场效应晶体管(FET)、MOSFET 阵列

制造商 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 技术 配置 FET 特性 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 输入电容 (Ciss)(最大值)@ Vds 功率 - 最大值 工作温度 等级 认证 安装类型 供应商设备封装
FW803-TL-E

FW803-TL-E

MOSFET N-CH

Sanyo

10,000 -

-

* - Bulk Active - - - - - - - - - - - - - - -
FDQ7238AS

FDQ7238AS

MOSFET 2N-CH 30V 14A/11A 14SOIC

Fairchild Semiconductor

5,000 -
FDQ7238AS

数据表

PowerTrench® 14-SOIC (0.154", 3.90mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 14A, 11A 13.2mOhm @ 11A, 10V 3V @ 250µA 24nC @ 10V 920pF @ 15V 1.3W, 1.1W -55°C ~ 150°C (TJ) - - Surface Mount 14-SOIC
HAT2218R-EL-E

HAT2218R-EL-E

MOSFET 2N-CH 30V 7.5A/8A 8SOP

Renesas Electronics Corporation

3,981 -
HAT2218R-EL-E

数据表

- 8-SOIC (0.154", 3.90mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate, 4.5V Drive 30V 7.5A, 8A 24mOhm @ 3.75A, 10V - 4.6nC @ 4.5V 630pF @ 10V 1.5W 150°C (TJ) - - Surface Mount 8-SOP
FDG8850NZ

FDG8850NZ

MOSFET 2N-CH 30V 0.75A SC88

onsemi

3,362 -
FDG8850NZ

数据表

PowerTrench® 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 750mA 400mOhm @ 750mA, 4.5V 1.5V @ 250µA 1.44nC @ 4.5V 120pF @ 10V 300mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88 (SC-70-6)
FDG6304P

FDG6304P

MOSFET 2P-CH 25V 0.41A SC88

onsemi

1,703 -
FDG6304P

数据表

- 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Last Time Buy MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 25V 410mA 1.1Ohm @ 410mA, 4.5V 1.5V @ 250µA 1.5nC @ 4.5V 62pF @ 10V 300mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88 (SC-70-6)
GSFN0207

GSFN0207

MOSFET 2P-CH 20V 7.5A 8PPAK

Good-Ark Semiconductor

5,900 -
GSFN0207

数据表

- 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel - 20V 7.5A (Tc) 33mOhm @ 4A, 4.5V 1V @ 250µA 25nC @ 4.5V 2100pF @ 15V 25W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PPAK (3.15x3.1)
NDC7002N

NDC7002N

MOSFET 50V 0.51A SOT23-6

UMW

4,692 -
NDC7002N

数据表

UMW SOT-23-6 Tape & Reel (TR) Active - - - 50V 510mA (Ta) 2Ohm @ 510mA, 10V 2.5V @ 250µA 1nC @ 10V 20pF @ 25V 700mW (Ta) -55°C ~ 150°C (TJ) - - Surface Mount SOT-23-6
BSO604NS2XUMA1

BSO604NS2XUMA1

MOSFET 2N-CH 55V 5A 8DSO

Infineon Technologies

3,980 -
BSO604NS2XUMA1

数据表

OptiMOS™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 55V 5A 35mOhm @ 2.5A, 10V 2V @ 30µA 26nC @ 10V 870pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-8
RFD20N03SM9AR4770

RFD20N03SM9AR4770

MOSFET N-CH 30V 20A

Fairchild Semiconductor

1,578 -

-

* - Bulk Active - - - - - - - - - - - - - - -
DMC3021LK4-13

DMC3021LK4-13

MOSFET N/P-CH 30V 9.4A TO252-4L

Diodes Incorporated

7,103 -
DMC3021LK4-13

数据表

- TO-252-5, DPAK (4 Leads + Tab), TO-252AD Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) N and P-Channel, Common Drain Logic Level Gate 30V 9.4A, 6.8A 21mOhm @ 7A, 10V 2.1V @ 250µA 17.4nC @ 10V 751pF @ 10V 2.7W -55°C ~ 150°C (TJ) - - Surface Mount TO-252-4L
FDMS9600S

FDMS9600S

MOSFET 2N-CH 30V 12A/16A 8MLP

onsemi

7,576 -
FDMS9600S

数据表

PowerTrench® 8-PowerWDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 12A, 16A 8.5mOhm @ 12A, 10V 3V @ 250µA 13nC @ 4.5V 1705pF @ 15V 1W -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP (5x6), Power56
DMC1030UFDBQ-7

DMC1030UFDBQ-7

MOSFET N/P-CH 12V 5.1A 6UDFN

Diodes Incorporated

6,870 -
DMC1030UFDBQ-7

数据表

- 6-UDFN Exposed Pad Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) N and P-Channel Complementary - 12V 5.1A 34mOhm @ 4.6A, 4.5V 1V @ 250µA 23.1nC @ 10V 1003pF @ 6V 1.36W -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount U-DFN2020-6 (Type B)
FDMS3600AS

FDMS3600AS

MOSFET 2N-CH 25V 15A/30A POWER56

onsemi

7,940 -
FDMS3600AS

数据表

PowerTrench® 8-PowerTDFN Tape & Reel (TR) Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical Logic Level Gate 25V 15A, 30A 5.6mOhm @ 15A, 10V 2.7V @ 250µA 27nC @ 10V 1770pF @ 13V 2.2W, 2.5W -55°C ~ 150°C (TJ) - - Surface Mount Power56
PJQ2800_R1_00001

PJQ2800_R1_00001

MOSFET 2N-CH 20V 5.2A 6DFN

Panjit International Inc.

3,000 -
PJQ2800_R1_00001

数据表

- 6-VDFN Exposed Pad Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 5.2A (Ta) 32mOhm @ 5.2A, 4.5V 900mV @ 250µA 6.3nC @ 4.5V 515pF @ 10V 1.45W (Ta) -55°C ~ 150°C (TJ) - - Surface Mount DFN2020-6L
UPA2756GR-E1-AT

UPA2756GR-E1-AT

MOSFET 2N-CH 60V 4A 8PSOP

Renesas Electronics Corporation

2,228 -
UPA2756GR-E1-AT

数据表

- 8-SOIC (0.173", 4.40mm Width) Bulk Obsolete MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 4A 105mOhm @ 2A, 10V 2.5V @ 1mA 6nC @ 10V 260pF @ 10V 2W 150°C (TJ) - - Surface Mount 8-PSOP
FW356-TL-E

FW356-TL-E

MOSFET N/P-CH 60V 5A 8SOP

onsemi

2,000 -
FW356-TL-E

数据表

- 8-SOIC (0.173", 4.40mm Width) Bulk Active MOSFET (Metal Oxide) N and P-Channel - 60V 5A (Ta), 3.5A (Ta) 145mOhm @ 2A, 10V 2.6V @ 1mA 22nC @ 10V 990pF @ 20V 2.3W (Ta) 150°C - - Surface Mount 8-SOP
MCQ07NP03A-TP

MCQ07NP03A-TP

MOSFET N/P-CH 30V 7A 8SOP

Micro Commercial Co

1,598 -
MCQ07NP03A-TP

数据表

- 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 30V 7A 18mOhm @ 6A, 10V, 23mOhm @ 6A, 10V 2.2V @ 250µA, 2.5V @ 250µA 12.22nC @ 10V, 28.5nC @ 10V 526pF @ 15V, 1497pF @ 15V 1.9W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
IRF640ACP001

IRF640ACP001

MOSFET N-CH 200V

Fairchild Semiconductor

1,250 -

-

* - Bulk Active - - - - - - - - - - - - - - -
IRF6802SDTRPBF

IRF6802SDTRPBF

MOSFET 2N-CH 25V 16A DIRECTFET

International Rectifier

5,145 -
IRF6802SDTRPBF

数据表

DirectFET™ DirectFET™ Isometric SA Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 25V 16A (Ta), 57A (Tc) 4.2mOhm @ 16A, 10V 2.1V @ 35µA 13nC @ 4.5V 1350pF @ 13V 1.7W (Ta), 21W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount DirectFET™ Isometric SA
G05N06S2

G05N06S2

MOSFET 2N-CH 60V 5A 8SOP

Goford Semiconductor

3,693 -
G05N06S2

数据表

TrenchFET® 8-SOIC (0.154", 3.90mm Width) Cut Tape (CT) Active MOSFET (Metal Oxide) 2 N-Channel - 60V 5A (Tc) 35mOhm @ 5A, 4.5V 2.5V @ 250µA 22nC @ 10V 1374pF @ 30V 3.1W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-SOP
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