单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
BYV29F-300-E3/45

BYV29F-300-E3/45

DIODE GEN PURP 300V 8A ITO220AC

Vishay General Semiconductor - Diodes Division

6,036 -
BYV29F-300-E3/45

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Obsolete Standard 300 V 8A 1.25 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 300 V - - - Through Hole ITO-220AC -40°C ~ 150°C
BYV29F-400-E3/45

BYV29F-400-E3/45

DIODE GEN PURP 400V 8A ITO220AC

Vishay General Semiconductor - Diodes Division

8,027 -
BYV29F-400-E3/45

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Obsolete Standard 400 V 8A 1.25 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 400 V - - - Through Hole ITO-220AC -40°C ~ 150°C
BYW29-100HE3/45

BYW29-100HE3/45

DIODE GEN PURP 100V 8A TO220AC

Vishay General Semiconductor - Diodes Division

4,029 -
BYW29-100HE3/45

数据表

- TO-220-2 Tube Obsolete Standard 100 V 8A 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 10 µA @ 100 V 45pF @ 4V, 1MHz - - Through Hole TO-220AC -65°C ~ 150°C
BYW29-150HE3/45

BYW29-150HE3/45

DIODE GEN PURP 150V 8A TO220AC

Vishay General Semiconductor - Diodes Division

2,062 -
BYW29-150HE3/45

数据表

- TO-220-2 Tube Obsolete Standard 150 V 8A 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 10 µA @ 150 V 45pF @ 4V, 1MHz - - Through Hole TO-220AC -65°C ~ 150°C
BYW29-200HE3/45

BYW29-200HE3/45

DIODE GEN PURP 200V 8A TO220AC

Vishay General Semiconductor - Diodes Division

4,226 -
BYW29-200HE3/45

数据表

- TO-220-2 Tube Obsolete Standard 200 V 8A 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 10 µA @ 200 V 45pF @ 4V, 1MHz - - Through Hole TO-220AC -65°C ~ 150°C
BYW29-50HE3/45

BYW29-50HE3/45

DIODE GEN PURP 50V 8A TO220AC

Vishay General Semiconductor - Diodes Division

4,943 -
BYW29-50HE3/45

数据表

- TO-220-2 Tube Obsolete Standard 50 V 8A 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 10 µA @ 50 V 45pF @ 4V, 1MHz - - Through Hole TO-220AC -65°C ~ 150°C
DTV32-E3/45

DTV32-E3/45

DIODE GEN PURP 1.5KV 10A TO220AC

Vishay General Semiconductor - Diodes Division

2,039 -
DTV32-E3/45

数据表

- TO-220-2 Tube Obsolete Standard 1500 V 10A 1.5 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 175 ns 100 µA @ 1500 V - - - Through Hole TO-220AC -55°C ~ 150°C
DTV32B-E3/45

DTV32B-E3/45

DIODE GEN PURP 1.5KV 10A TO263AB

Vishay General Semiconductor - Diodes Division

9,368 -
DTV32B-E3/45

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete Standard 1500 V 10A 1.5 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 175 ns 100 µA @ 1500 V - - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
DTV32F-E3/45

DTV32F-E3/45

DIODE GP 1.5KV 10A ITO220AC

Vishay General Semiconductor - Diodes Division

6,721 -
DTV32F-E3/45

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Obsolete Standard 1500 V 10A 1.5 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 175 ns 100 µA @ 1500 V - - - Through Hole ITO-220AC -55°C ~ 150°C
DTV56-E3/45

DTV56-E3/45

DIODE GEN PURP 1.5KV 10A TO220AC

Vishay General Semiconductor - Diodes Division

3,504 -
DTV56-E3/45

数据表

- TO-220-2 Tube Obsolete Standard 1500 V 10A 1.8 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 135 ns 100 µA @ 1500 V - - - Through Hole TO-220AC -55°C ~ 150°C
DTV56F-E3/45

DTV56F-E3/45

DIODE GP 1.5KV 10A ITO220AC

Vishay General Semiconductor - Diodes Division

3,354 -
DTV56F-E3/45

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Obsolete Standard 1500 V 10A 1.8 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 135 ns 100 µA @ 1500 V - - - Through Hole ITO-220AC -55°C ~ 150°C
DTV56L-E3/45

DTV56L-E3/45

DIODE GEN PURP 1.5KV 10A TO220AC

Vishay General Semiconductor - Diodes Division

4,262 -

-

- TO-220-2 Tube Active Standard 1500 V 10A 1.8 V @ 6 A Fast Recovery =< 500ns, > 200mA (Io) 135 ns 100 µA @ 1500 V - - - Through Hole TO-220AC -55°C ~ 150°C
FES16ATHE3/45

FES16ATHE3/45

DIODE GEN PURP 50V 16A TO220AC

Vishay General Semiconductor - Diodes Division

9,246 -
FES16ATHE3/45

数据表

- TO-220-2 Tube Obsolete Standard 50 V 16A 975 mV @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 50 V - Automotive AEC-Q101 Through Hole TO-220AC -65°C ~ 150°C
FES16BTHE3/45

FES16BTHE3/45

DIODE GEN PURP 100V 16A TO220AC

Vishay General Semiconductor - Diodes Division

7,446 -
FES16BTHE3/45

数据表

- TO-220-2 Tube Obsolete Standard 100 V 16A 975 mV @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 100 V - Automotive AEC-Q101 Through Hole TO-220AC -65°C ~ 150°C
FES16CTHE3/45

FES16CTHE3/45

DIODE GEN PURP 150V 16A TO220AC

Vishay General Semiconductor - Diodes Division

7,492 -
FES16CTHE3/45

数据表

- TO-220-2 Tube Obsolete Standard 150 V 16A 975 mV @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 150 V - Automotive AEC-Q101 Through Hole TO-220AC -65°C ~ 150°C
FES16DTHE3/45

FES16DTHE3/45

DIODE GEN PURP 200V 16A TO220AC

Vishay General Semiconductor - Diodes Division

5,123 -
FES16DTHE3/45

数据表

- TO-220-2 Tube Obsolete Standard 200 V 16A 975 mV @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V - Automotive AEC-Q101 Through Hole TO-220AC -65°C ~ 150°C
FES16FTHE3/45

FES16FTHE3/45

DIODE GEN PURP 300V 16A TO220AC

Vishay General Semiconductor - Diodes Division

9,141 -
FES16FTHE3/45

数据表

- TO-220-2 Tube Obsolete Standard 300 V 16A 1.3 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 300 V - Automotive AEC-Q101 Through Hole TO-220AC -65°C ~ 150°C
FES16GTHE3/45

FES16GTHE3/45

DIODE GEN PURP 400V 16A TO220AC

Vishay General Semiconductor - Diodes Division

4,335 -
FES16GTHE3/45

数据表

- TO-220-2 Tube Obsolete Standard 400 V 16A 1.3 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 400 V - Automotive AEC-Q101 Through Hole TO-220AC -65°C ~ 150°C
FES16HTHE3/45

FES16HTHE3/45

DIODE GEN PURP 500V 16A TO220AC

Vishay General Semiconductor - Diodes Division

8,252 -
FES16HTHE3/45

数据表

- TO-220-2 Tube Obsolete Standard 500 V 16A 1.5 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 500 V - Automotive AEC-Q101 Through Hole TO-220AC -65°C ~ 150°C
FES16JTHE3/45

FES16JTHE3/45

DIODE GEN PURP 600V 16A TO220AC

Vishay General Semiconductor - Diodes Division

2,258 -
FES16JTHE3/45

数据表

- TO-220-2 Tube Obsolete Standard 600 V 16A 1.5 V @ 16 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-220AC -65°C ~ 150°C
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