单个二极管

制造商 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 电压 - 直流反向 (Vr)(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 速度 反向恢复时间 (trr) 电流 - 反向漏电 @ Vr 电容 @ Vr, F 等级 认证 安装类型 供应商设备封装 工作温度 - 结点
FFSP1065B-F085

FFSP1065B-F085

DIODE SIL CARB 650V 10A TO220-2

onsemi

789 -
FFSP1065B-F085

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 421pF @ 1V, 100kHz Automotive AEC-Q101 Through Hole TO-220-2 -55°C ~ 175°C
VS-E5TX3012S2LHM3

VS-E5TX3012S2LHM3

DIODE GEN PURP 1.2KV 30A TO263AB

Vishay General Semiconductor - Diodes Division

1,582 -
VS-E5TX3012S2LHM3

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 1200 V 30A 3.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 80 ns 50 µA @ 1200 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
VS-20ETF08-M3

VS-20ETF08-M3

DIODE GEN PURP 800V 20A TO220AC

Vishay General Semiconductor - Diodes Division

7,984 -
VS-20ETF08-M3

数据表

- TO-220-2 Tube Active Standard 800 V 20A 1.3 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 95 ns 100 µA @ 800 V - - - Through Hole TO-220AC -40°C ~ 150°C
RFN20NS3STL

RFN20NS3STL

DIODE GEN PURP 350V 20A LPDS

Rohm Semiconductor

784 -
RFN20NS3STL

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 350 V 20A 1.35 V @ 20 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 10 µA @ 350 V - - - Surface Mount LPDS 150°C
C3D06065A

C3D06065A

DIODE SIL CARB 650V 19A TO220-2

Wolfspeed, Inc.

839 -
C3D06065A

数据表

Z-Rec® TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 19A 1.8 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 60 µA @ 650 V 294pF @ 0V, 1MHz - - Through Hole TO-220-2 -55°C ~ 175°C
STPSC8H065D

STPSC8H065D

DIODE SIL CARB 650V 8A TO220AC

STMicroelectronics

794 -
STPSC8H065D

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 8A 1.75 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 80 µA @ 650 V 414pF @ 0V, 1MHz - - Through Hole TO-220AC -40°C ~ 175°C
STTH30M06SPF

STTH30M06SPF

DIODE GEN PURP 600V 30A TO3PF

STMicroelectronics

876 -
STTH30M06SPF

数据表

- TO-3P-3 Full Pack Tube Active Standard 600 V 30A 3.8 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 60 µA @ 600 V - - - Through Hole TO-3PF 175°C (Max)
RFS30TZ6SGC13

RFS30TZ6SGC13

DIODE GEN PURP 650V 30A TO247GE

Rohm Semiconductor

584 -
RFS30TZ6SGC13

数据表

- TO-247-2 Tube Not For New Designs Standard 650 V 30A 2.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 35 ns 5 µA @ 650 V - - - Through Hole TO-247GE 175°C
FFSD0865B-F085

FFSD0865B-F085

DIODE SIL CARB 650V 11.6A DPAK

onsemi

3,693 -
FFSD0865B-F085

数据表

- TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 11.6A 1.7 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 336pF @ 1V, 100kHz - - Surface Mount TO-252 (DPAK) -55°C ~ 175°C
STTH30R04DY

STTH30R04DY

DIODE GEN PURP 400V 30A TO220AC

STMicroelectronics

772 -
STTH30R04DY

数据表

- TO-220-2 Tube Active Standard 400 V 30A 1.55 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 15 µA @ 400 V - Automotive AEC-Q101 Through Hole TO-220AC -40°C ~ 175°C
S3D10065F

S3D10065F

DIODE SIL CARB 650V 10A ITO220AC

SMC Diode Solutions

285 -
S3D10065F

数据表

- TO-220-2 Full Pack Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.7 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 650 V 621pF @ 0V, 1MHz - - Through Hole ITO-220AC (TO-220-2F) -55°C ~ 175°C
FFSM0665B

FFSM0665B

DIODE SIL CARB 650V 9.1A 4PQFN

onsemi

2,980 -
FFSM0665B

数据表

- 4-PowerTSFN Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 650 V 9.1A 1.7 V @ 6 A No Recovery Time > 500mA (Io) 0 ns 40 µA @ 650 V 259pF @ 1V, 100kHz - - Surface Mount 4-PQFN (8x8) -55°C ~ 175°C
VS-E5TH3006S2LHM3

VS-E5TH3006S2LHM3

30A, 600V, "H" SERIES GEN 5 FRED

Vishay General Semiconductor - Diodes Division

789 -
VS-E5TH3006S2LHM3

数据表

FRED Pt® G5 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Standard 600 V 30A 1.6 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 46 ns 20 µA @ 600 V - Automotive AEC-Q101 Surface Mount TO-263AB (D2PAK) -55°C ~ 175°C
S4D05120G

S4D05120G

DIODE SIL CARBIDE 1.2KV 5A D2PAK

SMC Diode Solutions

702 -
S4D05120G

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active SiC (Silicon Carbide) Schottky 1200 V 5A 1.8 V @ 5 A No Recovery Time > 500mA (Io) 0 ns 20 µA @ 1200 V 302pF @ 0V, 1MHz - - Surface Mount D2PAK -55°C ~ 175°C
VS-3C10ET07T-M3

VS-3C10ET07T-M3

650 V POWER SIC GEN 3 MERGED PIN

Vishay General Semiconductor - Diodes Division

3,047 -
VS-3C10ET07T-M3

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 10A 1.5 V @ 10 A No Recovery Time > 500mA (Io) 0 ns 55 µA @ 650 V 445pF @ 1V, 1MHz - - Through Hole TO-220AC -55°C ~ 175°C
FFSP0865A

FFSP0865A

DIODE SIL CARB 650V 13A TO220-2

onsemi

790 -
FFSP0865A

数据表

- TO-220-2 Tube Active SiC (Silicon Carbide) Schottky 650 V 13A 1.75 V @ 8 A No Recovery Time > 500mA (Io) 0 ns 200 µA @ 650 V 463pF @ 1V, 100kHz - - Through Hole TO-220-2 -55°C ~ 175°C
VS-E5PH3012L-N3

VS-E5PH3012L-N3

DIODE GEN PURP 1.2KV 30A TO247AD

Vishay General Semiconductor - Diodes Division

243 -
VS-E5PH3012L-N3

数据表

FRED Pt® TO-247-2 Tube Active Standard 1200 V 30A 2.3 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 113 ns 50 µA @ 1200 V - - - Through Hole TO-247AD -55°C ~ 175°C
UCHD30A09-TE24L2

UCHD30A09-TE24L2

DIODE SCHOTTKY 90V 30A TO263LP

KYOCERA AVX

2,000 -
UCHD30A09-TE24L2

数据表

- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active Schottky 90 V 30A 790 mV @ 15 A Fast Recovery =< 500ns, > 200mA (Io) - 100 µA @ 90 V - - - Surface Mount TO-263LP -40°C ~ 150°C
VS-EPX6007L-N3

VS-EPX6007L-N3

DIODE GEN PURP 650V 60A TO247AD

Vishay General Semiconductor - Diodes Division

495 -
VS-EPX6007L-N3

数据表

- TO-247-2 Tube Active Standard 650 V 60A 2.5 V @ 60 A Fast Recovery =< 500ns, > 200mA (Io) 42 ns 30 µA @ 650 V - - - Through Hole TO-247AD -55°C ~ 175°C
VS-E5PX3012L-N3

VS-E5PX3012L-N3

DIODE GEN PURP 1.2KV 30A TO247AD

Vishay General Semiconductor - Diodes Division

372 -
VS-E5PX3012L-N3

数据表

FRED Pt® TO-247-2 Tube Active Standard 1200 V 30A 3.15 V @ 30 A Fast Recovery =< 500ns, > 200mA (Io) 100 ns 50 µA @ 1200 V - - - Through Hole TO-247AD -55°C ~ 175°C
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