桥式整流器

制造商 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装
KBP305G C2G

KBP305G C2G

BRIDGE RECT 1PHASE 600V 3A KBP

Taiwan Semiconductor Corporation

6,093 -
KBP305G C2G

数据表

- 4-SIP, KBP Tube Obsolete Single Phase Standard 600 V 3 A 1.1 V @ 3 A 10 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole KBP
KBP307G C2

KBP307G C2

BRIDGE RECT 1PHASE 1KV 3A KBP

Taiwan Semiconductor Corporation

2,446 -
KBP307G C2

数据表

- 4-SIP, KBP Tube Obsolete Single Phase Standard 1 kV 3 A 1.1 V @ 3 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole KBP
KBP307G C2G

KBP307G C2G

BRIDGE RECT 1PHASE 1KV 3A KBP

Taiwan Semiconductor Corporation

7,951 -
KBP307G C2G

数据表

- 4-SIP, KBP Tube Obsolete Single Phase Standard 1 kV 3 A 1.1 V @ 3 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole KBP
CBR1F-010

CBR1F-010

BRIDGE RECT 1P 100V 1.5A A CASE

Central Semiconductor Corp

6,417 -
CBR1F-010

数据表

- 4-Circular, A Case Box Obsolete Single Phase Standard 100 V 1.5 A 1.3 V @ 1 A 10 µA @ 100 V -65°C ~ 150°C (TJ) - - Through Hole A Case
CBR2-010

CBR2-010

BRIDGE RECT 1P 100V 2A A CASE

Central Semiconductor Corp

6,232 -
CBR2-010

数据表

- 4-Circular, A Case Box Obsolete Single Phase Standard 100 V 2 A 1.1 V @ 2 A 10 µA @ 100 V -65°C ~ 150°C (TJ) - - Through Hole A Case
CBR2-020

CBR2-020

BRIDGE RECT 1P 200V 2A A CASE

Central Semiconductor Corp

9,911 -
CBR2-020

数据表

- 4-Circular, A Case Box Obsolete Single Phase Standard 200 V 2 A 1.1 V @ 2 A 10 µA @ 200 V -65°C ~ 150°C (TJ) - - Through Hole A Case
CBR2-040

CBR2-040

BRIDGE RECT 1P 400V 2A A CASE

Central Semiconductor Corp

4,859 -
CBR2-040

数据表

- 4-Circular, A Case Box Obsolete Single Phase Standard 400 V 2 A 1.1 V @ 2 A 10 µA @ 400 V -65°C ~ 150°C (TJ) - - Through Hole A Case
CBR2-080

CBR2-080

BRIDGE RECT 1P 800V 2A A CASE

Central Semiconductor Corp

8,562 -
CBR2-080

数据表

- 4-Circular, A Case Box Obsolete Single Phase Standard 800 V 2 A 1.1 V @ 2 A 10 µA @ 800 V -65°C ~ 150°C (TJ) - - Through Hole A Case
CBR2-100

CBR2-100

BRIDGE RECT 1PHASE 1KV 2A A CASE

Central Semiconductor Corp

2,234 -
CBR2-100

数据表

- 4-Circular, A Case Box Obsolete Single Phase Standard 1 kV 2 A 1.1 V @ 2 A 10 µA @ 1000 V -65°C ~ 150°C (TJ) - - Through Hole A Case
G3SBA60-5410M3/45

G3SBA60-5410M3/45

BRIDGE RECT 1PHASE 600V 2.3A GBU

Vishay General Semiconductor - Diodes Division

7,484 -
G3SBA60-5410M3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 2.3 A 1 V @ 2 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
G3SBA60-5410M3/51

G3SBA60-5410M3/51

BRIDGE RECT 1PHASE 600V 2.3A GBU

Vishay General Semiconductor - Diodes Division

4,721 -
G3SBA60-5410M3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 2.3 A 1 V @ 2 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBL06-3E3/51

GBL06-3E3/51

BRIDGE RECT 1PHASE 600V 3A GBL

Vishay General Semiconductor - Diodes Division

7,150 -
GBL06-3E3/51

数据表

- 4-SIP, GBL Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBL
GBL06L-5303E3/51

GBL06L-5303E3/51

BRIDGE RECT 1PHASE 600V 3A GBL

Vishay General Semiconductor - Diodes Division

3,590 -
GBL06L-5303E3/51

数据表

- 4-SIP, GBL Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBL
GBL06L-5305E3/45

GBL06L-5305E3/45

BRIDGE RECT 1PHASE 600V 3A GBL

Vishay General Semiconductor - Diodes Division

2,499 -
GBL06L-5305E3/45

数据表

- 4-SIP, GBL Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBL
GBL06L-5306E3/51

GBL06L-5306E3/51

BRIDGE RECT 1PHASE 600V 3A GBL

Vishay General Semiconductor - Diodes Division

7,727 -
GBL06L-5306E3/51

数据表

- 4-SIP, GBL Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBL
GBL06L-5308E3/51

GBL06L-5308E3/51

BRIDGE RECT 1PHASE 600V 3A GBL

Vishay General Semiconductor - Diodes Division

5,137 -
GBL06L-5308E3/51

数据表

- 4-SIP, GBL Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBL
GBL06L-5600E3/51

GBL06L-5600E3/51

BRIDGE RECT 1PHASE 600V 3A GBL

Vishay General Semiconductor - Diodes Division

8,504 -
GBL06L-5600E3/51

数据表

- 4-SIP, GBL Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBL
GBL06L-5701E3/51

GBL06L-5701E3/51

BRIDGE RECT 1PHASE 600V 3A GBL

Vishay General Semiconductor - Diodes Division

9,111 -
GBL06L-5701E3/51

数据表

- 4-SIP, GBL Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBL
GBL06L-6177E3/51

GBL06L-6177E3/51

BRIDGE RECT 1PHASE 600V 3A GBL

Vishay General Semiconductor - Diodes Division

2,045 -
GBL06L-6177E3/51

数据表

- 4-SIP, GBL Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBL
GBL06L-6832E3/45

GBL06L-6832E3/45

BRIDGE RECT 1PHASE 600V 3A GBL

Vishay General Semiconductor - Diodes Division

4,891 -
GBL06L-6832E3/45

数据表

- 4-SIP, GBL Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBL
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