 27 µA @ 600 V - - - Surface Mount Sawn on foil -55°C ~ 150°C
SIDC09D60F6X1SA2

SIDC09D60F6X1SA2

DIODE GP 600V 30A WAFER

Infineon Technologies

8,573 -
SIDC09D60F6X1SA2

数据表

- Die Bulk Obsolete Standard 600 V 30A 1.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 27 µA @ 600 V - - - Surface Mount Sawn on foil -40°C ~ 175°C
SIDC14D120E6X1SA4

SIDC14D120E6X1SA4

DIODE GP 1.2KV 15A WAFER

Infineon Technologies

5,673 -
SIDC14D120E6X1SA4

数据表

- Die Bulk Discontinued at Digi-Key Standard 1200 V 15A 1.9 V @ 15 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 1200 V - - - Surface Mount Sawn on foil -55°C ~ 150°C
SIDC14D60E6X1SA1

SIDC14D60E6X1SA1

DIODE GP 600V 30A WAFER

Infineon Technologies

8,648 -
SIDC14D60E6X1SA1

数据表

- Die Bulk Obsolete Standard 600 V 30A 1.25 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 600 V - - - Surface Mount Sawn on foil -55°C ~ 150°C
SIDC14D60F6X1SA2

SIDC14D60F6X1SA2

DIODE GP 600V 45A WAFER

Infineon Technologies

8,220 -
SIDC14D60F6X1SA2

数据表

- Die Bulk Obsolete Standard 600 V 45A 1.6 V @ 45 A Fast Recovery =< 500ns, > 200mA (Io) - 27 µA @ 600 V - - - Surface Mount Sawn on foil -40°C ~ 150°C
SIDC23D60E6X1SA4

SIDC23D60E6X1SA4

DIODE GP 600V 50A WAFER

Infineon Technologies

5,159 -
SIDC23D60E6X1SA4

数据表

- Die Bulk Obsolete Standard 600 V 50A 1.25 V @ 50 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 600 V - - - Surface Mount Sawn on foil -55°C ~ 150°C
SIDC42D60E6X1SA1

SIDC42D60E6X1SA1

DIODE GP 600V 100A WAFER

Infineon Technologies

7,132 -
SIDC42D60E6X1SA1

数据表

- Die Bulk Obsolete Standard 600 V 100A 1.25 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 600 V - - - Surface Mount Sawn on foil -55°C ~ 150°C
SIDC56D60E6X1SA1

SIDC56D60E6X1SA1

DIODE GP 600V 150A WAFER

Infineon Technologies

2,187 -
SIDC56D60E6X1SA1

数据表

- Die Bulk Obsolete Standard 600 V 150A 1.25 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 27 µA @ 600 V - - - Surface Mount Sawn on foil -55°C ~ 150°C
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