单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

全部重置
全部应用
结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
UG8JTHE3/45

UG8JTHE3/45

DIODE GEN PURP 600V 8A TO220AC

Vishay General Semiconductor - Diodes Division

2,172 -
UG8JTHE3/45

数据表

- TO-220-2 Tube Obsolete Standard 600 V 8A 1.75 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 30 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-220AC -55°C ~ 150°C
UGB12HTHE3/45

UGB12HTHE3/45

DIODE GEN PURP 500V 12A TO263AB

Vishay General Semiconductor - Diodes Division

4,401 -
UGB12HTHE3/45

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete Standard 500 V 12A 1.75 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 30 µA @ 500 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
UGB12JTHE3/45

UGB12JTHE3/45

DIODE GEN PURP 600V 12A TO263AB

Vishay General Semiconductor - Diodes Division

5,489 -
UGB12JTHE3/45

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete Standard 600 V 12A 1.75 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 30 µA @ 600 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
UGB5HTHE3/45

UGB5HTHE3/45

DIODE GEN PURP 500V 5A TO263AB

Vishay General Semiconductor - Diodes Division

4,242 -
UGB5HTHE3/45

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete Standard 500 V 5A 1.75 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 30 µA @ 500 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
UGB5JT-E3/45

UGB5JT-E3/45

DIODE GEN PURP 600V 5A TO263AB

Vishay General Semiconductor - Diodes Division

2,746 -
UGB5JT-E3/45

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete Standard 600 V 5A 1.75 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 30 µA @ 600 V - - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
UGB5JTHE3/45

UGB5JTHE3/45

DIODE GEN PURP 600V 5A TO263AB

Vishay General Semiconductor - Diodes Division

7,002 -
UGB5JTHE3/45

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete Standard 600 V 5A 1.75 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 30 µA @ 600 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
UGB8CT-E3/45

UGB8CT-E3/45

DIODE GEN PURP 150V 8A TO263AB

Vishay General Semiconductor - Diodes Division

8,771 -
UGB8CT-E3/45

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete Standard 150 V 8A 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 150 V - - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
UGB8CTHE3_A/P

UGB8CTHE3_A/P

DIODE GEN PURP 150V 8A TO263AB

Vishay General Semiconductor - Diodes Division

4,853 -
UGB8CTHE3_A/P

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete Standard 150 V 8A 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 150 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
UGB8DT-E3/45

UGB8DT-E3/45

DIODE GEN PURP 200V 8A TO263AB

Vishay General Semiconductor - Diodes Division

3,951 -
UGB8DT-E3/45

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete Standard 200 V 8A 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 200 V - - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
UGB8DTHE3_A/P

UGB8DTHE3_A/P

DIODE GEN PURP 200V 8A TO263AB

Vishay General Semiconductor - Diodes Division

3,198 -
UGB8DTHE3_A/P

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete Standard 200 V 8A 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 200 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
UGB8FTHE3_A/P

UGB8FTHE3_A/P

DIODE GEN PURP 300V 8A TO263AB

Vishay General Semiconductor - Diodes Division

2,137 -
UGB8FTHE3_A/P

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete Standard 300 V 8A 1.25 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 300 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
UGB8GTHE3_A/P

UGB8GTHE3_A/P

DIODE GEN PURP 400V 8A TO263AB

Vishay General Semiconductor - Diodes Division

7,092 -
UGB8GTHE3_A/P

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete Standard 400 V 8A 1.25 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 10 µA @ 400 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -40°C ~ 150°C
UGB8HTHE3_A/P

UGB8HTHE3_A/P

DIODE GEN PURP 500V 8A TO263AB

Vishay General Semiconductor - Diodes Division

3,049 -
UGB8HTHE3_A/P

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete Standard 500 V 8A 1.75 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 30 µA @ 500 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
UGB8JT-E3/45

UGB8JT-E3/45

DIODE GEN PURP 600V 8A TO263AB

Vishay General Semiconductor - Diodes Division

7,970 -
UGB8JT-E3/45

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete Standard 600 V 8A 1.75 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 30 µA @ 600 V - - - Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
UGB8JTHE3_A/P

UGB8JTHE3_A/P

DIODE GEN PURP 600V 8A TO263AB

Vishay General Semiconductor - Diodes Division

4,704 -
UGB8JTHE3_A/P

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Obsolete Standard 600 V 8A 1.75 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 30 µA @ 600 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 150°C
UGF12HTHE3/45

UGF12HTHE3/45

DIODE GEN PURP 500V 12A ITO220AC

Vishay General Semiconductor - Diodes Division

5,612 -
UGF12HTHE3/45

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Obsolete Standard 500 V 12A 1.75 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 30 µA @ 500 V - Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
UGF12JT-E3/45

UGF12JT-E3/45

DIODE GEN PURP 600V 12A ITO220AC

Vishay General Semiconductor - Diodes Division

3,945 -
UGF12JT-E3/45

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Obsolete Standard 600 V 12A 1.75 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 30 µA @ 600 V - - - Through Hole ITO-220AC -55°C ~ 150°C
UGF12JTHE3/45

UGF12JTHE3/45

DIODE GEN PURP 600V 12A ITO220AC

Vishay General Semiconductor - Diodes Division

8,892 -
UGF12JTHE3/45

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Obsolete Standard 600 V 12A 1.75 V @ 12 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 30 µA @ 600 V - Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
UGF15HT-E3/45

UGF15HT-E3/45

DIODE GEN PURP 500V 15A ITO220AC

Vishay General Semiconductor - Diodes Division

6,627 -

-

- TO-220-2 Full Pack, Isolated Tab Tube Obsolete Standard 500 V 15A 1.75 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 30 µA @ 500 V - - - Through Hole ITO-220AC -55°C ~ 150°C
UGF15HTHE3/45

UGF15HTHE3/45

DIODE GEN PURP 500V 15A ITO220AC

Vishay General Semiconductor - Diodes Division

4,456 -

-

- TO-220-2 Full Pack, Isolated Tab Tube Obsolete Standard 500 V 15A 1.75 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 30 µA @ 500 V - - - Through Hole ITO-220AC -55°C ~ 150°C
深圳市宝利科技有限公司

搜索

深圳市宝利科技有限公司

产品

深圳市宝利科技有限公司

电话

深圳市宝利科技有限公司

用户