单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
STPS20SM100ST

STPS20SM100ST

DIODE SCHOTTKY 100V 20A TO220

STMicroelectronics

887 -
STPS20SM100ST

数据表

- TO-220-3 Tube Active Schottky 100 V 20A 900 mV @ 20 A Fast Recovery =< 500ns, > 200mA (Io) - 30 µA @ 100 V - - - Through Hole TO-220 150°C (Max)
CBS05F30,L3F

CBS05F30,L3F

DIODE SCHOTTKY 30V 500MA CST2B

Toshiba Semiconductor and Storage

9,981 -
CBS05F30,L3F

数据表

- 2-SMD, No Lead Tape & Reel (TR) Active Schottky 30 V 500mA - Fast Recovery =< 500ns, > 200mA (Io) - 50 µA @ 30 V 118pF @ 0V, 1MHz - - Surface Mount CST2B 125°C (Max)
VS-E5TX3012-M3

VS-E5TX3012-M3

DIODE GEN PURP 1.2KV 30A TO220AC

Vishay General Semiconductor - Diodes Division

7,970 -
VS-E5TX3012-M3

数据表

FRED Pt® TO-220-2 Tube Active Standard 1200 V 30A 3.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 50 µA @ 1200 V - - - Through Hole TO-220AC -55°C ~ 175°C
DSEI25-06A

DSEI25-06A

DIODE GEN PURP 600V 25A TO220-2

IXYS

2,072 -
DSEI25-06A

数据表

- TO-220-2 Tube Active Standard 600 V 25A 1.31 V @ 25 A Fast Recovery =< 500ns, > 200mA (Io) 50 ns 100 µA @ 600 V 20pF @ 400V, 1MHz - - Through Hole TO-220-2 -40°C ~ 150°C
RB078BGE30STL

RB078BGE30STL

DIODE SCHOTTKY 30V 5A TO252GE

Rohm Semiconductor

2,500 -
RB078BGE30STL

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active Schottky 30 V 5A 720 mV @ 5 A Fast Recovery =< 500ns, > 200mA (Io) - 5 µA @ 30 V - - - Surface Mount TO-252GE 150°C
RFN20TF6SFHC9

RFN20TF6SFHC9

DIODE GEN PURP 600V 20A TO220NFM

Rohm Semiconductor

458 -
RFN20TF6SFHC9

数据表

- TO-220-2 Full Pack Tube Active Standard 600 V 20A 1.55 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 60 ns 10 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-220NFM 150°C (Max)
S3D06065I

S3D06065I

DIODE SIL CARB 650V 6A TO220

SMC Diode Solutions

891 -
S3D06065I

数据表

- TO-220-2 Isolated Tab Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 8 µA @ 650 V 382pF @ 0V, 1MHz - - Through Hole TO-220-Isolation -55°C ~ 175°C
RFN10NS3STL

RFN10NS3STL

DIODE GEN PURP 350V 10A LPDS

Rohm Semiconductor

975 -
RFN10NS3STL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 350 V 10A 1.5 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 30 ns 10 µA @ 350 V - - - Surface Mount LPDS 150°C
RFUH20TJ6SGC9

RFUH20TJ6SGC9

DIODE GP 600V 20A TO220ACFP

Rohm Semiconductor

635 -
RFUH20TJ6SGC9

数据表

- TO-220-2 Full Pack Tube Active Standard 600 V 20A 2.8 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 10 µA @ 600 V - - - Through Hole TO-220ACFP 150°C
1N4938-1

1N4938-1

DIODE GEN PURP 175V 100MA DO35

Microchip Technology

369 -

-

- DO-204AH, DO-35, Axial Bulk Active Standard 175 V 100mA 1 V @ 100 mA Small Signal =< 200mA (Io), Any Speed 50 ns 100 nA @ 175 V - - - Through Hole DO-204AH (DO-35) -65°C ~ 175°C
FFSD0665A

FFSD0665A

DIODE SIL CARBIDE 650V 11A DPAK

onsemi

2,396 -
FFSD0665A

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 11A 1.75 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 361pF @ 1V, 100kHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
VS-EPH3006LHN3

VS-EPH3006LHN3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

180 -
VS-EPH3006LHN3

数据表

FRED Pt® TO-247-2 Tube Active Standard 600 V 30A 2.65 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 26 ns 30 µA @ 600 V - Automotive AEC-Q101 Through Hole TO-247AD -55°C ~ 175°C
S3D06065E

S3D06065E

DIODE SIL CARBIDE 650V 6A DPAK

SMC Diode Solutions

682 -
S3D06065E

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 6A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 8 µA @ 650 V 382pF @ 0V, 1MHz - - Surface Mount DPAK -55°C ~ 175°C
VS-E5PX3006L-N3

VS-E5PX3006L-N3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

636 -
VS-E5PX3006L-N3

数据表

FRED Pt® TO-247-2 Tube Active Standard 600 V 30A 2.1 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 41 ns 20 µA @ 600 V - - - Through Hole TO-247AD -55°C ~ 175°C
TPMR10J S1G

TPMR10J S1G

DIODE GEN PURP 600V 10A TO277A

Taiwan Semiconductor Corporation

2,672 -

-

- TO-277, 3-PowerDFN Tape & Reel (TR) Active Standard 600 V 10A 1.8 V @ 10 A Fast Recovery =< 500ns, > 200mA (Io) 40 ns 10 µA @ 600 V 140pF @ 4V, 1MHz - - Surface Mount TO-277A (SMPC) -55°C ~ 175°C
UJ3D06512TS

UJ3D06512TS

DIODE SIL CARB 650V 12A TO220-2

Qorvo

10,601 -
UJ3D06512TS

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 12A 1.7 V @ 12 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 392pF @ 1V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
VS-E5TX1512S2LHM3

VS-E5TX1512S2LHM3

DIODE GEN PURP 1.2KV 15A TO263AB

Vishay General Semiconductor - Diodes Division

694 -
VS-E5TX1512S2LHM3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 15A 3.3 V @ 15 A Fast Recovery =< 500ns, > 200mA (Io) 77.5 ns 50 µA @ 1200 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
STPSC6H065D

STPSC6H065D

DIODE SIL CARB 650V 6A TO220AC

STMicroelectronics

958 -
STPSC6H065D

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 6A 1.75 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 300pF @ 0V, 1MHz - - Through Hole TO-220AC -40°C ~ 175°C
VS-C4PU6006L-N3

VS-C4PU6006L-N3

DIODE GEN PURP 600V 30A TO247AD

Vishay General Semiconductor - Diodes Division

500 -
VS-C4PU6006L-N3

数据表

FRED Pt® TO-247-3 Tube Active Standard 600 V 30A 1.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 65 ns 50 µA @ 600 V - - - Through Hole TO-247AD -55°C ~ 175°C
SCS302AHGC9

SCS302AHGC9

DIODE SIC 650V 2.15A TO220ACP

Rohm Semiconductor

643 -
SCS302AHGC9

数据表

- TO-220-2 Tube Not For New Designs SiC (Silicon Carbide) Schottky 650 V 2.15A 1.5 V @ 2 A No Recovery Time > 500mA (Io) 0 ns 10.8 µA @ 650 V 110pF @ 1V, 1MHz - - Through Hole TO-220ACP 175°C (Max)
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