场效应晶体管(FETs)、MOSFETs

制造商 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装

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图片 厂商型号 可用性 价格 数量 数据表 系列 封装/外壳 包装 产品状态 FET 类型 技术 漏极到源极电压 (Vdss) 电流 - 连续漏极 (Id) @ 25°C 驱动电压(最大导通电阻,最小导通电阻) 导通电阻 (Rds On)(最大值)@ Id, Vgs 栅极阈值电压 (Vgs(th))(最大值)@ Id 栅极电荷 (Qg)(最大值)@ Vgs 栅极电压 (Vgs)(最大值) 输入电容 (Ciss)(最大值)@ Vds FET 特性 功耗(最大值) 工作温度 等级 认证 安装类型 供应商设备封装
STW18NM60N

STW18NM60N

MOSFET N-CH 600V 13A TO247-3

STMicroelectronics

534 -
STW18NM60N

数据表

MDmesh™ II TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 285mOhm @ 6.5A, 10V 4V @ 250µA 35 nC @ 10 V ±25V 1000 pF @ 50 V - 110W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
GS-065-011-6-LR-MR

GS-065-011-6-LR-MR

GS-065-011-6-LR-MR

Infineon Technologies Canada Inc.

235 -

-

- 8-VDFN Exposed Pad Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 700 V 12.2A (Tc) 6V 180mOhm @ 3.2A, 6V 2.6V @ 2.4mA 2.2 nC @ 6 V +7V, -10V 70 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (8x8)
GS-065-011-6-L-MR

GS-065-011-6-L-MR

GS-065-011-6-L-MR

Infineon Technologies Canada Inc.

227 -

-

- 8-PowerVDFN Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 700 V 12.2A (Tc) 6V 180mOhm @ 3.2A, 6V 2.6V @ 2.4mA 2.2 nC @ 6 V +7V, -10V 70 pF @ 400 V - - -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (5x6)
SIJH5100E-T1-GE3

SIJH5100E-T1-GE3

N-CHANNEL 100 V (D-S) 175C MOSFE

Vishay Siliconix

1,942 -
SIJH5100E-T1-GE3

数据表

TrenchFET® PowerPAK® 8 x 8 Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Ta), 277A (Tc) 7.5V, 10V 1.89mOhm @ 20A, 10V 4V @ 250µA 128 nC @ 10 V ±20V 6900 pF @ 50 V - 3.3W (Ta), 333W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PowerPAK® 8 x 8
IMTA65R060M2HXTMA1

IMTA65R060M2HXTMA1

SILICON CARBIDE MOSFET

Infineon Technologies

367 -
IMTA65R060M2HXTMA1

数据表

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
IMT40R036M2HXTMA1

IMT40R036M2HXTMA1

SIC-MOS

Infineon Technologies

2,000 -
IMT40R036M2HXTMA1

数据表

CoolSiC™ 8-PowerSFN Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 400 V 7.6A (Ta), 50A (Tc) 15V, 18V 45.7mOhm @ 11.1A, 18V 5.6V @ 4mA 26 nC @ 18 V +23V, -7V 1170 pF @ 200 V - 3.8W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount PG-HSOF-8-2
FDH210N08

FDH210N08

MOSFET N-CH 75V TO247-3

onsemi

560 -
FDH210N08

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 75 V 210A (Tc) 10V - - - ±20V - - 462W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-3
AIMBG75R090M1HXTMA1

AIMBG75R090M1HXTMA1

AIMBG75R090M1HXTMA1

Infineon Technologies

980 -

-

CoolSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 750 V 24A (Tj) 15V, 20V 83mOhm @ 7.4A, 20V 5.6V @ 2.6mA 15 nC @ 18 V +23V, -5V 542 pF @ 500 V - 128W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TO263-7
NTMTS0D4N04CTXG

NTMTS0D4N04CTXG

MOSFET N-CH 40V 79.8A/558A 8DFNW

onsemi

2,889 -
NTMTS0D4N04CTXG

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 40 V 79.8A (Ta), 558A (Tc) 10V 0.45mOhm @ 50A, 10V 4V @ 250µA 251 nC @ 10 V ±20V 16500 pF @ 20 V - 5W (Ta), 244W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount 8-DFNW (8.3x8.4)
NTMTSC4D2N10GTXG

NTMTSC4D2N10GTXG

100V MVSOA IN DFNW8(PQFN8X8) PAC

onsemi

2,670 -
NTMTSC4D2N10GTXG

数据表

- 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 100 V 21A (Ta), 178A (Tc) 10V 4.2mOhm @ 88A, 10V 4V @ 450µA 159 nC @ 10 V ±20V 10450 pF @ 50 V - 3.9W (Ta), 267W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount, Wettable Flank 8-TDFNW (8.3x8.4)
R6024ENZ4C13

R6024ENZ4C13

MOSFET N-CH 600V 24A TO247

Rohm Semiconductor

594 -
R6024ENZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V, 15V 165mOhm @ 24A, 15V - 70 nC @ 15 V ±20V - - 245W (Tc) - - - Through Hole TO-247
SIHH125N60EF-T1GE3

SIHH125N60EF-T1GE3

MOSFET N-CH 600V 23A PPAK 8 X 8

Vishay Siliconix

3,000 -
SIHH125N60EF-T1GE3

数据表

EF 8-PowerTDFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 600 V 23A (Tc) 10V 125mOhm @ 12A, 10V 5V @ 250µA 47 nC @ 10 V ±30V 1533 pF @ 100 V - 156W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PowerPAK® 8 x 8
AOTL66810

AOTL66810

DESC: MOSFET N-CH 80V 65A TOLLA

Alpha & Omega Semiconductor Inc.

1,790 -
AOTL66810

数据表

AlphaSGT™ 8-PowerSFN Tape & Reel (TR) Active N-Channel MOSFET (Metal Oxide) 80 V 65A (Ta), 420A (Tc) 8V, 10V 1.25mOhm @ 20A, 10V 3.6V @ 250µA 245 nC @ 10 V ±20V 13000 pF @ 40 V - 10W (Ta), 425W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TOLLA
RX3L18BBGC16

RX3L18BBGC16

NCH 60V 180A, TO-220AB, POWER MO

Rohm Semiconductor

954 -
RX3L18BBGC16

数据表

- TO-220-3 Tube Active N-Channel MOSFET (Metal Oxide) 60 V 180A (Tc) 4.5V, 10V 1.84mOhm @ 90A, 10V 2.5V @ 1mA 160 nC @ 10 V ±20V 11000 pF @ 30 V - 192W (Tc) 150°C (TJ) - - Through Hole TO-220AB
FCH190N65F-F155

FCH190N65F-F155

MOSFET N-CH 650V 20.6A TO247

onsemi

387 -
FCH190N65F-F155

数据表

FRFET®, SuperFET® II TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 650 V 20.6A (Tc) 10V 190mOhm @ 10A, 10V 5V @ 2mA 78 nC @ 10 V ±20V 3225 pF @ 100 V - 208W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247-3
MSC090SMA070SCT/R

MSC090SMA070SCT/R

MOSFET SIC 700 V 90 MOHM PSMT

Microchip Technology

1,300 -

-

- - Tape & Reel (TR) Active - - - - - - - - - - - - - - - - -
MSC090SMA070SDT/R

MSC090SMA070SDT/R

MOSFET SIC 700 V 90 MOHM TO-263-

Microchip Technology

800 -
MSC090SMA070SDT/R

数据表

mSiC™ TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Tape & Reel (TR) Active N-Channel SiCFET (Silicon Carbide) 700 V 34A (Tc) 18V, 20V 112mOhm @ 15A, 20V 5V @ 750µA 41 nC @ 20 V +23V, -10V 806 pF @ 700 V - 156W (Tc) -55°C ~ 175°C (TJ) - - Surface Mount TO-263-7
TSM60NE084PW C0G

TSM60NE084PW C0G

600V, 42A, SINGLE N-CHANNEL HIGH

Taiwan Semiconductor Corporation

300 -
TSM60NE084PW C0G

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 42A (Tc) 10V, 12V 80mOhm @ 14A, 12V 6V @ 2.9mA 68 nC @ 10 V ±30V 2939 pF @ 300 V - 357W (Tc) -55°C ~ 150°C (TJ) - - Through Hole TO-247
TP65H100G4LSGB-TR

TP65H100G4LSGB-TR

Hi Volt FETs

Transphorm

2,960 -

-

SuperGaN® 8-VDFN Exposed Pad Tape & Reel (TR) Active N-Channel GaNFET (Gallium Nitride) 650 V 18.9A (Tc) 10V 110mOhm @ 12A, 10V 4.1V @ 1.8mA 14.4 nC @ 10 V ±20V 818 pF @ 400 V - 65.8W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PQFN (8x8)
R6027YNZ4C13

R6027YNZ4C13

NCH 600V 27A, TO-247G, POWER MOS

Rohm Semiconductor

597 -
R6027YNZ4C13

数据表

- TO-247-3 Tube Active N-Channel MOSFET (Metal Oxide) 600 V 27A (Tc) 10V, 12V 135mOhm @ 7A, 12V 6V @ 2mA 40 nC @ 10 V ±30V 1670 pF @ 100 V - 245W (Tc) 150°C (TJ) - - Through Hole TO-247G
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