场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
RF1S30N06LE

RF1S30N06LE

MOSFET N-CH 60V 30A

Harris Corporation

1,848 -

-

* - Bulk Active - - - - - - - - - - - - - - -
FDMD8900

FDMD8900

MOSFET 2N-CH 30V 19A/17A 12POWER

onsemi

5,560 -
FDMD8900

数据表

- 12-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 19A, 17A 4mOhm @ 19A, 10V 2.5V @ 250µA 35nC @ 10V 2605pF @ 15V 2.1W -55°C ~ 150°C (TJ) - - Surface Mount 12-Power3.3x5
NVDD5894NLT4G

NVDD5894NLT4G

MOSFET 2N-CH 40V 14A 5DPAK

onsemi

9,462 -
NVDD5894NLT4G

数据表

- TO-252-5, DPAK (4 Leads + Tab), TO-252AD Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Common Drain - 40V 14A 10mOhm @ 50A, 10V 2.5V @ 250µA 41nC @ 10V 2103pF @ 25V 3.8W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount DPAK-5
TT8K11TCR

TT8K11TCR

MOSFET 2N-CH 30V 3A 8TSST

Rohm Semiconductor

2,980 -
TT8K11TCR

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 4V Drive 30V 3A 71mOhm @ 3A, 10V 2.5V @ 1A 2.5nC @ 5V 140pF @ 10V 1W 150°C (TJ) - - Surface Mount 8-TSST
FDG6321C

FDG6321C

MOSFET N/P-CH 25V 0.5A SC88

onsemi

14,550 -
FDG6321C

数据表

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 25V 500mA, 410mA 450mOhm @ 500mA, 4.5V 1.5V @ 250µA 2.3nC @ 4.5V 50pF @ 10V 300mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88 (SC-70-6)
SSFQ4810

SSFQ4810

MOSFET 2N-CH 40V 8A 8SOP

Good-Ark Semiconductor

9,400 -
SSFQ4810

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 40V 8A (Ta) 18mOhm @ 8A, 10V 2.5V @ 250µA 21.6nC @ 10V 1450pF @ 25V 2W (Ta) -50°C ~ 150°C (TJ) - - Surface Mount 8-SOP
EFC6605R-TR

EFC6605R-TR

MOSFET 2N-CH 6EFCP

onsemi

8,638 -
EFC6605R-TR

数据表

- 6-SMD, No Lead Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 2.5V Drive - - - - 19.8nC @ 4.5V - 1.6W 150°C (TJ) - - Surface Mount 6-EFCP (1.9x1.46)
TT8M1TR

TT8M1TR

MOSFET N/P-CH 20V 2.5A 8TSST

Rohm Semiconductor

7,658 -
TT8M1TR

数据表

- 8-SMD, Flat Leads Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) N and P-Channel Logic Level Gate, 1.5V Drive 20V 2.5A 72mOhm @ 2.5A, 4.5V 1V @ 1mA 3.6nC @ 4.5V 260pF @ 10V 1W 150°C (TJ) - - Surface Mount 8-TSST
SI9945BDY

SI9945BDY

MOSFET 2N-CH 60V 4.3A 8SOP

UMW

3,000 -
SI9945BDY

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 60V 4.3A (Ta), 5.3A (Tc) 36mOhm @ 4.3A, 10V 3V @ 250µA 20nC @ 10V 665pF @ 15V 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
IRF7316TR

IRF7316TR

MOSFET 2P-CH 30V 4.9A 8SOP

UMW

3,000 -
IRF7316TR

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel - 30V 4.9A (Ta) 60mOhm @ 4.9A, 10V 1V @ 250µA 34nC @ 10V 710pF @ 25V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
IRF7309TR

IRF7309TR

MOSFET N/P-CH 30V 4A 8SOP

UMW

3,000 -
IRF7309TR

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V 4A (Ta), 3A (Ta) 50mOhm @ 2.4A, 10V, 100mOhm @ 1.8A, 10V 1V @ 250µA 25nC @ 4.5V 520pF @ 15V, 440pF @ 15V 1.4W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
IRF7103TR

IRF7103TR

MOSFET 2N-CH 50V 3A 8SOP

UMW

3,000 -
IRF7103TR

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 50V 3A (Ta) 30mOhm @ 3A, 10V 3V @ 250µA 30nC @ 10V 290pF @ 25V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
IRF7105TR

IRF7105TR

MOSFET N/P-CH 25V 3.5A 8SOP

UMW

3,000 -
IRF7105TR

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 25V 3.5A (Ta), 2.3A (Ta) 100mOhm @ 1A, 10V, 250mOhm @ 1A, 10V 3V @ 250µA 27nC @ 10V, 25nC @ 10V 330pF @ 15V, 290pF @ 15V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
IRF7301TR

IRF7301TR

MOSFET 2N-CH 20V 5.2A 8SOP

UMW

2,980 -
IRF7301TR

数据表

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) 2 N-Channel - 20V 5.2A (Ta) 40mOhm @ 2.6A, 4.5V 700mV @ 250µA 20nC @ 4.5V 660pF @ 15V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
IRF7307TR

IRF7307TR

MOSFET 2N-CH 20V 5.2A 8SOP

UMW

2,898 -
IRF7307TR

数据表

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) 2 N-Channel - 20V 5.2A (Ta), 4.3A (Ta) 53mOhm @ 2.6A, 4.5V, 100mOhm @ 2.2A, 4.5V 700mV @ 250µA 20nC @ 4.5V, 22nC @ 4.5V 660pF @ 15V, 610pF @ 15V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
LM2724MX/NOPB

LM2724MX/NOPB

MOSFET

National Semiconductor

2,500 -
LM2724MX/NOPB

数据表

* - Bulk Active - - - - - - - - - - - - - - -
FDMS3616S

FDMS3616S

MOSFET 2N-CH 25V 16A/18A 8PQFN

Fairchild Semiconductor

65,810 -
FDMS3616S

数据表

PowerTrench® 8-PowerTDFN Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate 25V 16A, 18A 6.6mOhm @ 16A, 10V 2.5V @ 250µA 27nC @ 10V 1765pF @ 13V 1W - - - Surface Mount 8-PQFN (5x6)
FW274-TL-E

FW274-TL-E

MOSFET 2N-CH 30V 6A 8SOP

onsemi

4,632 -
FW274-TL-E

数据表

- 8-SOIC (0.173", 4.40mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 6A 37mOhm @ 6A, 10V 2.6V @ 1mA 9.1nC @ 10V 490pF @ 10V 2.2W 150°C (TJ) - - Surface Mount 8-SOP
FW274-TL-E

FW274-TL-E

MOSFET 2N-CH 30V 6A 8SOP

Sanyo

15,000 -
FW274-TL-E

数据表

- 8-SOIC (0.173", 4.40mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 4V Drive 30V 6A (Ta) 37mOhm @ 6A, 10V 2.6V @ 1mA 9.1nC @ 10V 490pF @ 10V 2.2W (Ta) 150°C - - Surface Mount 8-SOP
IRF8915TRPBF

IRF8915TRPBF

MOSFET 2N-CH 20V 8.9A 8SO

Infineon Technologies

8,775 -
IRF8915TRPBF

数据表

HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 8.9A 18.3mOhm @ 8.9A, 10V 2.5V @ 250µA 7.4nC @ 4.5V 540pF @ 10V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
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