单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
UGF15JT-E3/45

UGF15JT-E3/45

DIODE GEN PURP 600V 15A ITO220AC

Vishay General Semiconductor - Diodes Division

8,402 -

-

- TO-220-2 Full Pack, Isolated Tab Tube Obsolete Standard 600 V 15A 1.75 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 30 µA @ 600 V - - - Through Hole ITO-220AC -55°C ~ 150°C
UGF5HT-E3/45

UGF5HT-E3/45

DIODE GEN PURP 500V 5A ITO220AC

Vishay General Semiconductor - Diodes Division

2,641 -
UGF5HT-E3/45

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Obsolete Standard 500 V 5A 1.75 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 30 µA @ 500 V - - - Through Hole ITO-220AC -55°C ~ 150°C
UGF5HTHE3/45

UGF5HTHE3/45

DIODE GEN PURP 500V 5A ITO220AC

Vishay General Semiconductor - Diodes Division

2,001 -
UGF5HTHE3/45

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Obsolete Standard 500 V 5A 1.75 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 30 µA @ 500 V - Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
UGF5JT-E3/45

UGF5JT-E3/45

DIODE GEN PURP 600V 5A ITO220AC

Vishay General Semiconductor - Diodes Division

8,080 -
UGF5JT-E3/45

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Obsolete Standard 600 V 5A 1.75 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 30 µA @ 600 V - - - Through Hole ITO-220AC -55°C ~ 150°C
UGF5JTHE3/45

UGF5JTHE3/45

DIODE GEN PURP 600V 5A ITO220AC

Vishay General Semiconductor - Diodes Division

8,400 -
UGF5JTHE3/45

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Obsolete Standard 600 V 5A 1.75 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 30 µA @ 600 V - Automotive AEC-Q101 Through Hole ITO-220AC -55°C ~ 150°C
UGF8BT-E3/45

UGF8BT-E3/45

DIODE GEN PURP 100V 8A ITO220AC

Vishay General Semiconductor - Diodes Division

7,758 -
UGF8BT-E3/45

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Obsolete Standard 100 V 8A 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 100 V - - - Through Hole ITO-220AC -55°C ~ 150°C
UGF8DT-E3/45

UGF8DT-E3/45

DIODE GEN PURP 200V 8A ITO220AC

Vishay General Semiconductor - Diodes Division

3,590 -
UGF8DT-E3/45

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Obsolete Standard 200 V 8A 1 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 200 V - - - Through Hole ITO-220AC -55°C ~ 150°C
UGF8JT-E3/45

UGF8JT-E3/45

DIODE GEN PURP 600V 8A ITO220AC

Vishay General Semiconductor - Diodes Division

8,676 -
UGF8JT-E3/45

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Obsolete Standard 600 V 8A 1.75 V @ 8 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 30 µA @ 600 V - - - Through Hole ITO-220AC -55°C ~ 150°C
UH10JT-E3/4W

UH10JT-E3/4W

DIODE GEN PURP 600V 10A TO220AC

Vishay General Semiconductor - Diodes Division

6,613 -
UH10JT-E3/4W

数据表

- TO-220-2 Tube Obsolete Standard 600 V 10A - Fast Recovery =< 500ns, > 200mA (Io) 25 ns - - - - Through Hole TO-220AC -55°C ~ 175°C
UH5JT-E3/4W

UH5JT-E3/4W

DIODE GEN PURP 600V 8A TO220AC

Vishay General Semiconductor - Diodes Division

5,039 -
UH5JT-E3/4W

数据表

- TO-220-2 Tube Obsolete Standard 600 V 8A 3 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 5 µA @ 600 V - - - Through Hole TO-220AC -55°C ~ 175°C
UHF10JT-E3/45

UHF10JT-E3/45

DIODE GEN PURP 600V 10A ITO220AC

Vishay General Semiconductor - Diodes Division

3,353 -
UHF10JT-E3/45

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Obsolete Standard 600 V 10A - Fast Recovery =< 500ns, > 200mA (Io) 25 ns - - - - Through Hole ITO-220AC -55°C ~ 175°C
UHF5JT-E3/4W

UHF5JT-E3/4W

DIODE GEN PURP 600V 8A ITO220AC

Vishay General Semiconductor - Diodes Division

7,650 -
UHF5JT-E3/4W

数据表

- TO-220-2 Full Pack, Isolated Tab Tube Obsolete Standard 600 V 8A 3 V @ 5 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 5 µA @ 600 V - - - Through Hole ITO-220AC -55°C ~ 175°C
SB1245

SB1245

DIODE SCHOTTKY 45V 12A DO201AD

onsemi

2,191 -
SB1245

数据表

- DO-201AD, Axial Tape & Reel (TR) Obsolete Schottky 45 V 12A 550 mV @ 12 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 45 V - - - Through Hole DO-201AD -55°C ~ 150°C
VS-8EWS12STRPBF

VS-8EWS12STRPBF

DIODE GEN PURP 1.2KV 8A DPAK

Vishay General Semiconductor - Diodes Division

2,007 -
VS-8EWS12STRPBF

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete Standard 1200 V 8A 1.1 V @ 8 A Standard Recovery >500ns, > 200mA (Io) - 50 µA @ 1200 V - - - Surface Mount TO-252AA (DPAK) -55°C ~ 150°C
SBR1A40SA-13

SBR1A40SA-13

DIODE SBR 40V 1A SMA

Diodes Incorporated

9,463 -
SBR1A40SA-13

数据表

SBR® DO-214AC, SMA Tape & Reel (TR) Discontinued at Digi-Key Super Barrier 40 V 1A 500 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) - 500 µA @ 40 V - - - Surface Mount SMA -65°C ~ 150°C
STPSC1206D

STPSC1206D

DIODE SIL CARB 600V 12A TO220AC

STMicroelectronics

7,294 -
STPSC1206D

数据表

- TO-220-2 Tube Obsolete SiC (Silicon Carbide) Schottky 600 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 150 µA @ 600 V 750pF @ 0V, 1MHz - - Through Hole TO-220AC -40°C ~ 175°C
BAT6402WH6327XTSA1

BAT6402WH6327XTSA1

DIODE SCHOTTKY 40V 120MA SCD-80

Infineon Technologies

6,080 -
BAT6402WH6327XTSA1

数据表

BAT64 SC-80 Tape & Reel (TR) Obsolete Schottky 40 V 120mA 750 mV @ 100 mA Small Signal =< 200mA (Io), Any Speed 5 ns 2 µA @ 30 V 6pF @ 1V, 1MHz Automotive AEC-Q101 Surface Mount SCD-80 150°C (Max)
CMH05A(TE12L,Q,M)

CMH05A(TE12L,Q,M)

DIODE GEN PURP 400V 1A M-FLAT

Toshiba Semiconductor and Storage

6,518 -
CMH05A(TE12L,Q,M)

数据表

- SOD-128 Tape & Reel (TR) Obsolete Standard 400 V 1A 1.8 V @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V - - - Surface Mount M-FLAT (2.4x3.8) -40°C ~ 150°C
CMH08A(TE12L,Q,M)

CMH08A(TE12L,Q,M)

DIODE GEN PURP 400V 2A M-FLAT

Toshiba Semiconductor and Storage

4,353 -

-

- SOD-128 Tape & Reel (TR) Obsolete Standard 400 V 2A 1.8 V @ 2 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 400 V - - - Surface Mount M-FLAT (2.4x3.8) -40°C ~ 150°C
RF101A2ST-32

RF101A2ST-32

DIODE GEN PURP 200V 1A MSR

Rohm Semiconductor

8,209 -
RF101A2ST-32

数据表

- DO-41 Mini, Axial Tape & Box (TB) Obsolete Standard 200 V 1A 870 mV @ 1 A Fast Recovery =< 500ns, > 200mA (Io) 25 ns 10 µA @ 200 V - - - Through Hole MSR 150°C (Max)
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