场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

全部重置
全部应用
结果
图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
SIHB17N80E-GE3

SIHB17N80E-GE3

MOSFET N-CH 800V 15A D2PAK

Vishay Siliconix

888 -
SIHB17N80E-GE3

数据表

E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 800 V 15A (Tc) 10V 290mOhm @ 8.5A, 10V 4V @ 250µA 122 nC @ 10 V ±30V 2408 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
MSJP11N80A-BP

MSJP11N80A-BP

N-CHANNEL MOSFET, TO-220AB(H)

Micro Commercial Co

4,992 -

-

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 11A (Tc) 10V 470mOhm @ 7.1A, 10V 4.5V @ 250µA 24 nC @ 10 V ±20V 918 pF @ 400 V - 250W (Tj) -55°C ~ 150°C (TJ) - - Through Hole TO-220AB (H)
SIHB11N80E-GE3

SIHB11N80E-GE3

MOSFET N-CH 800V 12A D2PAK

Vishay Siliconix

4,800 -
SIHB11N80E-GE3

数据表

E TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tube Active N-Channel MOSFET (Metal Oxide) 800 V 12A (Tc) 10V 440mOhm @ 5.5A, 10V 4V @ 250µA 88 nC @ 10 V ±30V 1670 pF @ 100 V - 179W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
MSJW20N65A-BP

MSJW20N65A-BP

MOSFET N-CH TO247

Micro Commercial Co

5,395 -
MSJW20N65A-BP

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 180mOhm @ 10A, 10V 5V @ 250µA 54 nC @ 10 V ±30V 1740 pF @ 100 V - 250W (Tj) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
AONA66916

AONA66916

LINEAR IC

Alpha & Omega Semiconductor Inc.

4,700 -

-

AlphaSGT™ 8-PowerWDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 30A (Ta), 197A (Tc) 6V, 10V 3.4mOhm @ 20A, 10V 3.6V @ 250µA 95 nC @ 10 V ±20V 5300 pF @ 50 V - 7.5W (Ta), 300W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-DFN (5x6)
IPB65R145CFD7AATMA1

IPB65R145CFD7AATMA1

AUTOMOTIVE_COOLMOS PG-TO263-3

Infineon Technologies

860 -
IPB65R145CFD7AATMA1

数据表

CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 17A (Tc) 10V 145mOhm @ 8.5A, 10V 4.5V @ 420µA 36 nC @ 10 V ±20V 1694 pF @ 400 V - 98W (Tc) -40°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3
IPP020N08N5AKSA1

IPP020N08N5AKSA1

MOSFET N-CH 80V 120A TO220-3

Infineon Technologies

562 -
IPP020N08N5AKSA1

数据表

OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 80 V 120A (Tc) 6V, 10V 2mOhm @ 100A, 10V 3.8V @ 280µA 223 nC @ 10 V ±20V 16900 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3
RX3P07BBHC16

RX3P07BBHC16

NCH 100V 70A, TO-220AB, POWER MO

Rohm Semiconductor

968 -
RX3P07BBHC16

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 100 V 70A (Tc) 6V, 10V 8.4mOhm @ 70A, 10V 4V @ 1mA 38 nC @ 10 V ±20V 2410 pF @ 50 V - 89W (Tc) 150°C (TJ) - - Through Hole TO-220AB
IPP100N06S2L05AKSA2

IPP100N06S2L05AKSA2

MOSFET N-CH 55V 100A TO220-3

Infineon Technologies

456 -
IPP100N06S2L05AKSA2

数据表

OptiMOS™ TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 55 V 100A (Tc) 4.5V, 10V 4.7mOhm @ 80A, 10V 2V @ 250µA 230 nC @ 10 V ±20V 5660 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) - - Through Hole PG-TO220-3-1
AUIRFS8407-7TRL

AUIRFS8407-7TRL

MOSFET N-CH 40V 240A D2PAK

Infineon Technologies

791 -
AUIRFS8407-7TRL

数据表

HEXFET® TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.3mOhm @ 100A, 10V 3.9V @ 150µA 225 nC @ 10 V ±20V 7437 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount D2PAK (7-Lead)
NVB125N65S3

NVB125N65S3

SF3 650V EASY 125MOHM D2PAK AUTO

onsemi

648 -
NVB125N65S3

数据表

SuperFET® III TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 125mOhm @ 12A, 10V 4.5V @ 590µA 46 nC @ 10 V ±30V 1940 pF @ 400 V - 181W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-263 (D2PAK)
FDMS86150A

FDMS86150A

FET 100V 4.85 MOHM PQFN56

onsemi

2,950 -
FDMS86150A

数据表

PowerTrench® 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 16A (Ta), 60A (Tc) 6V, 10V 4.85mOhm @ 16A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 4665 pF @ 50 V - 2.7W (Ta), 113W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount Power56
TSM60NE145CIT C0G

TSM60NE145CIT C0G

MOSFET

Taiwan Semiconductor Corporation

2,000 -

-

- TO-220-3 Full Pack Tube Active N-Channel MOSFET (Metal Oxide) 600 V 14.5A (Tc) 10V, 12V 135mOhm @ 4.8A, 12V 6V @ 2mA 40 nC @ 10 V ±30V 1661 pF @ 300 V - 69W (Tc) -55°C ~ 150°C (TJ) - - Through Hole ITO-220TL
IAUMN08S5N012GAUMA1

IAUMN08S5N012GAUMA1

MOSFET_(75V 120V(

Infineon Technologies

1,901 -
IAUMN08S5N012GAUMA1

数据表

OptiMOS™ 5 4-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 300A (Tj) 6V, 10V 1.2mOhm @ 100A, 10V 3.8V @ 232µA 194 nC @ 10 V ±20V 13550 pF @ 40 V - 325W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-HSOG-4-1
IPB50R140CPATMA1

IPB50R140CPATMA1

MOSFET N-CH 550V 23A TO263-3

Infineon Technologies

1,000 -
IPB50R140CPATMA1

数据表

CoolMOS™ TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 550 V 23A (Tc) 10V 140mOhm @ 14A, 10V 3.5V @ 930µA 64 nC @ 10 V ±20V 2540 pF @ 100 V - 192W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-TO263-3-2
NVMJST2D6N08HTXG

NVMJST2D6N08HTXG

TRENCH 8 80V LFPAK 5X7

onsemi

5,950 -
NVMJST2D6N08HTXG

数据表

- 10-PowerLSOP (0.209", 5.30mm Width) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 28A (Ta), 131.5A (Tc) 10V 2.8mOhm @ 50A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 4405 pF @ 40 V - 5.3W (Ta), 116W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 10-TCPAK
IPB240N04S4R9ATMA1

IPB240N04S4R9ATMA1

MOSFET N-CH 40V 240A TO263-7

Infineon Technologies

943 -
IPB240N04S4R9ATMA1

数据表

OptiMOS™ TO-263-7, D2PAK (6 Leads + Tab) Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 0.87mOhm @ 100A, 10V 4V @ 230µA 290 nC @ 10 V ±20V 23000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7-3
STW8NK80Z

STW8NK80Z

MOSFET N-CH 800V 6.2A TO247-3

STMicroelectronics

618 -
STW8NK80Z

数据表

SuperMESH™ TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 800 V 6.2A (Tc) 10V 1.5Ohm @ 3.1A, 10V 4.5V @ 100µA 46 nC @ 10 V ±30V 1320 pF @ 25 V - 140W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
MCW240N10Y-BP

MCW240N10Y-BP

POWER MOSFET

Micro Commercial Co

293 -
MCW240N10Y-BP

数据表

- TO-247-3 Bulk Active N-Channel MOSFET (Metal Oxide) 100 V 240A (Tc) 10V 1.85mOhm @ 50A, 10V 4V @ 250µA 256 nC @ 10 V ±20V 16232 pF @ 50 V - 312.5W (Tj) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
MCTL295N06Y-TP

MCTL295N06Y-TP

N-CHANNEL MOSFET, TOLL-8L

Micro Commercial Co

3,895 -
MCTL295N06Y-TP

数据表

- 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 60 V 295A (Tc) 6V, 10V 2mOhm @ 20A, 10V 4V @ 250µA 108 nC @ 10 V ±20V 8350 pF @ 30 V - 313W (Tj) -55°C ~ 150°C (TJ) - - Surface Mount TOLL-8L
深圳市宝利科技有限公司

搜索

深圳市宝利科技有限公司

产品

深圳市宝利科技有限公司

电话

深圳市宝利科技有限公司

用户