桥式整流器

制造商 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 二极管类型 技术 电压 - 反向峰值(最大值) 电流 - 平均整流(Io) 电压 - 正向 (Vf)(最大值)@ If 电流 - 反向漏电 @ Vr 工作温度 等级 认证 安装类型 供应商设备封装
GBL06L-6870E3/51

GBL06L-6870E3/51

BRIDGE RECT 1PHASE 600V 3A GBL

Vishay General Semiconductor - Diodes Division

8,319 -
GBL06L-6870E3/51

数据表

- 4-SIP, GBL Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBL
GBL06L-7000E3/45

GBL06L-7000E3/45

BRIDGE RECT 1PHASE 600V 3A GBL

Vishay General Semiconductor - Diodes Division

8,924 -
GBL06L-7000E3/45

数据表

- 4-SIP, GBL Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBL
GBLA06L-6985E3/45

GBLA06L-6985E3/45

BRIDGE RECT 1PHASE 600V 3A GBL

Vishay General Semiconductor - Diodes Division

9,663 -
GBLA06L-6985E3/45

数据表

- 4-SIP, GBL Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBL
GBLA06L-6985M3/45

GBLA06L-6985M3/45

BRIDGE RECT 1PHASE 600V 3A GBL

Vishay General Semiconductor - Diodes Division

3,545 -
GBLA06L-6985M3/45

数据表

- 4-SIP, GBL Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBL
GBU4A-1E3/51

GBU4A-1E3/51

BRIDGE RECT 1PHASE 50V 3A GBU

Vishay General Semiconductor - Diodes Division

2,737 -
GBU4A-1E3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 50 V 3 A 1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4A-1M3/51

GBU4A-1M3/51

BRIDGE RECT 1PHASE 50V 3A GBU

Vishay General Semiconductor - Diodes Division

9,048 -
GBU4A-1M3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 50 V 3 A 1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4DL-5303E3/45

GBU4DL-5303E3/45

BRIDGE RECT 1PHASE 200V 3A GBU

Vishay General Semiconductor - Diodes Division

3,030 -
GBU4DL-5303E3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 200 V 3 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4DL-5303E3/51

GBU4DL-5303E3/51

BRIDGE RECT 1PHASE 200V 3A GBU

Vishay General Semiconductor - Diodes Division

2,005 -
GBU4DL-5303E3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 200 V 3 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4DL-5303M3/45

GBU4DL-5303M3/45

BRIDGE RECT 1PHASE 200V 3A GBU

Vishay General Semiconductor - Diodes Division

6,938 -
GBU4DL-5303M3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 200 V 3 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4DL-5303M3/51

GBU4DL-5303M3/51

BRIDGE RECT 1PHASE 200V 3A GBU

Vishay General Semiconductor - Diodes Division

2,676 -
GBU4DL-5303M3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 200 V 3 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4DL-6419E3/45

GBU4DL-6419E3/45

BRIDGE RECT 1PHASE 200V 3A GBU

Vishay General Semiconductor - Diodes Division

6,565 -
GBU4DL-6419E3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 200 V 3 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4DL-6419E3/51

GBU4DL-6419E3/51

BRIDGE RECT 1PHASE 200V 3A GBU

Vishay General Semiconductor - Diodes Division

6,799 -
GBU4DL-6419E3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 200 V 3 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4DL-6419M3/45

GBU4DL-6419M3/45

BRIDGE RECT 1PHASE 200V 3A GBU

Vishay General Semiconductor - Diodes Division

4,302 -
GBU4DL-6419M3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 200 V 3 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4DL-6419M3/51

GBU4DL-6419M3/51

BRIDGE RECT 1PHASE 200V 3A GBU

Vishay General Semiconductor - Diodes Division

7,110 -
GBU4DL-6419M3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 200 V 3 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4GL-6420E3/51

GBU4GL-6420E3/51

BRIDGE RECT 1PHASE 400V 3A GBU

Vishay General Semiconductor - Diodes Division

4,648 -
GBU4GL-6420E3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 400 V 3 A 1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4GL-6420M3/51

GBU4GL-6420M3/51

BRIDGE RECT 1PHASE 400V 3A GBU

Vishay General Semiconductor - Diodes Division

7,909 -
GBU4GL-6420M3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 400 V 3 A 1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4J-5410M3/51

GBU4J-5410M3/51

BRIDGE RECT 1PHASE 600V 3A GBU

Vishay General Semiconductor - Diodes Division

7,599 -
GBU4J-5410M3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4JL-5300E3/51

GBU4JL-5300E3/51

BRIDGE RECT 1PHASE 600V 3A GBU

Vishay General Semiconductor - Diodes Division

4,272 -
GBU4JL-5300E3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4JL-5300M3/51

GBU4JL-5300M3/51

BRIDGE RECT 1PHASE 600V 3A GBU

Vishay General Semiconductor - Diodes Division

4,564 -
GBU4JL-5300M3/51

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
GBU4JL-5303E3/45

GBU4JL-5303E3/45

BRIDGE RECT 1PHASE 600V 3A GBU

Vishay General Semiconductor - Diodes Division

8,002 -
GBU4JL-5303E3/45

数据表

- 4-SIP, GBU Tube Obsolete Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) - - Through Hole GBU
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