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制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
JAN1N5617

JAN1N5617

DIODE GEN PURP 400V 1A AXIAL

Microchip Technology

177 -
JAN1N5617

数据表

- A, Axial Bulk Active Standard 400 V 1A 1.6 V @ 3 A Fast Recovery =< 500ns, > 200mA (Io) 150 ns 500 nA @ 400 V - Military MIL-PRF-19500/429 Through Hole A, Axial -65°C ~ 175°C
DSEP30-06A

DSEP30-06A

DIODE GEN PURP 600V 30A TO247AD

IXYS

990 -
DSEP30-06A

数据表

HiPerFRED™ TO-247-2 Tube Active Standard 600 V 30A 1.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 250 µA @ 600 V - - - Through Hole TO-247AD -55°C ~ 175°C
IDM08G120C5XTMA1

IDM08G120C5XTMA1

DIODE SIL CARB 1.2KV 8A TO252-2

Infineon Technologies

1,688 -
IDM08G120C5XTMA1

数据表

CoolSiC™+ TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 8A 1.95 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 1200 V 365pF @ 1V, 1MHz - - Surface Mount PG-TO252-2 -55°C ~ 175°C
DNA30E2200PA

DNA30E2200PA

DIODE GEN PURP 2.2KV 30A TO220AC

IXYS

219 -
DNA30E2200PA

数据表

- TO-220-2 Tube Active Standard 2200 V 30A 1.26 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 2200 V 7pF @ 700V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
1N5620

1N5620

DIODE GEN PURP 800V 1A AXIAL

Microchip Technology

300 -
1N5620

数据表

- A, Axial Bulk Active Standard 800 V 1A 1.3 V @ 3 A Standard Recovery >500ns, > 200mA (Io) 2 µs 500 nA @ 800 V - - - Through Hole A, Axial -65°C ~ 200°C
STPSC10H065DI

STPSC10H065DI

DIODE SIC 650V 10A TO220AC INS

STMicroelectronics

999 -
STPSC10H065DI

数据表

- TO-220-2 Insulated, TO-220AC Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.75 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 650 V - - - Through Hole TO-220AC ins -40°C ~ 175°C
IDW100E60FKSA1

IDW100E60FKSA1

DIODE GP 600V 150A TO247-3-1

Infineon Technologies

388 -
IDW100E60FKSA1

数据表

- TO-247-3 Tube Active Standard 600 V 150A 2 V @ 100 A Fast Recovery =< 500ns, > 200mA (Io) 120 ns 40 µA @ 600 V - - - Through Hole PG-TO247-3-1 -55°C ~ 175°C
C3D06065I

C3D06065I

DIODE SIL CARB 650V 13A TO220-2

Wolfspeed, Inc.

970 -
C3D06065I

数据表

Z-Rec® TO-220-2 Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 650 V 13A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 650 V 295pF @ 0V, 1MHz - - Through Hole TO-220-2 Isolated Tab -55°C ~ 175°C
C3D08060A

C3D08060A

DIODE SIL CARB 600V 24A TO220-2

Wolfspeed, Inc.

357 -
C3D08060A

数据表

Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 600 V 24A 1.8 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 441pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
1N3611

1N3611

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

341 -
1N3611

数据表

- A, Axial Bulk Active Standard 200 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 200 V - - - Through Hole A, Axial -65°C ~ 175°C
VS-30EPH06-N3

VS-30EPH06-N3

DIODE GP 600V 30A TO247AC

Vishay General Semiconductor - Diodes Division

5,744 -
VS-30EPH06-N3

数据表

FRED Pt® TO-247-2 Tube Active Standard 600 V 30A 2.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 31 ns 50 µA @ 600 V - - - Through Hole TO-247AC Modified -65°C ~ 175°C
STPSC12065DY

STPSC12065DY

DIODE SIL CARB 650V 12A TO220AC

STMicroelectronics

7,548 -
STPSC12065DY

数据表

ECOPACK®2 TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.45 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 50 µA @ 600 V 750pF @ 0V, 1MHz Automotive AEC-Q101 Through Hole TO-220AC -40°C ~ 175°C
ISL9R3060G2-F085

ISL9R3060G2-F085

DIODE GEN PURP 600V 30A TO247-2

onsemi

418 -
ISL9R3060G2-F085

数据表

Stealth™ TO-247-2 Tube Active Avalanche 600 V 30A 2.4 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 45 ns 100 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247-2 -55°C ~ 175°C
UJ3D1210TS

UJ3D1210TS

DIODE SIL CARB 1.2KV 10A TO220-2

Qorvo

8,990 -
UJ3D1210TS

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 1200 V 10A 1.6 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 110 µA @ 1200 V 510pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
DLA40IM800PC-TRL

DLA40IM800PC-TRL

DIODE GEN PURP 800V 40A TO263AA

IXYS

1,266 -
DLA40IM800PC-TRL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 800 V 40A 1.3 V @ 40 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V 10pF @ 400V, 1MHz - - Surface Mount TO-263AA -55°C ~ 175°C
IDK08G120C5XTMA1

IDK08G120C5XTMA1

DIODE SIC 1.2KV 22.8A TO263-1

Infineon Technologies

373 -
IDK08G120C5XTMA1

数据表

CoolSiC™+ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 22.8A 1.95 V @ 8 A No Recovery Time > 500mA (Io) - 40 µA @ 1200 V 365pF @ 1V, 1MHz - - Surface Mount PG-TO263-2-1 -55°C ~ 175°C
DSI30-16AS-TRL

DSI30-16AS-TRL

DIODE GEN PURP 1.6KV 30A TO263AA

IXYS

2,638 -
DSI30-16AS-TRL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1600 V 30A 1.29 V @ 30 A Standard Recovery >500ns, > 200mA (Io) - 40 µA @ 1600 V 10pF @ 400V, 1MHz - - Surface Mount TO-263AA -40°C ~ 175°C
DSEP29-12A

DSEP29-12A

DIODE GEN PURP 1.2KV 30A TO220AC

IXYS

774 -
DSEP29-12A

数据表

HiPerFRED™ TO-220-2 Tube Active Standard 1200 V 30A 2.75 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 250 µA @ 1200 V - - - Through Hole TO-220AC -55°C ~ 175°C
JANTX1N3611

JANTX1N3611

DIODE GEN PURP 200V 1A AXIAL

Microchip Technology

356 -
JANTX1N3611

数据表

- A, Axial Bulk Active Standard 200 V 1A 1.1 V @ 1 A Standard Recovery >500ns, > 200mA (Io) - 1 µA @ 200 V - Military MIL-PRF-19500/228 Through Hole A, Axial -65°C ~ 175°C
DSEI30-10A

DSEI30-10A

DIODE GEN PURP 1KV 30A TO247AD

IXYS

445 -
DSEI30-10A

数据表

- TO-247-2 Tube Active Standard 1000 V 30A 2.4 V @ 36 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 750 µA @ 1000 V - - - Through Hole TO-247AD -40°C ~ 150°C
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