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    首页 > 产品  > 分立半导体产品 > 晶体管 > 场效应晶体管（FETs）、金属氧化物半导体场效应晶体管（MOSFETs） > 场效应晶体管（FETs）、MOSFETs

    场效应晶体管（FETs）、MOSFETs

    制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压（最大导通电阻，最小导通电阻） 导通电阻 (Rds On)（最大值）@ Id, Vgs 栅极阈值电压 (Vgs(th)）（最大值）@ Id 栅极电荷 (Qg)（最大值）@ Vgs 栅极电压 (Vgs)（最大值） 输入电容 (Ciss)（最大值）@ Vds FET 特性 功耗（最大值） 工作温度 等级 认证 安装类型 供应商设备封装

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    图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压（最大导通电阻，最小导通电阻） 导通电阻 (Rds On)（最大值）@ Id, Vgs 栅极阈值电压 (Vgs(th)）（最大值）@ Id 栅极电荷 (Qg)（最大值）@ Vgs 栅极电压 (Vgs)（最大值） 输入电容 (Ciss)（最大值）@ Vds FET 特性 功耗（最大值） 工作温度 等级 认证 安装类型 供应商设备封装
    NVMFS5C420NT1G

    NVMFS5C420NT1G

    POWER MOSFET, N-CHANNEL, SO8FL,

    onsemi

    		 1,500 -
    请求报价
    		NVMFS5C420NT1G

    数据表

         		- 8-PowerTDFN, 5 Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 43A (Ta), 268A (Tc) 10V 1.1mOhm @ 50A, 10V 4V @ 200µA 82 nC @ 10 V ±20V 5340 pF @ 20 V - 3.8W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 5-DFN (5x6) (8-SOFL)
    AUIRFR4615TRL

    AUIRFR4615TRL

    MOSFET N-CH 150V 33A DPAK

    Infineon Technologies

    		 3,000 -
    请求报价
    		AUIRFR4615TRL

    数据表

         		HEXFET® TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Not For New Designs N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 42mOhm @ 21A, 10V 5V @ 100µA 26 nC @ 10 V ±20V 1750 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-252AA (DPAK)
    R6022YNX3C16

    R6022YNX3C16

    NCH 600V 22A, TO-220AB, POWER MO

    Rohm Semiconductor

    		 995 -
    请求报价
    		R6022YNX3C16

    数据表

         		- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 22A (Tc) 10V, 12V 165mOhm @ 6.5A, 12V 6V @ 1.8mA 33 nC @ 10 V ±30V 1400 pF @ 100 V - 205W (Tc) 150°C (TJ) - - Through Hole TO-220AB
    XP60SL115DR

    XP60SL115DR

    MOSFET N-CH 600V 28A TO262

    YAGEO XSEMI

    		 990 -
    请求报价
    		XP60SL115DR

    数据表

         		XP60SL115D TO-262-3 Long Leads, I2PAK, TO-262AA Tube Active N-Channel MOSFET (Metal Oxide) 600 V 28A (Tc) 10V 115mOhm @ 9.6A, 10V 5V @ 250µA 145 nC @ 10 V ±20V 5120 pF @ 100 V - 2W (Ta), 178W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-262
    IPB80N06S2H5ATMA2

    IPB80N06S2H5ATMA2

    MOSFET N-CH 55V 80A TO263-3

    Infineon Technologies

    		 875 -
    请求报价
    		IPB80N06S2H5ATMA2

    数据表

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 5.2mOhm @ 80A, 10V 4V @ 230µA 155 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
    IPB80N04S204ATMA2

    IPB80N04S204ATMA2

    MOSFET N-CH 40V 80A TO263-3

    Infineon Technologies

    		 6,388 -
    请求报价
    		IPB80N04S204ATMA2

    数据表

         		OptiMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.4mOhm @ 80A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 5300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
    IQD016N08NM5CGATMA1

    IQD016N08NM5CGATMA1

    OPTIMOS 6 POWER-TRANSISTOR

    Infineon Technologies

    		 4,824 -
    请求报价
    		IQD016N08NM5CGATMA1

    数据表

         		OptiMOS™ 5 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 31A (Ta), 323A (Tc) 6V, 10V 1.57mOhm @ 50A, 10V 3.8V @ 159µA 133 nC @ 10 V ±20V 9200 pF @ 40 V - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TTFN-9-U02
    STB9NK60ZT4

    STB9NK60ZT4

    MOSFET N-CH 600V 7A D2PAK

    STMicroelectronics

    		 845 -
    请求报价
    		STB9NK60ZT4

    数据表

         		SuperMESH™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 7A (Tc) 10V 950mOhm @ 3.5A, 10V 4.5V @ 100µA 53 nC @ 10 V ±30V 1110 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount D2PAK
    STW25N60M2-EP

    STW25N60M2-EP

    MOSFET N-CHANNEL 600V 18A TO247

    STMicroelectronics

    		 560 -
    请求报价
    		STW25N60M2-EP

    数据表

         		MDmesh™ M2-EP TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 188mOhm @ 9A, 10V 4.75V @ 250µA 29 nC @ 10 V ±25V 1090 pF @ 100 V - 150W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
    IQD020N10NM5CGATMA1

    IQD020N10NM5CGATMA1

    OPTIMOS 6 POWER-TRANSISTOR

    Infineon Technologies

    		 4,942 -
    请求报价
    		IQD020N10NM5CGATMA1

    数据表

         		OptiMOS™ 5 9-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 26A (Ta), 273A (Tc) 6V, 10V 2.05mOhm @ 50A, 10V 3.8V @ 159µA 134 nC @ 10 V ±20V 9500 pF @ 50 V - 3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TTFN-9-U02
    XP8NA2R2CXT

    XP8NA2R2CXT

    MOSFET N-CH 80V 35A 168A PMPAK

    YAGEO XSEMI

    		 1,000 -
    请求报价
    		XP8NA2R2CXT

    数据表

         		XP8NA2R2C 8-PowerLDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 35A (Ta), 168A (Tc) 6V, 10V 2.2mOhm @ 20A, 10V 4V @ 250µA 179 nC @ 10 V ±20V 9328 pF @ 60 V - 5W (Ta), 113.6W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PMPAK® 5 x 6
    TP65H300G4LSGB-TR

    TP65H300G4LSGB-TR

    GANFET N-CH 650V 6.5A QFN8X8

    Transphorm

    		 2,893 -
    请求报价
    		TP65H300G4LSGB-TR

    数据表

         		SuperGaN® 8-VDFN Exposed Pad Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 6.5A (Tc) 6V 312mOhm @ 6.5A, 6V 2.8V @ 500µA 8.8 nC @ 10 V ±12V 730 pF @ 400 V - 21W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (8x8)
    IPB180P04P403ATMA2

    IPB180P04P403ATMA2

    MOSFET P-CH 40V 180A TO263-7

    Infineon Technologies

    		 1,741 -
    请求报价
    		IPB180P04P403ATMA2

    数据表

         		OptiMOS™ P2 TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active P-Channel MOSFET (Metal Oxide) 40 V 180A (Tc) - 2.8mOhm @ 100A, 10V 4V @ 410µA 250 nC @ 10 V ±20V 17640 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7-3
    IPB60R145CFD7ATMA1

    IPB60R145CFD7ATMA1

    MOSFET N-CH 600V 16A TO263-3-2

    Infineon Technologies

    		 994 -
    请求报价
    		IPB60R145CFD7ATMA1

    数据表

         		CoolMOS™ CFD7 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 145mOhm @ 6.8A, 10V 4.5V @ 340µA 31 nC @ 10 V ±20V 1330 pF @ 400 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3-2
    IPB339N20NM6ATMA1

    IPB339N20NM6ATMA1

    MOSFET

    Infineon Technologies

    		 850 -
    请求报价
    		IPB339N20NM6ATMA1

    数据表

         		OptiMOS™ 6 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 200 V 6.8A (Ta), 39A (Tc) 10V, 15V 31.8mOhm @ 26A, 15V 4.5V @ 52µA 24 nC @ 10 V ±20V 1600 pF @ 100 V - 3.8W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-TO263-3-2
    MCACL220N06YHE3-TP

    MCACL220N06YHE3-TP

    MOSFET N-CH 60 220A DFN5060-C

    Micro Commercial Co

    		 9,800 -
    请求报价
    		MCACL220N06YHE3-TP

    数据表

         		- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 220A (Tc) 4.5V, 10V 1.6mOhm @ 20A, 10V 2.5V @ 250µA 119 nC @ 10 V ±20V 7500 pF @ 30 V - 147W (Tj) -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount DFN5060-C
    AONS66612T

    AONS66612T

    60V N-CHANNEL ALPHASGT

    Alpha & Omega Semiconductor Inc.

    		 5,937 -
    请求报价
    		AONS66612T

    数据表

         		AlphaSGT™ 8-PowerSMD, Flat Leads Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 48A (Ta), 100A (Tc) 6V, 10V 1.65mOhm @ 20A, 10V 3.5V @ 250µA 110 nC @ 10 V ±20V 5300 pF @ 30 V - 7.5W (Ta), 250W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-DFN (5x6)
    STL19N60M6

    STL19N60M6

    MOSFET N-CH 600V 11A PWRFLAT HV

    STMicroelectronics

    		 3,000 -
    请求报价
    		STL19N60M6

    数据表

         		MDmesh™ M6 8-PowerVDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 308mOhm @ 6.5A, 10V 4.75V @ 250µA 16.8 nC @ 10 V ±25V 650 pF @ 100 V - 90W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerFlat™ (8x8) HV
    STD80N450K6

    STD80N450K6

    N-CHANNEL 800 V, 380 MOHM TYP.,

    STMicroelectronics

    		 2,460 -
    请求报价
    		STD80N450K6

    数据表

         		MDmesh™ K5 TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 800 V 10A (Tc) 10V 450mOhm @ 5A, 10V 4V @ 100µA 17.3 nC @ 10 V ±30V 700 pF @ 400 V - 83W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252 (DPAK)
    PSMN2R6-100SSFJ

    PSMN2R6-100SSFJ

    NEXTPOWER 80/100V MOSFETS

    Nexperia USA Inc.

    		 2,000 -
    请求报价
    		PSMN2R6-100SSFJ

    数据表

         		- SOT-1235 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 200A (Ta) 7V, 10V 2.6mOhm @ 25A, 10V 4V @ 1mA 191 nC @ 10 V ±20V 12838 pF @ 50 V - 341W (Ta) -55°C ~ 175°C (TJ) - - Surface Mount LFPAK88 (SOT1235)
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