桥式整流器

制造商 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装

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结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装
GBU4JL-5303M3/45

GBU4JL-5303M3/45

BRIDGE RECT 1PHASE 600V 3A GBU

Vishay General Semiconductor - Diodes Division

8,319 -
GBU4JL-5303M3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4JL-5707E3/45

GBU4JL-5707E3/45

BRIDGE RECT 1PHASE 600V 3A GBU

Vishay General Semiconductor - Diodes Division

7,589 -
GBU4JL-5707E3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4JL-5707M3/45

GBU4JL-5707M3/45

BRIDGE RECT 1PHASE 600V 3A GBU

Vishay General Semiconductor - Diodes Division

2,989 -
GBU4JL-5707M3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4JL-5708E3/51

GBU4JL-5708E3/51

BRIDGE RECT 1PHASE 600V 3A GBU

Vishay General Semiconductor - Diodes Division

6,179 -
GBU4JL-5708E3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4JL-5708M3/51

GBU4JL-5708M3/51

BRIDGE RECT 1PHASE 600V 3A GBU

Vishay General Semiconductor - Diodes Division

3,929 -
GBU4JL-5708M3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4JL-6088E3/45

GBU4JL-6088E3/45

BRIDGE RECT 1PHASE 600V 3A GBU

Vishay General Semiconductor - Diodes Division

7,109 -
GBU4JL-6088E3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4JL-6088M3/45

GBU4JL-6088M3/45

BRIDGE RECT 1PHASE 600V 3A GBU

Vishay General Semiconductor - Diodes Division

5,760 -
GBU4JL-6088M3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4JL-6088M3/51

GBU4JL-6088M3/51

BRIDGE RECT 1PHASE 600V 3A GBU

Vishay General Semiconductor - Diodes Division

5,470 -
GBU4JL-6088M3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4JL-7001E3/45

GBU4JL-7001E3/45

BRIDGE RECT 1PHASE 600V 3A GBU

Vishay General Semiconductor - Diodes Division

8,073 -
GBU4JL-7001E3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4JL-7001M3/45

GBU4JL-7001M3/45

BRIDGE RECT 1PHASE 600V 3A GBU

Vishay General Semiconductor - Diodes Division

5,954 -
GBU4JL-7001M3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4JL-7002E3/45

GBU4JL-7002E3/45

BRIDGE RECT 1PHASE 600V 3A GBU

Vishay General Semiconductor - Diodes Division

3,554 -
GBU4JL-7002E3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4JL-7002M3/45

GBU4JL-7002M3/45

BRIDGE RECT 1PHASE 600V 3A GBU

Vishay General Semiconductor - Diodes Division

5,905 -
GBU4JL-7002M3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4JL-7088E3/51

GBU4JL-7088E3/51

BRIDGE RECT 1PHASE 600V 3A GBU

Vishay General Semiconductor - Diodes Division

8,867 -
GBU4JL-7088E3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4JL-7088M3/51

GBU4JL-7088M3/51

BRIDGE RECT 1PHASE 600V 3A GBU

Vishay General Semiconductor - Diodes Division

8,618 -
GBU4JL-7088M3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4K-5400M3/51

GBU4K-5400M3/51

BRIDGE RECT 1PHASE 800V 3A GBU

Vishay General Semiconductor - Diodes Division

6,488 -
GBU4K-5400M3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 800 V 3 A 1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4KL-6437E3/51

GBU4KL-6437E3/51

BRIDGE RECT 1PHASE 800V 3A GBU

Vishay General Semiconductor - Diodes Division

4,589 -
GBU4KL-6437E3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 800 V 3 A 1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4KL-6437M3/51

GBU4KL-6437M3/51

BRIDGE RECT 1PHASE 800V 3A GBU

Vishay General Semiconductor - Diodes Division

9,483 -
GBU4KL-6437M3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 800 V 3 A 1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4KL-7014M3/45

GBU4KL-7014M3/45

BRIDGE RECT 1PHASE 800V 3A GBU

Vishay General Semiconductor - Diodes Division

7,645 -
GBU4KL-7014M3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 800 V 3 A 1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4M-7001E3/51

GBU4M-7001E3/51

BRIDGE RECT 1PHASE 1KV 3A GBU

Vishay General Semiconductor - Diodes Division

7,778 -
GBU4M-7001E3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 1 kV 3 A 1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4ML-5001E3/45

GBU4ML-5001E3/45

BRIDGE RECT 1PHASE 1KV 3A GBU

Vishay General Semiconductor - Diodes Division

5,956 -
GBU4ML-5001E3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 1 kV 3 A 1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) - - Through Hole GBU
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