单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

全部重置
全部应用
结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
FES8ATHE3/45

FES8ATHE3/45

DIODE GEN PURP 50V 8A TO220AC

Vishay General Semiconductor - Diodes Division

8,531 -
FES8ATHE3/45

数据表

- TO-220-2 Tube Obsolete Standard 50 V 8A 950 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 50 V - Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
FES8BTHE3/45

FES8BTHE3/45

DIODE GEN PURP 100V 8A TO220AC

Vishay General Semiconductor - Diodes Division

9,884 -
FES8BTHE3/45

数据表

- TO-220-2 Tube Obsolete Standard 100 V 8A 950 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 100 V - Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
FES8CTHE3/45

FES8CTHE3/45

DIODE GEN PURP 150V 8A TO220AC

Vishay General Semiconductor - Diodes Division

5,828 -
FES8CTHE3/45

数据表

- TO-220-2 Tube Obsolete Standard 150 V 8A 950 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 150 V - Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
FES8DTHE3/45

FES8DTHE3/45

DIODE GEN PURP 200V 8A TO220AC

Vishay General Semiconductor - Diodes Division

5,486 -
FES8DTHE3/45

数据表

- TO-220-2 Tube Obsolete Standard 200 V 8A 950 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 200 V - Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
FES8FTHE3/45

FES8FTHE3/45

DIODE GEN PURP 300V 8A TO220AC

Vishay General Semiconductor - Diodes Division

7,946 -
FES8FTHE3/45

数据表

- TO-220-2 Tube Obsolete Standard 300 V 8A 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 300 V - Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
FES8GTHE3/45

FES8GTHE3/45

DIODE GEN PURP 400V 8A TO220AC

Vishay General Semiconductor - Diodes Division

5,274 -
FES8GTHE3/45

数据表

- TO-220-2 Tube Obsolete Standard 400 V 8A 1.3 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 400 V - Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
FES8HTHE3/45

FES8HTHE3/45

DIODE GEN PURP 500V 8A TO220AC

Vishay General Semiconductor - Diodes Division

8,530 -
FES8HTHE3/45

数据表

- TO-220-2 Tube Obsolete Standard 500 V 8A 1.5 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 500 V - Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
FES8JTHE3/45

FES8JTHE3/45

DIODE GEN PURP 600V 8A TO220AC

Vishay General Semiconductor - Diodes Division

8,831 -
FES8JTHE3/45

数据表

- TO-220-2 Tube Obsolete Standard 600 V 8A 1.5 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
GI1401HE3/45

GI1401HE3/45

DIODE GEN PURP 50V 8A TO220AC

Vishay General Semiconductor - Diodes Division

8,566 -
GI1401HE3/45

数据表

- TO-220-2 Tube Obsolete Standard 50 V 8A 975 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 50 V - - - Through Hole TO-220AC -65°C ~ 150°C
GI1402HE3/45

GI1402HE3/45

DIODE GEN PURP 100V 8A TO220AC

Vishay General Semiconductor - Diodes Division

6,337 -
GI1402HE3/45

数据表

- TO-220-2 Tube Obsolete Standard 100 V 8A 975 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 100 V - - - Through Hole TO-220AC -65°C ~ 150°C
GI1404HE3/45

GI1404HE3/45

DIODE GEN PURP 200V 8A TO220AC

Vishay General Semiconductor - Diodes Division

3,986 -
GI1404HE3/45

数据表

- TO-220-2 Tube Obsolete Standard 200 V 8A 975 mV @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 200 V - - - Through Hole TO-220AC -65°C ~ 150°C
GUR5H60-E3/45

GUR5H60-E3/45

DIODE GEN PURP 600V 5A TO220AC

Vishay General Semiconductor - Diodes Division

6,918 -
GUR5H60-E3/45

数据表

- TO-220-2 Tube Obsolete Standard 600 V 5A 1.8 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 20 µA @ 600 V - - - Through Hole TO-220AC -55°C ~ 150°C
GUR5H60HE3/45

GUR5H60HE3/45

DIODE GEN PURP 600V 5A TO220AC

Vishay General Semiconductor - Diodes Division

4,636 -
GUR5H60HE3/45

数据表

- TO-220-2 Tube Obsolete Standard 600 V 5A 1.8 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 20 µA @ 600 V - - - Through Hole TO-220AC -55°C ~ 150°C
GURB5H60HE3/45

GURB5H60HE3/45

DIODE GEN PURP 600V 5A TO263AB

Vishay General Semiconductor - Diodes Division

8,425 -
GURB5H60HE3/45

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete Standard 600 V 5A 1.8 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 20 µA @ 600 V - - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
GURF5H60-E3/45

GURF5H60-E3/45

DIODE GEN PURP 600V 5A ITO220AC

Vishay General Semiconductor - Diodes Division

2,218 -
GURF5H60-E3/45

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Obsolete Standard 600 V 5A 1.8 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 20 µA @ 600 V - - - Through Hole ITO-220AC -55°C ~ 150°C
GURF5H60HE3/45

GURF5H60HE3/45

DIODE GEN PURP 600V 5A ITO220AC

Vishay General Semiconductor - Diodes Division

7,815 -
GURF5H60HE3/45

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Obsolete Standard 600 V 5A 1.8 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 20 µA @ 600 V - - - Through Hole ITO-220AC -55°C ~ 150°C
M2035S-E3/4W

M2035S-E3/4W

DIODE SCHOTTKY 35V 20A TO220-3

Vishay General Semiconductor - Diodes Division

6,421 -
M2035S-E3/4W

数据表

- TO-220-3 Tube Obsolete Schottky 35 V 20A 700 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 35 V - - - Through Hole TO-220-3 -55°C ~ 150°C
M2045S-E3/4W

M2045S-E3/4W

DIODE SCHOTTKY 45V 20A TO220-3

Vishay General Semiconductor - Diodes Division

6,662 -
M2045S-E3/4W

数据表

- TO-220-3 Tube Obsolete Schottky 45 V 20A 700 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 45 V - - - Through Hole TO-220-3 -55°C ~ 150°C
M3035S-E3/4W

M3035S-E3/4W

DIODE SCHOTTKY 35V 30A TO220-3

Vishay General Semiconductor - Diodes Division

4,046 -
M3035S-E3/4W

数据表

- TO-220-3 Tube Obsolete Schottky 35 V 30A 700 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 35 V - - - Through Hole TO-220-3 -65°C ~ 150°C
M3045S-E3/4W

M3045S-E3/4W

DIODE SCHOTTKY 45V 30A TO220-3

Vishay General Semiconductor - Diodes Division

6,243 -
M3045S-E3/4W

数据表

- TO-220-3 Tube Obsolete Schottky 45 V 30A 700 mV @ 30 A Fast Recovery =< 500ns, > 200mA (Io) - 200 µA @ 45 V - - - Through Hole TO-220-3 -65°C ~ 150°C
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