场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
FW256-TL-E-ON

FW256-TL-E-ON

MOSFET N-CH

onsemi

41,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
FDPC3D5N025X9D

FDPC3D5N025X9D

MOSFET 2N-CH 25V 74A 12PQFN

onsemi

2,416 -
FDPC3D5N025X9D

数据表

- 12-PowerWQFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) - 25V 74A 3.01mOhm @ 18A, 10V 3V @ 250µA 24nC @ 4.5V 3340pF @ 13V 26W -55°C ~ 150°C (TJ) - - Surface Mount 12-PQFN (3.3x3.3)
FW256-TL-E

FW256-TL-E

MOSFET N-CH

Sanyo

3,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
IRF7351TR

IRF7351TR

MOSFET 2N-CH 60V 8A 8SOP

UMW

3,000 -
IRF7351TR

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 60V 8A (Ta) 23mOhm @ 8A, 10V 2V @ 50µA 36nC @ 10V 1330pF @ 30V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
IRF7328TR

IRF7328TR

MOSFET 2P-CH 30V 8A 8SOP

UMW

2,992 -
IRF7328TR

数据表

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) 2 P-Channel - 30V 8A (Ta) 21mOhm @ 8A, 10V 2.5V @ 250µA 78nC @ 10V 2675pF @ 25V 2W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
IRF7104TR

IRF7104TR

MOSFET 2P-CH 30V 2.3A 8SOP

UMW

2,958 -
IRF7104TR

数据表

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) 2 P-Channel - 30V 2.3A (Ta) 250mOhm @ 1A, 10V 3V @ 250µA 25nC @ 10V 290pF @ 15V 2W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
FS10ASJ-3-T13#C01

FS10ASJ-3-T13#C01

MOSFET N-CH

Renesas Electronics Corporation

98,500 -
FS10ASJ-3-T13#C01

数据表

* - Bulk Active - - - - - - - - - - - - - - -
FS10ASJ-3-T13#C02

FS10ASJ-3-T13#C02

MOSFET N-CH

Renesas Electronics Corporation

53,358 -
FS10ASJ-3-T13#C02

数据表

* - Bulk Active - - - - - - - - - - - - - - -
FDS6892AZ

FDS6892AZ

MOSFET 2N-CH 20V 7.5A 8SOIC

Fairchild Semiconductor

7,470 -
FDS6892AZ

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 7.5A 18mOhm @ 7.5A, 4.5V 1.5V @ 250µA 17nC @ 4.5V 1286pF @ 10V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FS10ASJ-2-T13#B00

FS10ASJ-2-T13#B00

MOSFET N-CH

Renesas Electronics Corporation

6,000 -
FS10ASJ-2-T13#B00

数据表

* - Bulk Active - - - - - - - - - - - - - - -
SI4936DY

SI4936DY

MOSFET 2N-CH 30V 5.8A 8SOIC

Fairchild Semiconductor

5,278 -
SI4936DY

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 5.8A (Ta) 37mOhm @ 5.8A, 10V 1V @ 250µA 25nC @ 10V 460pF @ 15V 900mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
FDW2501N

FDW2501N

MOSFET 2N-CH 20V 6A 8TSSOP

Fairchild Semiconductor

321,187 -
FDW2501N

数据表

PowerTrench® 8-TSSOP (0.173", 4.40mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 6A 18mOhm @ 6A, 4.5V 1.5V @ 250µA 17nC @ 4.5V 1290pF @ 10V 600mW -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
FDMS7606

FDMS7606

MOSFET 2N-CH 30V 11.5A POWER56

Fairchild Semiconductor

2,540 -
FDMS7606

数据表

PowerTrench® 8-PowerWDFN Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 11.5A, 12A 11.4mOhm @ 11.5A, 10V 3V @ 250µA 22nC @ 10V 1400pF @ 15V 1W - - - Surface Mount Power56
IRFH4257DTRPBF

IRFH4257DTRPBF

MOSFET 2N-CH 25V 25A PQFN

International Rectifier

1,834 -
IRFH4257DTRPBF

数据表

HEXFET® 8-PowerVDFN Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 25V 25A 3.4mOhm @ 25A, 10V 2.1V @ 35µA 15nC @ 4.5V 1321pF @ 13V 25W, 28W -55°C ~ 150°C (TJ) - - Surface Mount Dual PQFN (5x4)
FDG1024NZ

FDG1024NZ

MOSFET 2N-CH 20V 1.2A SC88

onsemi

13,774 -
FDG1024NZ

数据表

PowerTrench® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 1.2A 175mOhm @ 1.2A, 4.5V 1V @ 250µA 2.6nC @ 4.5V 150pF @ 10V 300mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88 (SC-70-6)
G1008B

G1008B

MOSFET 100V 8A 8SOP

Goford Semiconductor

3,240 -
G1008B

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) - - 100V 8A (Tc) 130mOhm @ 2A, 10V 3V @ 250µA 15.5nC @ 10V 690pF @ 25V 3W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
FDMA1023PZ-F106

FDMA1023PZ-F106

MOSFET 2P-CH 20V 3.7A 6MICROFET

onsemi

7,147 -
FDMA1023PZ-F106

数据表

PowerTrench® 6-VDFN Exposed Pad Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 3.7A (Ta) 72mOhm @ 3.7A, 4.5V 1V @ 250µA 12nC @ 4.5V 655pF @ 10V 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount 6-MicroFET (2x2)
EFC4621R-TR

EFC4621R-TR

MOSFET 2N-CH EFCP1616

onsemi

10,000 -
EFC4621R-TR

数据表

- 4-XFBGA, FCBGA Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 2.5V Drive - - - - 29nC @ 4.5V - 1.6W 150°C (TJ) - - Surface Mount EFCP1616-4CE-022
SI4948BEY

SI4948BEY

MOSFET 2P-CH 60V 2.4A 8SOP

UMW

2,795 -
SI4948BEY

数据表

- 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) 2 P-Channel - 60V 2.4A (Ta) 120mOhm @ 3.1A, 10V 3V @ 250µA 22nC @ 10V - 1.4W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount 8-SOP
FDS6993

FDS6993

MOSFET 2P-CH 30V/12V 4.3A 8SOIC

Fairchild Semiconductor

10,200 -
FDS6993

数据表

PowerTrench® 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V, 12V 4.3A, 6.8A 55mOhm @ 4.3A, 10V 3V @ 250µA 7.7nC @ 5V 530pF @ 15V 900mW -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
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